JPS5829615B2 - コウヒテイコウカゴウブツハンドウタイ ノ キソウセイチヨウホウ - Google Patents

コウヒテイコウカゴウブツハンドウタイ ノ キソウセイチヨウホウ

Info

Publication number
JPS5829615B2
JPS5829615B2 JP49105523A JP10552374A JPS5829615B2 JP S5829615 B2 JPS5829615 B2 JP S5829615B2 JP 49105523 A JP49105523 A JP 49105523A JP 10552374 A JP10552374 A JP 10552374A JP S5829615 B2 JPS5829615 B2 JP S5829615B2
Authority
JP
Japan
Prior art keywords
chloride
reaction vessel
gallium
gas
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49105523A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5133561A (en
Inventor
昭洋 柴富
正幸 地福
建弥 中井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP49105523A priority Critical patent/JPS5829615B2/ja
Publication of JPS5133561A publication Critical patent/JPS5133561A/ja
Publication of JPS5829615B2 publication Critical patent/JPS5829615B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP49105523A 1974-09-14 1974-09-14 コウヒテイコウカゴウブツハンドウタイ ノ キソウセイチヨウホウ Expired JPS5829615B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP49105523A JPS5829615B2 (ja) 1974-09-14 1974-09-14 コウヒテイコウカゴウブツハンドウタイ ノ キソウセイチヨウホウ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49105523A JPS5829615B2 (ja) 1974-09-14 1974-09-14 コウヒテイコウカゴウブツハンドウタイ ノ キソウセイチヨウホウ

Publications (2)

Publication Number Publication Date
JPS5133561A JPS5133561A (en) 1976-03-22
JPS5829615B2 true JPS5829615B2 (ja) 1983-06-23

Family

ID=14409943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49105523A Expired JPS5829615B2 (ja) 1974-09-14 1974-09-14 コウヒテイコウカゴウブツハンドウタイ ノ キソウセイチヨウホウ

Country Status (1)

Country Link
JP (1) JPS5829615B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006024597A (ja) * 2004-07-06 2006-01-26 Furukawa Co Ltd 気相成長装置およびiii族窒化物半導体膜の形成方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62219590A (ja) * 1986-03-19 1987-09-26 Nec Corp 光半導体集積素子及びその製造方法
JPH0818901B2 (ja) * 1989-01-13 1996-02-28 日本電気株式会社 気相成長方法及び埋め込み構造半導体レーザの製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF THE ELECTROCHEMICAL SOCIETY=1966 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006024597A (ja) * 2004-07-06 2006-01-26 Furukawa Co Ltd 気相成長装置およびiii族窒化物半導体膜の形成方法

Also Published As

Publication number Publication date
JPS5133561A (en) 1976-03-22

Similar Documents

Publication Publication Date Title
US6632725B2 (en) Process for producing an epitaxial layer of gallium nitride by the HVPE method
US4404265A (en) Epitaxial composite and method of making
US3888705A (en) Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements
JPH02230722A (ja) 化合物半導体の気相成長方法
Ihara et al. Vapor‐phase epitaxial growth of GaAs in a nitrogen atmosphere
US3192083A (en) Method for controlling donor and acceptor impurities on gaseous vapor through the use of hydrogen halide gas
US3471324A (en) Epitaxial gallium arsenide
US3975218A (en) Process for production of III-V compound epitaxial crystals
JPS59188118A (ja) 気相エピタキシヤル結晶の製造方法
Shohno et al. Crystal growth of boron monophosphide using a B2H6-PH3-H2 system
JPS60169563A (ja) テルル化金属の製造方法及び装置
JPS6115150B2 (enExample)
JPS62235300A (ja) 3−5族化合物半導体の気相成長方法
JPH02230723A (ja) 化合物半導体の気相成長方法
JP2714824B2 (ja) 分子線エピタキシャル成長方法及びそれを実施する装置
Shaw 2.4-Chemical Vapor Deposition
JPS5895696A (ja) 気相成長方法
JPS6291497A (ja) 化合物半導体の気相成長方法及びそれに使用する気相成長装置
Görög et al. Epitaxial growth of AIIIBV semiconductors from vapour phase
JPS63278340A (ja) 2−6族化合物薄膜の製造方法
Hahn Direct growth of mercury (1-x) cadmium (x) telluride by cold wall, pyrolytic OMVPE
JPS60151298A (ja) 有機金属気相結晶成長方法
JPS58184721A (ja) P型3−v族化合物半導体の気相エピタキシヤル成長方法
JPS5899198A (ja) 気相成長方法
JPS63204733A (ja) 化合物半導体膜の製造方法