JPH0466919A - Production of liquid crystal display device - Google Patents
Production of liquid crystal display deviceInfo
- Publication number
- JPH0466919A JPH0466919A JP2177100A JP17710090A JPH0466919A JP H0466919 A JPH0466919 A JP H0466919A JP 2177100 A JP2177100 A JP 2177100A JP 17710090 A JP17710090 A JP 17710090A JP H0466919 A JPH0466919 A JP H0466919A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- film
- crystal display
- display device
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000206 photolithography Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 238000009713 electroplating Methods 0.000 claims abstract description 4
- 239000011159 matrix material Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 6
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 238000007747 plating Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 239000005388 borosilicate glass Substances 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000005530 etching Methods 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、液晶表示装置の製造方法に関し、詳しくはス
イッチング用非線形抵抗素子を用いたアクティブマトリ
ックス型液晶表示装置の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a liquid crystal display device, and more particularly to a method of manufacturing an active matrix type liquid crystal display device using a nonlinear resistance element for switching.
アクティブマトリックス型液晶表示装置におけるスイッ
チング用非線形抵抗2端子素子であるMIMは、それぞ
れの電極にはさまれた絶縁層重が高電界で電流を流す性
質を利用している。非線形な電流−電圧特性のメカニズ
ムは5hottkyやP4O10−Freukel
機構等によって説明されているが、そのメカニイムは不
明な点も多い。MIM, which is a nonlinear resistance two-terminal element for switching in active matrix liquid crystal display devices, utilizes the property of insulating layers sandwiched between electrodes that allow current to flow under a high electric field. The mechanism of nonlinear current-voltage characteristics is 5hottky and P4O10-Freukel.
Although it has been explained by mechanisms, there are many points about the mechanism that are unclear.
これらの素子の製造は下記の通りに形成される。まずガ
ラス基板上にエツチングストッパー用として、−船釣に
はTaの酸化物が形成される。これは、必要に応じて形
成されるものであるが、特にTaのエツチングガスでお
かされ難い透明な酸化物、あるいは窒化物が選ばれる。The manufacture of these elements is formed as follows. First, Ta oxide is formed on a glass substrate as an etching stopper. This material may be formed as required, but a transparent oxide or nitride that is not easily disturbed by Ta etching gas is particularly selected.
次に下部電極として、Taが周知のスパッタリングで形
成し、フォトリン・エツチングで所定の寸法に形成する
Taのエツチングは、−船釣には、OF。Next, as a lower electrode, Ta is formed by well-known sputtering and etched to a predetermined size by photorin etching.
CF4+Oz等のエツチングガスを用いたドライエツチ
ング法が用いられる。しかる後に、Taを陽極酸化して
、Taの酸化膜を絶縁層として作成する。陽極酸化は一
般的には1%クエン酸溶液を用いる。この’ra酸化膜
は、熱酸化あるいはO。A dry etching method using an etching gas such as CF4+Oz is used. Thereafter, Ta is anodized to form a Ta oxide film as an insulating layer. Anodic oxidation generally uses a 1% citric acid solution. This 'ra oxide film is formed by thermal oxidation or O.
ガスによるプラズマ酸化でも得ることが出来る。It can also be obtained by plasma oxidation using gas.
次いで上部電極としてその上にCrをスパッタリングで
形成する。Crも所定の寸法にフォトリソ・エツチング
を用い形成される。さらに画素電極が形成される。画素
電極は、工To(インジーラム・スズオキサイド)をパ
ターニングして作られる。これらの素子基板を用い液晶
パネルに組み立てられる。Next, Cr is formed thereon as an upper electrode by sputtering. Cr is also formed using photolithography and etching to predetermined dimensions. Furthermore, a pixel electrode is formed. The pixel electrode is made by patterning Injiram tin oxide. A liquid crystal panel is assembled using these element substrates.
しかし、前述の従来技術では以下の様な問題点を有する
。However, the above-mentioned conventional technology has the following problems.
下部電極は、抵抗の問題から厚みが約60001であり
、陽極酸化層も含めて約5200Xの厚みになっている
。また、Taのエツチングされた端面ば、急しぬんな形
状になりており、上部電極であるCrは、スパッタリン
グで形成しても充分なステップカバレッジを得ることが
難しく、シばしば、Crの断線が生じてしまうという問
題を有していた。The thickness of the lower electrode is about 60001× due to resistance issues, and the thickness including the anodic oxide layer is about 5200×. In addition, the etched end face of Ta has an abrupt shape, and it is difficult to obtain sufficient step coverage even if the Cr upper electrode is formed by sputtering. There was a problem in that wire breakage occurred.
複数の行電極と対向基板上、にこれに交差して配置され
た複数の列電極を備え、これら両電極の交差部に、マト
リックス状に形成された画素部にスイッチング用非線形
抵抗素子と液晶を電気的に直列に接続して配置したアク
ティブマトリックス型液晶表示装置において、前記スイ
ッチング素子がTaの下部電極であり、絶縁膜がTaの
酸化膜あるいは酸窒化膜であり、上部電極としてcrで
構成されたMIM構造(メタル・インシュレーター・メ
タル)を有しており、上部電極のCrが所定の寸法にフ
ォトリソグラフィを用いてエツチングされた後、さらに
Crを電気メッキして作成した〔実施例〕
フーニング社製7059Baホウケイ酸ガラスを80℃
の熱硫酸で洗浄した。この基板を用いスパッタリング装
置で、ガラス保護膜としてTa膜を500X形成した。A plurality of row electrodes and a plurality of column electrodes are arranged on a counter substrate, and a plurality of column electrodes are arranged to intersect with each other. At the intersection of these two electrodes, a nonlinear resistance element for switching and a liquid crystal are arranged in a pixel part formed in a matrix. In an active matrix liquid crystal display device arranged electrically connected in series, the switching element is a Ta lower electrode, the insulating film is a Ta oxide film or an oxynitride film, and the upper electrode is made of Cr. It has an MIM structure (metal insulator metal), and the upper electrode was created by etching Cr to a predetermined size using photolithography and then electroplating Cr [Example] Hooning Co., Ltd. Made of 7059Ba borosilicate glass at 80℃
was washed with hot sulfuric acid. Using this substrate, a 500X Ta film was formed as a glass protective film using a sputtering device.
しかる後に、酸化雰囲気中で450℃の熱酸化を行い、
Ta205を形成した。これはスイッチング素子の特性
には直接彰響するものではな(、ガラスの保護として作
成したものであり、その必要が少なげれば、必ずしも形
成する必要はない。After that, thermal oxidation was performed at 450°C in an oxidizing atmosphere,
Ta205 was formed. This does not directly affect the characteristics of the switching element (it was created to protect the glass, and if the need for it is small, it does not necessarily need to be formed).
次に、下部電極用としてTa膜をスパッタリングで約5
000′に形成した。Taを所定の寸法にフォトリソグ
ラフィ・エツチング技術を使いバターニングした。エツ
チングは、(!?、60%+0240%ガスを用いドラ
イエツチング法にて行なつた。Next, a Ta film for the lower electrode was sputtered for about 5
000'. The Ta was patterned into predetermined dimensions using photolithography and etching techniques. Etching was carried out by a dry etching method using (!?, 60%+0240% gas).
次に1%クエン酸を用い陽極酸化法にて酸化膜を形成し
た。酸化膜の厚みは約5ooXである。Next, an oxide film was formed by anodic oxidation using 1% citric acid. The thickness of the oxide film is about 5ooX.
次にCrをスパッタリングした。厚みは150oXとし
た。周知のフォトリソグラフィを用い、6?[iニセリ
ウムアンモニウム溶液で湿式エツチングした。Next, Cr was sputtered. The thickness was 150oX. Using well-known photolithography, 6? [i Wet etching with Nicerium ammonium solution.
この時、Crの断線は153600パターン中約12ケ
生じていた。これは、ガラス基板10枚の平均Cr断線
数である。各々のar断線数は表1に示す。At this time, about 12 Cr wire breaks occurred out of 153,600 patterns. This is the average number of Cr disconnections for 10 glass substrates. The number of ar disconnections for each is shown in Table 1.
表I Crの断線数(Crエツチング上り)パネル
のCr断線は8ケ以下まで許容されているため、パネル
の歩留りとしては70%である。Table I Number of Cr wire breaks (Cr etching) Since 8 or less Cr wire breaks are allowed in a panel, the yield of the panel is 70%.
次にフォトレジストを剥M後、下部電極のTaを陰極と
して用い、サージェント浴にてCrメッキを実施した。Next, after stripping off the photoresist, Cr plating was performed in a Sargent bath using Ta as the lower electrode as a cathode.
サージェント浴組成は無水クロム酸2009/l、硫酸
21/lである。液温55℃に保った浴に電流密度50
A/djとしメッキを実施した。電極は鉛板とした。メ
ッキ時間は10分間とした。The Sargent bath composition was 2009/l of chromic anhydride and 21/l of sulfuric acid. A current density of 50°C was applied to a bath kept at a liquid temperature of 55°C.
Plating was carried out using A/dj. The electrode was a lead plate. The plating time was 10 minutes.
しかる後にCrの断線を調査した。その結果を表2に示
す。After that, the Cr wire breakage was investigated. The results are shown in Table 2.
表2 Crの断線数(Crの電解メッキ後)なってい
た。Table 2 Number of Cr disconnections (after Cr electrolytic plating).
以上述べた通り、本発明によれば、Crの断線が激減し
たことが分る。したがって、Crの断線による素子の欠
陥がな(なることから、パネルに組み立てた時の画素欠
陥をなくすことが出来、パネルの歩留りを向上すること
が出来た。As described above, it can be seen that according to the present invention, the number of Cr disconnections has been drastically reduced. Therefore, there is no element defect due to Cr disconnection, so pixel defects when assembled into a panel can be eliminated, and the yield of the panel can be improved.
以上
表2からも明らかな様にCarの平均断線数は07ケと
激減した。また、パネルの歩留りは100%となった。As is clear from Table 2 above, the average number of disconnections in Car was drastically reduced to 07. Furthermore, the yield of the panels was 100%.
Crの析出状況を見ると、Crの断線部からメッキが成
長しており、その密着性は強固なものと出願人 セイコ
ーエプソン株式会社Looking at the state of Cr precipitation, the plating has grown from the Cr disconnection, and the adhesion is strong.Applicant: Seiko Epson Corporation
Claims (1)
複数の列電極を備え、これら両電極の交差部に、マトリ
ックス状に形成された画素部にスイッチング用非線形抵
抗素子と液晶を電気的に直列に接続して配置したアクテ
ィブマトリックス型液晶表示装置において、前記スイッ
チング素子がTaの下部電極であり、絶縁膜がTaの酸
化膜あるいは酸窒化膜であり、上部電極としてCrで構
成されたMIM構造(メタル・インシュレータ・メタル
)を有しており、上部電極のCrが所定の寸法にフォト
リソグラフィを用いてエッチングされた後、さらにCr
を電解メッキして作成したことを特徴とする液晶表示装
置の製造方法。It is equipped with a plurality of row electrodes and a plurality of column electrodes arranged on a counter substrate to intersect therewith, and at the intersection of these two electrodes, a nonlinear resistance element for switching and a liquid crystal are electrically connected to a pixel part formed in a matrix. In the active matrix liquid crystal display device, the switching element is a lower electrode of Ta, the insulating film is an oxide film or oxynitride film of Ta, and the upper electrode is made of Cr. It has an MIM structure (metal insulator metal), and after the Cr of the upper electrode is etched to a predetermined size using photolithography, Cr is further etched to a predetermined size.
A method for manufacturing a liquid crystal display device, characterized in that the liquid crystal display device is produced by electrolytic plating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2177100A JPH0466919A (en) | 1990-07-04 | 1990-07-04 | Production of liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2177100A JPH0466919A (en) | 1990-07-04 | 1990-07-04 | Production of liquid crystal display device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0466919A true JPH0466919A (en) | 1992-03-03 |
Family
ID=16025145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2177100A Pending JPH0466919A (en) | 1990-07-04 | 1990-07-04 | Production of liquid crystal display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0466919A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005258382A (en) * | 2004-02-09 | 2005-09-22 | Hitachi Ltd | Screen, fresnel lens sheet used for same, and image display apparatus using same |
JP2009136213A (en) * | 2007-12-06 | 2009-06-25 | Doggy Man H A Co Ltd | Apparatus for housing lead for pet |
-
1990
- 1990-07-04 JP JP2177100A patent/JPH0466919A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005258382A (en) * | 2004-02-09 | 2005-09-22 | Hitachi Ltd | Screen, fresnel lens sheet used for same, and image display apparatus using same |
JP4701640B2 (en) * | 2004-02-09 | 2011-06-15 | 株式会社日立製作所 | Screen, Fresnel lens sheet used therefor, and image display device using the same |
JP2009136213A (en) * | 2007-12-06 | 2009-06-25 | Doggy Man H A Co Ltd | Apparatus for housing lead for pet |
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