JPS5838923A - Manufacture of liquid crystal display substrate - Google Patents
Manufacture of liquid crystal display substrateInfo
- Publication number
- JPS5838923A JPS5838923A JP56137415A JP13741581A JPS5838923A JP S5838923 A JPS5838923 A JP S5838923A JP 56137415 A JP56137415 A JP 56137415A JP 13741581 A JP13741581 A JP 13741581A JP S5838923 A JPS5838923 A JP S5838923A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- liquid crystal
- crystal display
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000010408 film Substances 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 239000000428 dust Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000001259 photo etching Methods 0.000 abstract 2
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 5
- -1 nitride metals Chemical class 0.000 description 4
- 238000007743 anodising Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 241001122767 Theaceae Species 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
Abstract
Description
【発明の詳細な説明】
零発−は非線型抵抗素子を具備した液晶表示基板の製造
方法−関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a liquid crystal display substrate provided with a non-linear resistance element.
近年、Ｔｙｌ形液晶表示素子の応用が進み腕時計電卓等
を代表として種々の分野で用いられて込る。In recent years, the application of Tyl type liquid crystal display elements has progressed and they are being used in various fields, typified by wristwatch calculators and the like.
しかしながら、！夏形液晶表示素子は電圧−コントラス
ト特性の立上りがあ重り急峻でなく視角依存性も大％ｖ
＝ために多桁のマルチプレックス駆動をすることが困難
であｐその限界は１／３０デユ一テイ程度と考えられて
論る。however,! The summer type liquid crystal display element has a voltage-contrast characteristic that has a heavy rise, is not steep, and has a large viewing angle dependence.
Therefore, it is difficult to perform multi-digit multiplex driving, and the limit is considered to be about 1/30 duty for discussion.
そこでＴＩ形液晶表示素子の褒示容量を増すためにスイ
ッチング素子や非線型素子を用にたアクティブマトリッ
クヌ表示が考えられ、アそルフ了スシリコンやポリシリ
コンを用いたダイオードある＾は２７丁、酸化亜鉛等を
用いたバリスタなど種々のアプローチがなされている・
その中でＢａｒａｆｆｅＤ、Ｒ，ａｔ ａｎ ｅ（１９
８０８Ｘ ＤＸ＠ｔａｒ ｖｈａｔｉｏｎｔｘｌ Ｈ
ｙｍｐｅｍｈｍ Ｄ９ａａｔ ｏｆ τ−〇ルｓｈａ
ｇＰ（ｌｐａｒａｅマａｔ ｘ Ｘ、？−２００ｓムｐ
ｒイｌ １９８０その他）の窒化メンタルを用論た非線
型抵抗素子は製造工程の簡単なこと、素子設計が容易で
あるとｂうた利点を有してい石、この素子の基本構成は
第１図および第２図に示す工うにガラス基板１を？（’
ＩＯｍ膜２で被覆し、窒素をト°−プしたテロ膜３をス
パッタでつＨた優所定の形状にパターニングし表面を陽
極酸化で酸化膜４とする。さらｆｌｃ ）Ｉ（ＣｒｌＡ
ｍ薄膜を蒸着しバターニングして対向電極５とする。Therefore, in order to increase the display capacity of TI type liquid crystal display elements, an active matrix display using switching elements and non-linear elements was considered, and there are 27 diodes using alfonsilicon or polysilicon. Various approaches have been taken, such as varistors using zinc oxide, etc. Among them, Baraffe D, R, at an e (19
808X DX@tar vhationtxl H
ympemhm D9aat of τ-〇rusha
gP(lparae maat x X,?-200sp
The non-linear resistance element using nitride metals (Reilly et al., 1980 and others) has the advantages of a simple manufacturing process and easy element design.The basic configuration of this element is shown in Figure 1. And what about the glass substrate 1 shown in Figure 2? ('
A nitrogen-topped terror film 3 coated with an IOm film 2 is patterned into a predetermined shape by sputtering, and the surface is anodized to form an oxide film 4. Sara flc )I(CrlA
m thin film is deposited and patterned to form the counter electrode 5.
この対向電極５に重なる＊ＷＣＷイーＣデ／ムｔの透明
電極６をつ社友もので、この素子の０両端（Ｔａ膜３と
対向電極５）Ｋ電圧をかＨると８３図の工うに電流が流
れてその電圧−電流が’Ｘ’ｏｏ１ｍ −Ｘｒ−％Ｍａ
ｌ効果に従い
ｚｍｉｃ ｖａｚｐ ＣＩＪＶ ） ・・・’ｌ’〔
ホ１１式中Ｉは電流、Ｖは印加電圧を示す、〕という弐
に従う。This is a company friend product with a transparent electrode 6 of *WCW E-C De/Mt overlapping this counter electrode 5. When a voltage of K is applied to both ends of this element (Ta film 3 and counter electrode 5), the result shown in Fig. 83 is obtained. A current flows and the voltage-current is 'X'oo1m -Xr-%Ma
According to l effect zmic vazp CIJV) ...'l' [
In Equation 11, I indicates current and V indicates applied voltage.
この素子（便宜上Ｍｅｔａｌ−Ｉｓｓｓｊａｔｏｒ−Ｍ
ｅｔａｌ略してＭｘＭ素子と呼ぶ）と液晶表示素子を組
合せ、ダイナζツタ駆動すると第４図に示す１５に液晶
表示素子単体の電圧−コントラスト断線ムが高電圧間Ｂ
にシフトし見か打上急峻ｌが上昇する。This element (Metal-Issjator-M for convenience)
When a liquid crystal display element is combined with a liquid crystal display element (abbreviated as an MxM element) and driven in a dynamo zeta pattern, the voltage-contrast disconnection of the liquid crystal display element itself is shown at 15 in Fig. 4 between high voltages B.
Shift to , and the steepness of the launch rises.
即ち多桁駆動が可能になりＢ６ｒ６ｆｆらＫよれば、１
／１００〜１／２００デユーテイが容易に達成できると
している。That is, multi-digit driving becomes possible, and according to B6r6ff et al.
It is said that a duty of /100 to 1/200 can be easily achieved.
ところで先に説明したようにＭＩＭ素子の製造工程中１
（Ｔａ膜を陽極酸化す不工程を含むが、陽極酸化は、ク
エン酸等の水溶液中に基板を入れて被酸化側をプラス電
極にして、白金等の電極をマイナス電極にして行う。プ
ラス電極側に水酸イオｙが電気的に引寄せられて結合し
て水となる際に発生する酸素がプラス電極側の金属と反
応してこれを酸化する。したがってプラスに帯電しない
金属は酸化されな論０ＭｘＭ素子を液晶表示装置に付加
した液晶表示基板は第５図のように各表示セルを配線で
接続しこれをアドレス線ｌＯとして用いるため各アドレ
ス線のり一部 ｉｓ １１を短絡すゐ治具を用−てプラ
ス電極として陽極酸化する。しかしながらアドレス線１
０はその途中で断線していることが多く、断線箇所以後
は陽極酸化されないで線欠陥となる。またリード部を短
絡するために導電性のゴムを用ηて接触不良による陽極
酸化不良を無くしているが、導電性のゴムは基［Ｋ付着
して、酸や有機溶剤等の洗浄では完全にタｉ−工ｙグ出
来ず後工程におηてその目ゴレの九め金属膜のハガレを
生ずる。また−線の原因としては、金属膜の形成時に発
生するゴミ、ケバ等やピンホール。By the way, as explained earlier, during the manufacturing process of MIM elements,
(Although it includes the non-step of anodizing the Ta film, anodizing is performed by placing the substrate in an aqueous solution such as citric acid and using the side to be oxidized as a positive electrode and using an electrode such as platinum as a negative electrode.Positive electrode When hydroxyl ions y are electrically attracted to the side and combine to form water, the oxygen generated reacts with the metal on the positive electrode side and oxidizes it.Therefore, metals that are not positively charged are not oxidized. In the liquid crystal display substrate in which the 0MxM element is added to the liquid crystal display device, each display cell is connected by wiring as shown in Fig. 5, and this is used as the address line IO, so a jig is used to short-circuit a part of each address line. However, address wire 1 is anodized as a positive electrode.
0 is often broken in the middle, and after the broken point is not anodized and becomes a line defect. In addition, conductive rubber is used to short-circuit the leads to eliminate defects in anodic oxidation due to poor contact. The tie process cannot be performed and the metal film peels off in the subsequent process. In addition, the causes of negative lines include dust, fluff, etc., and pinholes generated during the formation of the metal film.
マタフォトエッチング時に発生するゴミ、ケバ等やマス
ク上の欠陥さらにはレジストのピンホールやレジストの
ハガレ等の種々の原因が有り、これを完全に除去するこ
とは―シ論。There are various causes such as dust, fluff, etc. generated during mataphoto etching, defects on the mask, resist pinholes, resist peeling, etc., and it is impossible to completely remove them.
本発明の目的はかかる欠点を除去し、液晶表示基板の歩
留り誉向上させることにある。An object of the present invention is to eliminate such drawbacks and improve the yield of liquid crystal display substrates.
本発明は、透明導電薄膜を基板全面に形成し、その上層
に所定の形状の金属薄膜を形成して仁れを陽極酸化する
ことに工１上記目的を這成せんとしたものである。The present invention aims to achieve the above object by forming a transparent conductive thin film on the entire surface of a substrate, forming a metal thin film of a predetermined shape on top of the transparent conductive thin film, and anodizing the grooves.
以下実施例に従って説明する。第６図（ａｌ〜ｔｇ＞は
断面図、纂１図−１〜（ｇｌは平面図である。A description will be given below according to examples. FIG. 6 (al to tg> is a cross-sectional view, and Figure 1-1 to (gl) is a plan view.
透明基板２０（ソーダガラス、パイレックスガラス、石
英ガラス等の＾わゆるガラス基板）上に透明導電薄膜で
あるＸ町’ｓ ｊ１２１ （ＢｎＯ，等の通常透明電極
として使用されて％Ａ為ものであればよ％／−ｈ）をス
パッタ蒸着に１り形成したのちこれを４００℃で熱処理
する。熱処理−置は透明基板や透明導電膜の種類により
異なるが、およそ１００℃〜６００℃が適当である０次
Ｋ ”％ｓＯｓ ［１２１上にチー膜ｎを形成してこれ
をフォトエツチング法ＫｘすＦｌｒ定の形状にパターニ
ングする。Ｔａ膜のエツチングは、ＣＦａ４Ｌ＜は０３
を混入し九ＣＦ４ガスで可能で’Ｉ”Ｄ、”ガｏｓはこ
れらのガスにエツチングされない。なお本実施例におい
てτＧを使用したが、ＭＵＭ素子に用論られる金属であ
ればＬ〈テａＫ限るものではな一、テαバターｙニング
後、クエン酸等の水溶ｆ［Ｋてテ・の陽極酸化を行う。On a transparent substrate 20 (a so-called glass substrate such as soda glass, pyrex glass, quartz glass, etc.), a transparent conductive thin film of X-cho's j121 (BnO, etc.), which is usually used as a transparent electrode, is coated. %/-h) is formed by sputter deposition and then heat-treated at 400°C. The heat treatment temperature varies depending on the type of transparent substrate and transparent conductive film, but a suitable temperature is approximately 100°C to 600°C. Patterning is carried out in the shape of Flr.The etching of the Ta film is performed by CFa4L<03
It is possible with nine CF4 gases mixed with 'I'D,' gases will not be etched by these gases. Although τG was used in this example, if it is a metal used in MUM elements, it is not limited to L. Perform anodization.
前記丁・パターンとの接続は、Ｘ％ｌｏｇとＴａとが電
気的に短絡状態となっているため少なくともＩ％ｌ’ｌ
の一部もしくはテロの一部と電源が接続されていればよ
いため金属（例えばクリップのようなもの）で外部電源
と接続が出来る。また、前記原因に１）テａのパターン
不良が有っても各テロパターンは基板全面に形成され九
ｘＩＢ１０ｓｌ［により外部電極と導通がとれている。The connection with the D pattern is at least I%l'l because X%log and Ta are electrically short-circuited.
It is only necessary to connect a power source to a part of the robot or a part of the terrorist, so it can be connected to an external power source using metal (such as a clip). Further, even if the cause is 1) pattern failure of tea, each terror pattern is formed on the entire surface of the substrate and is electrically connected to the external electrode by 9×IB10sl[.
陽極酸化電圧は２０Ｖで約４００ムの駿化膜厚と々る。The anodic oxidation voltage is 20V and the thickness of the anodic film is approximately 400 μm.
コー・陽極酸化膜、陽極酸化後、ツオシエッチングによ
すＩ％寥ｏｓ膜を所定の形状にパターンエングする。こ
のときτａ４と透甲電極（工％ｇｏｓ）２１が接続され
ているようにパターンニンダする。After the anodic oxidation, the I%-OS film is patterned into a predetermined shape by etching. At this time, the pattern is kneaded so that τa4 and the transparent electrode (work%gos) 21 are connected.
さらに〒ａ膜を形成してこれを所定の形状にバターν二
ングする。なおＭＩＭ素子に使用される金属であればＴ
ａＫ限るものではなＬ’％ｅこのとき配線５とＭＵＭ素
子電極為は同時に形成される。Further, a film is formed and then buttered into a predetermined shape. In addition, if it is a metal used for MIM elements, T
aK is not limited to L'%e. At this time, the wiring 5 and the MUM element electrode are formed at the same time.
以後液晶の配向処理として通常行われている方法、すな
わちラビングやａ（Ｏ等Ｏ無機物質の斜方蒸着ある偽は
ポリイミド、有機シラン化合物やテフロン等の有機化合
物質を被着して配向膜としラビング処理して液晶パネル
基板となす。After that, we used the methods commonly used for alignment treatment of liquid crystals, such as rubbing, oblique evaporation of inorganic substances such as a(O), and coating of organic compounds such as polyimide, organic silane compounds, and Teflon to form an alignment film. Rub it and make it into a liquid crystal panel substrate.
以上本発明に１れば、陽極酸化時に尭生じ欠陥の要因と
なる導電性のゴムの付着物が付くこともｎ＜、ｔたフォ
トエツチング工程や金１１１膜形成時忙発生するゴミ、
ケバ、ピンホール等の欠陥−因に影響されることなく陽
極酸化が出来る工うＫなり容易にその歩留りを向上する
ことが可能となった。As described above, according to the present invention, conductive rubber deposits that form during anodic oxidation and cause defects can be avoided.
Since anodic oxidation can be carried out without being affected by defects such as fluff and pinholes, it has become possible to easily improve the yield.
第１図及び第２図はＢａｒｔｘｆｆ、ＤｍＲらの輩工Ｍ
素子の構成を示す。
第３図はＭｘ輩素子の電圧−電流特性を示す。
第４図はＭＸＭ素子を用％Ａ表い場合と用いた場合の電
圧−コントラスト特性の差を示す。
第５図は液晶衰示基板の配線を示す。
第６図−１〜ｔｇ１は本発明の１！施例の各工程の断面
図である。
第７■ｌａｌ〜ｔｇ＞は本発明の実施例の各工程の平面
図である。
以 上
−
０１図
第２１ｘ１
ｔ；１３図
第４図
（＄１
第６図
＜５Ｉ そ
（）フ
第７図Figures 1 and 2 are from Bartxff, DmR et al.
The structure of the element is shown. FIG. 3 shows the voltage-current characteristics of the Mx element. FIG. 4 shows the difference in voltage-contrast characteristics when the MXM element is used in %A format and when it is used. FIG. 5 shows the wiring of the liquid crystal display board. Figure 6-1 to tg1 are 1 of the present invention! It is a sectional view of each process of an example. 7th <1al~tg> is a plan view of each step of the embodiment of the present invention. Above - Figure 01 Figure 21x1 t; Figure 13 Figure 4 ($1 Figure 6<5I So()F Figure 7
Claims (1)
製造方法において、透明基板上に透明導電薄膜を形成し
、前記導電薄膜上にさらに嬉−の金属簿膜を形成して所
定の形状にエツチングしてバターニングしたのち、前記
第一〇金属薄膜を陽極酸化して前記第一の金属薄膜表面
に絶縁膜を形成してのち前記透明導電薄膜をエツチング
してパターンエラグすゐ工程を含むことを特徴とする液
晶表示基板の製造方法。 伐）透明基板がソーダガラス、バイレツタスガラス、石
英ガラスとＶｈ−）た＾わゆるガラスであることを特徴
とする特許請求の範囲第１項記載の液晶表示基板の製造
方法。 （３）透明導電薄膜がＸガ０．あるいは８１％０．であ
ることを特徴とする特許請求の範囲第１項記載の液晶表
示基板の製造方法。[Claims] (11) In a method for manufacturing a liquid crystal display substrate having a metal-insulator-metal structure, a transparent conductive thin film is formed on a transparent substrate, and a transparent conductive thin film is further formed on the conductive thin film. After etching into a predetermined shape and buttering, the 10th metal thin film is anodized to form an insulating film on the surface of the first metal thin film, and the transparent conductive thin film is etched to eliminate pattern errors. A method for manufacturing a liquid crystal display substrate, characterized in that it includes a swiss step. A patent claim characterized in that the transparent substrate is made of soda glass, biretus glass, quartz glass, and Vh-) glass. A method for manufacturing a liquid crystal display substrate according to item 1. (3) The transparent conductive thin film is Or 81%0. A method for manufacturing a liquid crystal display substrate according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137415A JPS5838923A (en) | 1981-09-01 | 1981-09-01 | Manufacture of liquid crystal display substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56137415A JPS5838923A (en) | 1981-09-01 | 1981-09-01 | Manufacture of liquid crystal display substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5838923A true JPS5838923A (en) | 1983-03-07 |
Family
ID=15198095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56137415A Pending JPS5838923A (en) | 1981-09-01 | 1981-09-01 | Manufacture of liquid crystal display substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5838923A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5274482A (en) * | 1990-11-21 | 1993-12-28 | Kabushiki Kaisha Toshiba | Matrix array using MIM device and α and β tantalum electrodes |
-
1981
- 1981-09-01 JP JP56137415A patent/JPS5838923A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5274482A (en) * | 1990-11-21 | 1993-12-28 | Kabushiki Kaisha Toshiba | Matrix array using MIM device and α and β tantalum electrodes |
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