JPS5840425B2 - サイリスタセイギヨソウチ - Google Patents
サイリスタセイギヨソウチInfo
- Publication number
- JPS5840425B2 JPS5840425B2 JP50031630A JP3163075A JPS5840425B2 JP S5840425 B2 JPS5840425 B2 JP S5840425B2 JP 50031630 A JP50031630 A JP 50031630A JP 3163075 A JP3163075 A JP 3163075A JP S5840425 B2 JPS5840425 B2 JP S5840425B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- thyristor
- layer
- light
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000010355 oscillation Effects 0.000 claims description 26
- 230000001934 delay Effects 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 26
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Control Of Voltage And Current In General (AREA)
- Power Conversion In General (AREA)
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50031630A JPS5840425B2 (ja) | 1975-03-15 | 1975-03-15 | サイリスタセイギヨソウチ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50031630A JPS5840425B2 (ja) | 1975-03-15 | 1975-03-15 | サイリスタセイギヨソウチ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51107057A JPS51107057A (enExample) | 1976-09-22 |
| JPS5840425B2 true JPS5840425B2 (ja) | 1983-09-06 |
Family
ID=12336520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50031630A Expired JPS5840425B2 (ja) | 1975-03-15 | 1975-03-15 | サイリスタセイギヨソウチ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5840425B2 (enExample) |
-
1975
- 1975-03-15 JP JP50031630A patent/JPS5840425B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51107057A (enExample) | 1976-09-22 |
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