JPS5839574B2 - コウジユンドハンドウタイザイリヨウ ノ セイゾウホウホウ - Google Patents
コウジユンドハンドウタイザイリヨウ ノ セイゾウホウホウInfo
- Publication number
- JPS5839574B2 JPS5839574B2 JP49035079A JP3507974A JPS5839574B2 JP S5839574 B2 JPS5839574 B2 JP S5839574B2 JP 49035079 A JP49035079 A JP 49035079A JP 3507974 A JP3507974 A JP 3507974A JP S5839574 B2 JPS5839574 B2 JP S5839574B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- source
- current source
- carrier
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000004753 textile Substances 0.000 title 1
- 238000010438 heat treatment Methods 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013642 negative control Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/12—Regulating voltage or current wherein the variable actually regulated by the final control device is AC
- G05F1/40—Regulating voltage or current wherein the variable actually regulated by the final control device is AC using discharge tubes or semiconductor devices as final control devices
- G05F1/44—Regulating voltage or current wherein the variable actually regulated by the final control device is AC using discharge tubes or semiconductor devices as final control devices semiconductor devices only
- G05F1/45—Regulating voltage or current wherein the variable actually regulated by the final control device is AC using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load
- G05F1/455—Regulating voltage or current wherein the variable actually regulated by the final control device is AC using discharge tubes or semiconductor devices as final control devices semiconductor devices only being controlled rectifiers in series with the load with phase control
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2315469A DE2315469C3 (de) | 1973-03-28 | 1973-03-28 | Verfahren und Vorrichtung zum Herstellen von hochreinem Halbleitermaterial |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS501977A JPS501977A (enExample) | 1975-01-10 |
| JPS5839574B2 true JPS5839574B2 (ja) | 1983-08-31 |
Family
ID=5876210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49035079A Expired JPS5839574B2 (ja) | 1973-03-28 | 1974-03-28 | コウジユンドハンドウタイザイリヨウ ノ セイゾウホウホウ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3941900A (enExample) |
| JP (1) | JPS5839574B2 (enExample) |
| BE (1) | BE806098A (enExample) |
| IT (1) | IT1004414B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS635274A (ja) * | 1986-06-25 | 1988-01-11 | マニア・エレクトロニツク・アウトマテイザチオン・エントビツクルンク・ウント・ゲレ−テバウ・ゲ−エムベ−ハ− | プリント基板を検査するための方法と装置 |
| JPS6348164U (enExample) * | 1986-09-16 | 1988-04-01 |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320756A (en) * | 1976-08-09 | 1978-02-25 | Matsushita Electric Ind Co Ltd | Oscillator device |
| DE2753567C3 (de) * | 1977-12-01 | 1982-04-15 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinen Halbleitermaterialien und Reinstmetallen |
| DE2928456C2 (de) * | 1979-07-13 | 1983-07-07 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von hochreinem Silicium |
| JPS60248006A (ja) * | 1984-05-24 | 1985-12-07 | Nec Corp | 発振器 |
| JPH0691367B2 (ja) * | 1985-03-08 | 1994-11-14 | 株式会社東芝 | 電圧制御形発振器 |
| JPS62224181A (ja) * | 1986-03-26 | 1987-10-02 | Toshiba Corp | 副搬送波処理回路 |
| JPH0729874B2 (ja) * | 1989-11-04 | 1995-04-05 | コマツ電子金属株式会社 | 多結晶シリコン製造装置の芯線間接続用ブリッジ |
| KR100768147B1 (ko) * | 2006-05-11 | 2007-10-18 | 한국화학연구원 | 혼합된 코어수단을 이용한 다결정 실리콘 봉의 제조방법과그 제조장치 |
| KR100768148B1 (ko) * | 2006-05-22 | 2007-10-17 | 한국화학연구원 | 금속 코어수단을 이용한 다결정 실리콘 봉의 제조방법 |
| US20110159214A1 (en) * | 2008-03-26 | 2011-06-30 | Gt Solar, Incorporated | Gold-coated polysilicon reactor system and method |
| TWI494458B (zh) * | 2008-03-26 | 2015-08-01 | Gtat Corp | 在化學氣相沉積反應器中用於配氣之系統和方法 |
| JP5481886B2 (ja) * | 2008-03-27 | 2014-04-23 | 三菱マテリアル株式会社 | 多結晶シリコン製造装置 |
| DE102008002184A1 (de) * | 2008-06-03 | 2009-12-10 | Wacker Chemie Ag | Vorrichtung zur Umformung elektrischer Energie zur konduktiven Erhitzung von Halbleitermaterial in Stabform |
| ES2331283B1 (es) * | 2008-06-25 | 2010-10-05 | Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) | Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas. |
| DE212009000165U1 (de) * | 2008-12-09 | 2012-02-10 | Aeg Power Solutions Gmbh | Vorrichtung zur Stromversorgung eines CVD-Prozesses bei der Siliziumabscheidung |
| DE202009003325U1 (de) * | 2009-03-11 | 2009-06-18 | Aeg Power Solutions Gmbh | Vorrichtung zum Zünden und zur Inbetriebnahme von Siliziumstäben |
| DE102010020740A1 (de) * | 2010-05-17 | 2011-11-17 | Centrotherm Sitec Gmbh | Vorrichtung und Verfahren zum Anlegen einer Spannung an eine Vielzahl von Siliziumstäben in einem CVD-Reaktor |
| DE102011077970A1 (de) * | 2011-06-22 | 2012-12-27 | Wacker Chemie Ag | Vorrichtung und Verfahren zur Temperaturbehandlung von korrosiven Gasen |
| KR101311739B1 (ko) * | 2013-01-14 | 2013-10-14 | 주식회사 아이제이피에스 | 폴리실리콘 제조장치 |
| EP2765698B1 (de) * | 2013-02-06 | 2018-10-24 | Siemens Aktiengesellschaft | Anordnung zum Zünden von Dünnstäben aus elektrisch leitfähigem Material, insbesondere von Siliziumdünnstäben |
| JP6036946B2 (ja) * | 2015-08-26 | 2016-11-30 | 住友電気工業株式会社 | 炭化珪素単結晶の製造方法および製造装置 |
| PL3648553T3 (pl) * | 2017-06-27 | 2021-09-13 | Canon Anelva Corporation | Urządzenie do obróbki plazmowej |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL130620C (enExample) * | 1954-05-18 | 1900-01-01 | ||
| DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
| BE578542A (enExample) * | 1958-05-16 | |||
| NL256255A (enExample) * | 1959-11-02 | |||
| DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| US3686475A (en) * | 1971-03-04 | 1972-08-22 | Gen Motors Corp | Control circuit for a liquid vaporizing tool |
-
1973
- 1973-10-15 BE BE136708A patent/BE806098A/xx unknown
-
1974
- 1974-02-20 US US05/443,950 patent/US3941900A/en not_active Expired - Lifetime
- 1974-03-26 IT IT49666/74A patent/IT1004414B/it active
- 1974-03-28 JP JP49035079A patent/JPS5839574B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS635274A (ja) * | 1986-06-25 | 1988-01-11 | マニア・エレクトロニツク・アウトマテイザチオン・エントビツクルンク・ウント・ゲレ−テバウ・ゲ−エムベ−ハ− | プリント基板を検査するための方法と装置 |
| JPS6348164U (enExample) * | 1986-09-16 | 1988-04-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| BE806098A (fr) | 1974-02-01 |
| IT1004414B (it) | 1976-07-10 |
| JPS501977A (enExample) | 1975-01-10 |
| US3941900A (en) | 1976-03-02 |
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