JPS5835991A - High-density thermoelectric element - Google Patents

Abstract

PURPOSE:To conduct direct electric power generation and the direct heating and cooling of a solid, a liquid and a gas efficiently by integrating a thermocouple with high density. CONSTITUTION:A semiconductor sheet 11 is machined in form shown in the figure. P type semiconductors 12 are formed in predetermined width at regular intervals by using a photoetching method or an electron-beam lithographic method. N type semiconductors 13 are shaped in prescribed width at intervals, through which the semiconductors 13 are not mutually connected, among the semiconductors 12 in the same manner as the semiconductors 12. Conductors 14 are evaporated onto the whole plane, and the semiconductors 12, 13 are left so as to be connected in series through photoetching or electron-beam lithography. Terminal wires 15, 16 are connected, and a thermoelectric element piece is obtained. The thermoelectric element pieces formed in this manner are integrated and unified, and the high-density thermoelectric element is shaped.

Description

[Detailed Description of the Invention] The present invention relates to the manufacturing method and application of high-density thermoelectric elements, and is particularly suitable for use in generators and heat pumps without moving parts that utilize temperature differences between solids, liquids, and gases. Concerning the manufacturing method and application of high-density thermoelectric elements.

There are various methods for power generation and heat pumps, such as mechanical, electronic, and chemical methods, but electronic methods have no moving parts and can directly generate power or heat and cool as a heat pump. .

When one end of a loop (called a thermocouple) connected to a different metal is made hot and the other end is made cold, an electromotive force is generated due to the Seebeck effect. Conversely, when a current is passed through a thermocouple, one end absorbs heat and the other end generates heat due to the Beltier effect. This foreign metal is N
If a P-type semiconductor and a P-type semiconductor are used, the electromotive force, heat absorption (cooling), and heat generation (heating) will further increase.

In FIG. 1, an N-type semiconductor 2 and a P-type semiconductor 3 are connected by a conductor 1, and a conductor 4 is attached to the other end to form a loop with a load 5. . When the conductor 1 is brought to a high temperature and the conductor 4 is brought to a low temperature, a current flows through the load 5. However, since the electromotive force per pair (a pair of a P-type semiconductor and an N-type semiconductor) is small, the electromotive force increases when multiple pairs are connected in series. FIG. 2 shows a diagram of three pairs connected in series.

In FIG. 3, when a power source 6 is connected to the load 5 shown in FIG. 2 and a current is applied, the conductor 4 absorbs heat and the conductor 1 generates heat.

FIG. 4 shows an outline of a conventional thermoelectric element structure. An N-type semiconductor 2 and a P-type semiconductor 3 are soldered to conductors 1 and 4 and connected in series. Lead wires 9 and 10 are attached to the terminals and serve as an outlet for taking out and supplying electricity. The heat conduction plate 7°8 provides a temperature difference between high and low temperatures, and absorbs and generates heat.

The disadvantages of conventional thermoelectric elements are as follows.

(1) It is difficult to manufacture multiple pairs of N-type semiconductors and P-type semiconductors connected in series.

(2) The electromotive force is small.

(3) When used as a heat pump, it has low voltage and large current.

(4) The temperature difference cannot be increased.

(5) Poor heat and electricity conversion efficiency.

(6) The number of pairs of N-type and P-type semiconductors per area cannot be increased to a high density.

(Power: Large-output generators and heat pumps are not possible.

(8) Not suitable for mass production.

(9) It is expensive.

00) Cannot be made smaller.

The purpose of the present invention is to overcome the drawbacks of the prior art described above, and to efficiently generate electricity directly and directly heat and cool solids, liquids, and gases by using temperature differences between solids, liquids, and gases without moving parts. The purpose of the present invention is to provide a high-density thermoelectric element. In addition, by applying multiple high-density thermoelectric elements in combination, we can utilize only the temperature difference between solids, liquids, and gases.
Provides the ability to increase the temperature difference between gases.

Regarding the use of thermal energy, if there is a small temperature difference, it is difficult to convert it into electrical or mechanical energy using conventional technology, so it is hardly used.

Therefore, (1) When the temperature difference is small, the electromotive force per thermocouple is small, so connect multiple thermocouples in series with high density.
Efficiently converts into electrical energy.

(2) The manufacturing method can be easily manufactured by "photo-etching method" or "electron beam drawing method".

(3) By utilizing temperature differences between solids, liquids, and gases and combining multiple high-density thermoelectric elements, the high temperature side can be heated to even higher temperatures, and the low temperature side can be heated to higher temperatures without external mechanical or electrical energy supply. Lower the temperature further.

Examples of the present invention will be described with reference to FIG. 5 and subsequent figures.

Components having the same functions as those in FIGS. 1 to 4 are also applied to FIGS. 5 and onward.

The present invention has four types of manufacturing methods and three types of application ranges for high-density thermoelectric elements.

Manufacturing method (1) shows the manufacturing steps from FIG. 5 to FIG. 8.

Manufacturing method (2) shows the manufacturing steps from FIG. 9 to FIG. 12.

The steps of completing the thermoelectric element pieces completed in manufacturing method (1) and manufacturing method (2) into a high-density thermoelectric element are shown in FIGS. 13 to 18.

Manufacturing method (3) shows the manufacturing steps from FIG. 19 to FIG. 27.

Manufacturing method (4) shows the manufacturing steps from FIG. 28 to FIG. 35.

FIGS. 36 and 37 show diagrams of a completed high-density thermoelectric element that summarizes the thermoelectric element pieces completed in manufacturing method (3) and m-method (4).

A temperature difference direct generator is shown in FIGS. 38 to 43.

Direct heat pumps are shown in Figures 44-49.

A temperature difference direct cooling heater is shown in FIGS. 50 and 51.

Actual application examples are shown in FIGS. 52 to 54.

Manufacturing method (1) P-type semiconductors and N-type semiconductors are alternately arranged in a plane on a semiconductor thin plate and connected with conductors.

Do the same on the back side. Although FIG. 8 is a series connection diagram of a P-type semiconductor and an N-type semiconductor in one plane, it is also possible to have multiple stages.

Next, the manufacturing process will be explained.

Step 1: Process the semiconductor thin plate 11 into a shape as shown in FIG.

Step 2: P-type semiconductors 12 shown in FIG. 6 are formed at regular intervals and with a constant width using techniques such as oxidation, diffusion, ion implantation, photolithography, and vapor deposition.

Step 3, as shown in FIG. 7, in the same manner as step 2, N
A type semiconductor 13 is formed at a constant width in the middle of the P type semiconductor 12 at intervals that do not touch each other.

In step 4, FIG. 8, a conductor 14 is deposited on the entire plane, and a P-type semiconductor 12 and an N-type semiconductor 1 are formed by photolithography or electron beam lithography.
Leave 3 connected in series.

Finish by spot welding the terminal wires 15 and 16.

Manufacturing method (2) A P-type semiconductor and an N-type semiconductor are wound around a thin semiconductor plate in a screw shape. This manufacturing process is shown below.

Step 1, FIG. 9, shows a semiconductor thin plate 11 having the same shape as that in FIG.
10, a P-type semiconductor 12 is formed on one side and an N-type semiconductor layer 3 is formed on the other side by impurity diffusion or ion implantation.

Step 2: The conductor 14 shown in FIG. 11 is deposited on both end faces to couple the P-type semiconductor 12 and the N-type semiconductor 13.

Step 3: As shown in FIG. 12, P-type semiconductors and N-type semiconductors are formed by photolithography or electron beam lithography so as to be connected alternately in series in a screw shape. Spot welding of the terminal wire 15 is completed.

The thermoelectric element pieces completed by manufacturing method (1) and manufacturing method (2) are
As shown in FIG. 13, insulating plates 18 and thermoelectric element pieces 17 are arranged alternately. As a substitute for the insulating plate 18, the surface of the thermoelectric element piece is
Insulating surface treatment may be performed using an insulating paint or an oxide film.

In FIG. 13, the assembled thermoelectric element pieces are shown in the first
As shown in Figure 4, the terminal wires 15, 16 and lead wires 910 are spot welded or brazed to the terminal block 20 while being held down by the frame 19.

A high-density thermoelectric element is completed by bonding the insulating heat conductive plates 7 and 8 with an adhesive. However, the connection method of the thermoelectric element piece 17 is as shown in FIG. 16 to FIG.
Select parallel or series/parallel wiring depending on the usage.

Manufacturing method (3) P-type semiconductors and N-type semiconductors are alternately planted on a semiconductor thin plate like the eyes of a substrate, and are electrically connected in series on both sides.

Step 1: A plurality of thin plates of the P-type semiconductor 23 and the N-type semiconductor 24 shown in FIG. 19 are prepared.

Step 2: As shown in FIG. 20, the surfaces of the P-type semiconductor 23 and N-type semiconductor 24 are subjected to insulating surface treatment by applying an oxide film or an insulating paint.

Step 3. Semiconductor thin plates 26 and 27, which have been subjected to insulating surface treatment, are arranged alternately as shown in FIG. 21 and solidified into one piece by sintering or adhesive.

The product integrated in Steps 4 and 3 is cut perpendicular to the bonding direction as shown in FIG. 22 to produce a semiconductor thin plate 28 in which P-type semiconductors and N-type semiconductors are alternately striped. .

The semiconductor thin plate completed in Step 5 and Step 4 is transferred to Step 2.
Repeat step 3 again to integrate again as shown in FIG.

Step 6: If the material shown in Fig. 23 is cut parallel to the plane as shown in Fig. 24, it will have a base pattern as shown in Fig. 25.
A plate 29 is formed in which the type semiconductor and the N type semiconductor are alternately coated with an oxide film or an insulating paint, so that they are insulated and isolated.

Step 7: As shown in FIG. 26, conductors 14 are deposited on both sides.

Step 8: As shown in FIG. 27, the conductor 14 is left and other parts are removed by photolithography or electron beam lithography so that the N-type semiconductor and the P-type semiconductor are connected in series.

Manufacturing method (4) The format is the same as manufacturing method (3), but the method of creating an insulating boundary between the P-type semiconductor and the N-type semiconductor is different.

Step 1: Conductors 14 are deposited on both sides of the semiconductor thin plate 11 shown in FIG. 28 as shown in FIG. 29.

Step 2: As shown in Figure 30, grooves are made in the pattern of the base plate from both sides using photoetching or electron beam lithography. FIG. 31 shows its cross section.

Step 3: An oxide film crystal 30 is grown from the base as shown in □ in FIG. 31, and the semiconductor is insulated and isolated from both sides as shown in FIG. 32.

Step 4: As shown in FIG. 33, isolated semiconductors are formed by alternately repeating impurity diffusion and ion implantation on the N-type semiconductor 12 and the P-type semiconductor 13.

Step 5: As shown in FIGS. 34 and 35, after the conductor 14 is vapor-deposited so that the N-type semiconductor 12 and the P-type semiconductor 13 are connected in series, the conductor 14 is patterned by photolithography or electron beam lithography. A thermoelectric element piece is completed, leaving a portion of the conductor 14.

Thermoelectric element piece 29 completed by manufacturing method (3) and manufacturing method (4)
゜31, as shown in Fig. 36, after spot welding the terminal wires 15 and 16, insulating heat conductive plates 7 and 8 are glued,
It is fixed to the terminal block 20 together with the lead wires 9 and 10 by spot welding or brazing. FIG. 37 shows an outline of the completed high-density thermoelectric element.

The high-density thermoelectric elements completed in the temperature difference direct generator manufacturing methods (1) to (4) are applied as a temperature difference direct generator. FIG. 38 schematically shows a temperature difference direct generator. The heat conduction part 33 is heated with solid, liquid, gas, etc., and the heat conduction part 34 is
When solid, liquid, gas, etc. are cooled, the high-density thermoelectric element 32 generates DC electricity at the output terminals 21 and 22. If the heating and cooling are reversed, the output terminals 21 and 22 will be
The polarity is reversed.

If you want to increase the output voltage value, connect multiple units in series. FIG. 39 shows a diagram in which three high-density thermoelectric elements 32 are connected in series.

If you want to increase the output current value, connect multiple units in parallel. FIG. 40 shows a diagram in which three devices are connected in parallel.

When the temperature difference is large and the output of each high-density thermoelectric element becomes saturated, a plurality of thermoelectric elements are multiplexed to reduce the temperature difference between each element and improve efficiency. An outline is shown in FIG.

A high-power type temperature difference direct generator can be achieved by connecting a plurality of generators in series, parallel, and multiplex as described above.

FIG. 41: FIG. 42 shows a diagram of a temperature difference direct generator in which nine high-density thermoelectric elements 32 are connected. FIG. 43 shows the case where n pieces are connected.

Direct heat pump High-density thermoelectric elements are applied as a direct heat pump. Lou 4
Figure 4 shows a schematic of a direct heat pump. When electrical energy is supplied from the DC power supply 35 to the high-density thermoelectric element 32,
The heat conduction section 34 absorbs heat, and the heat conduction section 33 generates heat. If the polarity of the power supply is reversed, heat generation and heat absorption will also be reversed.

When the power source is high voltage and low current, multiple high-density thermoelectric elements are connected in series. FIG. 45 shows a diagram in which three devices are connected in series.

When the power source is low voltage and high current, connect multiple high-density thermoelectric elements in parallel. FIG. 46 shows a diagram in which three devices are connected in parallel.

If you want to increase the temperature difference, the temperature difference of each high-density thermoelectric element will become saturated, so multiple thermoelectric elements should be multiplexed.
Reduce the temperature difference per piece.

An outline is shown in FIG.

A large-sized direct heat pump can be achieved by connecting a plurality of heat pumps in series, parallel, or multiplex as described above. 47th
Figure 48 shows a diagram of a direct heat pump in which nine high-density thermoelectric elements are connected.

Temperature difference direct cooling heater By combining multiple high-density thermoelectric elements, it is applied to a temperature difference direct cooling heater that further increases the temperature difference.

FIG. 50 is a schematic diagram of a temperature difference direct heater.

Heat flows from the high temperature heat conduction section 33 to the low temperature heat conduction section 34 via the high density thermoelectric element 32 . At this time, the high-density thermoelectric element 32 generates electricity. When this electrical energy is supplied to the high-density thermoelectric element 36, heat is absorbed from the high-temperature heat conduction part 33,
Heat is generated in the heating section 37.

Therefore, the heating section 37 has a higher temperature than the high-temperature heat conducting section 33, and can be heated using the temperature difference.

FIG. 51 is a schematic diagram of a temperature difference direct cooler.

Heat flows from the high temperature heat conduction section 33 to the low temperature heat conduction section 34 via the high density thermoelectric element 32. At this time, the high-density thermoelectric element 32 generates power. When this electrical energy is supplied to the high-density thermoelectric element 36, it absorbs heat from the cooling section 38 and radiates the heat to the low-temperature heat conduction section 34. Therefore, the temperature of the cooling part 38 is lower than that of the low-temperature heat conducting part 34, and the cooling part 38 can be cooled by utilizing the temperature difference.

As described above, cooling and heating are possible using the temperature difference, and a temperature difference direct cooling/heating device is completed.

FIG. 52 shows a temperature difference direct generator using solar heat.

A heating conductor 41 is located at the center of the condenser mirror 40 . Furthermore, a high-density thermoelectric element 32 is attached to be sandwiched between the heating conductor 41 and the cooling conductor 39.

The condensing mirror 40 condenses sunlight and heats the heating conductor 41 . When the cooling conductor 39 is air-cooled or liquid-cooled, a temperature difference is generated between the heating conductor 41 and the cooling conductor 39. This temperature difference generates an electromotive force in the high-density thermoelectric element 32 to generate electricity. Direct current electricity can be extracted from the output terminals 21 and 22.

FIG. 53 shows a temperature difference direct heater using mineral springs.

There is a high density thermoelectric element 32 between the water heater 44 and the cooler 42 . Further, on the opposite side, there are multiple high-density thermoelectric elements 36 between the water heater 44 and the heater 43. High density thermoelectric element 32.3
6 are wired and electrically coupled.

300 mineral spring water enters from INI, is divided into water heater 44 and heater 43, and flows out from 0UTI and 0UT3. I
From N2, 10C cooling water flows through the cooler 42 to 0UT.
It flows out from 2.

The water heater 44 is approximately 30C with mineral spring water of 30C,
The temperature of the cooler 42 is approximately 10C due to the cooling water 10C.

This temperature difference causes heat to flow from the water heater 44 through the high density thermoelectric element 32 to the cooler 42 . At this time, the high-density thermoelectric element 32 generates electricity and supplies it to the high-density thermoelectric element 36. The high-density thermoelectric element 36 absorbs heat from the water heater 44 and
radiates heat. The mineral spring water 301m'' in the heater 43 is heated and its temperature further rises. By restricting the flow rate from 0UT3, hot spring water at an appropriate temperature up to the maximum heating capacity can be obtained.

Therefore, this temperature difference direct heater can raise the temperature only by temperature difference without using fuel or heater.

FIG. 54 shows a temperature difference direct cooler using outside air temperature.

A high-density thermoelectric element 3 is placed between the outside air heat absorbing body 45 and the cooling body 49.
There are 2. The inside air heat absorber 47 is located in the room 48 and the high density thermoelectric elements 36 are located between the cooling bodies 46 . Cooling body 46.4
9 is cooled by groundwater. High density thermoelectric element 32
．． 36 are wired and electrically coupled.

If the outside temperature is 30C and the groundwater is 1-20C, there will be a temperature difference of 1.

The outside air heat absorbing body 45 has a power of about 30 tZ', and the cooling body 49 has a power of about 120 tZ'. Due to this temperature difference, the high-density thermoelectric element generates electricity and supplies power to the high-density thermoelectric element 36.

The high-density thermoelectric element 36 absorbs heat from the indoor heat absorbing body 47 and radiates heat to the cooling body 46 . The interior of the room 48 is cooled by a cooling body 47 .

Therefore, a temperature difference direct cooler can cool only by temperature difference.

(1) According to the present invention, it is possible to manufacture high-density thermoelectric elements, and there is an effect that electric power can be generated directly and efficiently using temperature differences.

(2) According to the present invention, it is easy to manufacture, so it is easy to mechanize, mass production is possible, and the cost is reduced.

(3) According to the present invention, since there are no moving parts, there is no wear, vibration, or noise, resulting in a long life.

(4) According to the present invention, the temperature difference can be used to further heat the cooled material, resulting in an energy saving effect.

(5) According to the present invention, it is possible to increase the density, so there is an effect that it can be made smaller and lighter.

[Brief explanation of drawings]

FIG. 1 is a diagram showing the principle of temperature difference power generation. FIG. 2 is a series connection diagram of temperature difference power generation. FIG. 3 is a principle diagram of a direct heat pump. FIG. 4 is a structural diagram of a conventional thermoelectric element. Figure 5 also shows the method for manufacturing thermoelectric element pieces (1 to 8).
) is a process diagram. FIG. 9 to FIG. 12 are process diagrams of the method (2) for manufacturing a thermoelectric element piece. Figures 13 to 18
The figures up to the figure are manufacturing method (1). It is a process diagram of completing a thermoelectric element piece completed by manufacturing method (2) into a high-density thermoelectric element. FIG. 19 to FIG. 27 are process diagrams of the method (3) for manufacturing a thermoelectric element piece. 28th
The drawings to FIG. 35 are process diagrams of the method (4) for manufacturing a thermoelectric element piece. FIG. 36 is a completed cross-sectional view of thermoelectric element pieces completed by manufacturing methods (3) and (4) assembled into a high-density thermoelectric element. FIG. 37 is a sketch of the same as above. FIGS. 38 to 43 are high-density thermal oxygen element connection wiring diagrams of the temperature difference direct generator. 44 to 49 are high-density thermoelectric element connection wiring diagrams of a direct heat pump. 50th
Figure 1 is a schematic diagram of a temperature difference direct heater, and Figure 51 is a schematic diagram of a temperature difference direct cooler. FIG. 52 is a schematic diagram of a temperature difference direct generator using solar heat. 53rd
The figure is a schematic diagram of a temperature difference direct heater that turns mineral springs into hot springs. FIG. 54 is a schematic diagram of a temperature difference direct cooler that uses outside air temperature for cooling. DESCRIPTION OF SYMBOLS 1... Conductor, 2... N-type semiconductor, 3... P-type semiconductor, 4... Conductor, 5... Load, 6... Power supply, 7...
... Heat conduction plate, 8 ... Heat conduction plate, 9 ... Lead wire,
10...Lead wire, 11...Semiconductor thin plate, 12...
- P type semiconductor, 13... N type semiconductor, 14... Conductor, 15... Terminal wire, 16... Terminal wire, 17... Thermoelectric element piece, 18... Insulating plate, 19.・Shape, 20
... terminal block, 21 ... terminal, 22 ... terminal, 23
... P-type semiconductor thin plate, 24... N-type semiconductor thin plate,
25... Insulating coating rL 26... N-type semiconductor thin plate with insulating coating, 27... N-type semiconductor thin plate with insulating coating, 28.
... PN type semiconductor thin plate, 29... PN base semiconductor thin plate, 30... Oxide film crystal, 31... PN base semiconductor thin plate, 32... High-density thermoelectric element, 33... Thermal conduction Part, 34... Heat conduction part, 35... DC power supply, 36
...High-density thermoelectric element, 37... Heating section, 38...
Cooling unit, 39... Cooling conductor, 40... Condensing mirror, 41
... Heating conductor, 42 ... Cooler, 43 ... Heater, 44 ... Water heater, 45 ... Outside air heat absorber, 46 ...
・Cooling body, 47...Inside air heat absorbing body, 1"1 2
om 茗2tm $zz6jJ '$ 34/XJ 7 SuJ7's de -0 Fig. 38 Fig. 39 Fig. 40 Fig. 3 Tei 4I Fig. j Fig. 42 Fig. 93 Fig. 44 Fig. 45 Fig. 47 Fig. $48 Fig. 50 Figure 7 $ 522 Figure 53 s4tb

Claims (1)

[Claims] 1. A high-density thermoelectric element characterized by a high degree of integration of thermocouples.