JPS5832448A - 相補型ｍｏｓ電界効果トランジスタの製造方法 - Google Patents

相補型ｍｏｓ電界効果トランジスタの製造方法

Info

Publication number
JPS5832448A
JPS5832448A JP57028445A JP2844582A JPS5832448A JP S5832448 A JPS5832448 A JP S5832448A JP 57028445 A JP57028445 A JP 57028445A JP 2844582 A JP2844582 A JP 2844582A JP S5832448 A JPS5832448 A JP S5832448A
Authority
JP
Japan
Prior art keywords
type
region
impurities
effect transistor
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57028445A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6359547B2 (enrdf_load_stackoverflow
Inventor
Michihiro Oota
太田　道宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57028445A priority Critical patent/JPS5832448A/ja
Publication of JPS5832448A publication Critical patent/JPS5832448A/ja
Publication of JPS6359547B2 publication Critical patent/JPS6359547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP57028445A 1982-02-24 1982-02-24 相補型ｍｏｓ電界効果トランジスタの製造方法 Granted JPS5832448A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57028445A JPS5832448A (ja) 1982-02-24 1982-02-24 相補型ｍｏｓ電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57028445A JPS5832448A (ja) 1982-02-24 1982-02-24 相補型ｍｏｓ電界効果トランジスタの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50023182A Division JPS5197388A (en) 1975-02-24 1975-02-24 Sohogata mos denkaikokatoranjisutanoseizohoho

Publications (2)

Publication Number Publication Date
JPS5832448A true JPS5832448A (ja) 1983-02-25
JPS6359547B2 JPS6359547B2 (enrdf_load_stackoverflow) 1988-11-21

Family

ID=12248868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57028445A Granted JPS5832448A (ja) 1982-02-24 1982-02-24 相補型ｍｏｓ電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5832448A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100463A (ja) * 1984-10-01 1985-06-04 Nec Corp 半導体集積回路の製造方法
JPS61150363A (ja) * 1984-12-25 1986-07-09 Sony Corp 半導体装置の製造方法
JPS61156763A (ja) * 1984-12-27 1986-07-16 Sony Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60100463A (ja) * 1984-10-01 1985-06-04 Nec Corp 半導体集積回路の製造方法
JPS61150363A (ja) * 1984-12-25 1986-07-09 Sony Corp 半導体装置の製造方法
JPS61156763A (ja) * 1984-12-27 1986-07-16 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6359547B2 (enrdf_load_stackoverflow) 1988-11-21

Similar Documents

Publication Publication Date Title
US3898105A (en) Method for making FET circuits
JPS61501948A (ja) Ｃｍｏｓ集積回路技法
JPS5832448A (ja) 相補型ｍｏｓ電界効果トランジスタの製造方法
JPS61263274A (ja) 半導体装置の製造方法
KR920007200A (ko) BiCMOS형 전계효과 트랜지스터 및 그의 제조방법
JPS63278265A (ja) 半導体ＢｉＣＭＯＳ装置の製造方法
JPH06169089A (ja) 縦型ｍｏｓｆｅｔの製造方法
JPS61156858A (ja) 相補型ｍｏｓ電界効果トランジスタの製造方法
JP2000164727A (ja) 半導体装置の製造方法
JPS63302562A (ja) Ｍｏｓ型半導体装置の製造方法
JPS608623B2 (ja) 半導体素子の製造方法
JPS60253217A (ja) 半導体装置の製造方法
JPH11121394A (ja) 半導体装置の製造方法
JPS59220972A (ja) Ｍｏｓ形半導体装置およびその製造方法
JP2848274B2 (ja) 半導体装置の製造方法
JPS6142960A (ja) 半導体装置の製造方法
JPS62109364A (ja) 半導体装置の製造方法
JPH04215442A (ja) 半導体装置の製造方法
JPS6043028B2 (ja) 半導体装置の製造方法
JPS5837697B2 (ja) Ｍｉｓ ガタハンドウタイシユウセキカイロソウチ
JPS5931225B2 (ja) 集積回路装置の製造方法
JPH045832A (ja) Ｍｉｓ型トランジスタ
JPH1050859A (ja) 半導体集積回路の製造方法
JPH0493018A (ja) Ｍｏｓ型半導体装置の製造方法
JPS6348179B2 (enrdf_load_stackoverflow)