JPH0320909B2 - - Google Patents

Description

Detailed Description of the Invention The present invention relates to a high-density thermoelectric element, particularly a high-density thermoelectric element that generates an electromotive force by applying a temperature difference or generates or absorbs heat by passing an electric current. Regarding.

When one end of a loop (called a thermocouple) made of wires of dissimilar metals is made hot and the other end is made cold, an electromotive force is generated due to the Seebeck effect. Conversely, when a current is passed through a thermocouple, one end absorbs heat and the other end generates heat due to the Pétilé effect. Instead of this different metal, N-type semiconductor and P
If a shaped semiconductor is used, electromotive force and heat absorption (cooling and
Heat generation (heating) increases.

In FIG. 1, an N-type semiconductor 2 and a P-type semiconductor 3
Connect with conductor 1, attach conductor 4 to the other end, and load 5
Connect to make a loop. When the conductor 1 is brought to a high temperature and the conductor 4 is brought to a low temperature, a current flows through the load 5. However, the electromotive force per pair (a pair of P-type semiconductor and N-type semiconductor) is small. Therefore, in order to obtain a large electromotive force, it is recommended to connect multiple pairs in series. FIG. 2 shows a diagram of three pairs connected in series.

In Figure 3, instead of the load 5 in Figure 2,
When a power source 6 is provided and a current is applied, the conductor 4 absorbs heat and the conductor 1 generates heat.

FIG. 4 schematically shows a conventional thermoelectric element structure. N
A type semiconductor 2 and a P type semiconductor 3 are soldered to conductors 1 and 4 and connected in series. Lead wires 9 and 10 are attached to the terminals to serve as electricity extraction and supply ports. In order to generate the starting force, a temperature difference between high and low temperatures is applied to the heat conductive plates 7 and 8, and when an electric current is passed, the heat conductive plates 7 and 8 absorb heat and generate heat.

The disadvantages of conventional thermoelectric elements are as follows.

(1) N-type semiconductors It is difficult to manufacture multiple pairs of P-type semiconductors connected in series.

(2) Low electromotive force.

(3) Low voltage and large current when used as a heat pump.

(4) It is difficult to obtain a large temperature difference.

(5) Poor heat and electricity conversion efficiency.

(6) It is not possible to increase the density of N-type and P-type semiconductor pairs per area.

(7) Large-output generators and heat pumps are not possible.

(8) Not suitable for mass production.

(9) It is expensive.

(10) Cannot be made smaller.

An object of the present invention is to provide a high-density thermoelectric element suitable for solving such problems.

The present invention is characterized by a semiconductor thin plate, a plurality of P-type semiconductors formed in a planar shape at intervals on one surface of the semiconductor, and a plurality of P-type semiconductors formed in a planar shape at intervals on the other surface of the semiconductor thin plate. and a conductor for alternately connecting the plurality of P-type semiconductors and the plurality of N-type semiconductors in series.

Figures 5-7 show one embodiment of a high density thermoelectric element according to the present invention. In the same figure, semiconductor thin plate 1
1, a plurality of P-type semiconductors 12 are formed diagonally in a planar manner at intervals, and on the other surface, a plurality of N-type semiconductors 13 are formed in a planar shape at intervals. The N-type semiconductor 13 is tilted in the opposite direction to the P-type semiconductor 12, and these P-type and N-type semiconductors are connected in series via conductors 14 in a kind of screw-like fashion. 14' is a terminal conductor formed by vapor deposition at one end of a series connection body of an N-type semiconductor, a conductor, and a P-type semiconductor;
5 are joined by spot welding. The same goes for the other end of the series connection body, but that part is omitted in the figure.

The thermoelectric elements shown in FIGS. 5-7 can be easily manufactured as follows. In other words, first the 8th
A semiconductor thin plate 11 is prepared as shown in FIG. next,
One surface of the semiconductor thin plate 11 is covered with the markings shown in FIG. 8B.
A P-type semiconductor 12 is formed in a layered manner by ion implantation or impurity diffusion as shown in FIG. form. Thereafter, as shown in FIG. 8C, a layered conductor 14 is formed on both end faces of the semiconductor thin plate 11 so as to span the P-type and N-type semiconductors 12 and 13 by vapor deposition. Finally, as shown in FIG. 5, the P-type semiconductor 12 and the N-type semiconductor 1 are
3 are connected in series through a conductor 14 in a threaded manner.

As can be seen from the above explanation, the present invention provides the following effects.

(1) High-density thermoelectric elements can be obtained. Therefore, when this is used for generating electromotive force, a large electromotive force can be obtained with a small temperature difference. Additionally, when used as a heat pump, it can absorb and generate heat with large voltage and small current.

(2) Small high-density thermoelectric elements can be easily manufactured.

[Brief explanation of drawings]

Figure 1 is a diagram of the principle of temperature difference power generation, Figure 2 is another diagram of the principle of temperature difference power generation, Figure 3 is a diagram of the principle of a heat pump, Figure 4 is a front view of a conventional thermoelectric element, and Figure 5 is a front view of a high-density thermoelectric element showing one embodiment based on the present invention, FIG. 6 is a side view of FIG. 5, FIG. 7 is a bottom view of FIG. 5, and FIG. 8 is shown in FIG. It is a figure explaining the manufacturing process of a high-density thermoelectric element. 11...Semiconductor, 12...P-type semiconductor, 13...
...N-type semiconductor, 14...Conductor, 15...Terminal wire.

Claims (1)

[Claims] 1. A semiconductor thin plate, a plurality of P-type semiconductors formed in a planar shape at intervals on one surface of the semiconductor thin plate,
A plurality of N-type semiconductors formed in a planar shape at intervals on the other surface of the semiconductor thin plate, and a conductor for alternately connecting the plurality of P-type semiconductors and the plurality of N-type semiconductors in series. A high-density thermoelectric element.