JPS5828873A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5828873A
JPS5828873A JP12614181A JP12614181A JPS5828873A JP S5828873 A JPS5828873 A JP S5828873A JP 12614181 A JP12614181 A JP 12614181A JP 12614181 A JP12614181 A JP 12614181A JP S5828873 A JPS5828873 A JP S5828873A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
semiconductor device
type
mask
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12614181A
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain a semiconductor device wherein an evaporation-stack-formed NSCS by a plasma CVD method, etc. is formed on a substrate by utilizing its characteristic and which is more excellent than a conventional insulating gate type field effect semiconductor device in facilitations of manufacture and integration, further in a low voltage and a high speed response. CONSTITUTION:To constitute a channel forming region on the substrate 1, an NSCS53 (I layer) is formed 0.1-1mum thick, a mask 21 is formed on the upper surface thereof, and an N<+> type NSCS45 and a P type NSCS25 are likewise selectively manufactured 0.1-1mum thick. Next, oxygen is implanted into this I layer by an ion implantation resulting in a ban-isolation region 53. Subsequently, after removing the mask 21 by a lift-off method, a field inulator 31 is manufactured. Further, after manufacturing gate insulators 33, 43, an aperture 32 of an electrode, and gate electrodes 35, 45 and a lead 34 are provided.
JP12614181A 1981-08-12 1981-08-12 Semiconductor device and manufacture thereof Pending JPS5828873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12614181A JPS5828873A (en) 1981-08-12 1981-08-12 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12614181A JPS5828873A (en) 1981-08-12 1981-08-12 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5828873A true true JPS5828873A (en) 1983-02-19

Family

ID=14927683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12614181A Pending JPS5828873A (en) 1981-08-12 1981-08-12 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5828873A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63119577A (en) * 1986-11-07 1988-05-24 Toshiba Corp Thin film transistor
JPH0521794A (en) * 1991-02-04 1993-01-29 Semiconductor Energy Lab Co Ltd Dieleciric gate type field effect semiconductor device and fabrication thereof
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664566B1 (en) 1982-08-24 2003-12-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
US6028264A (en) * 1982-08-24 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of carbon
USRE38727E1 (en) 1982-08-24 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method of making the same
USRE37441E1 (en) 1982-08-24 2001-11-13 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
US6346716B1 (en) 1982-12-23 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material having particular oxygen concentration and semiconductor device comprising the same
US6180991B1 (en) 1982-12-23 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor having low concentration of phosphorous
US6503771B1 (en) 1983-08-22 2003-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectrically sensitive device
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US7038238B1 (en) 1985-05-07 2006-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a non-single crystalline semiconductor layer
US6043105A (en) * 1985-05-07 2000-03-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor sensitive devices
JPS63119577A (en) * 1986-11-07 1988-05-24 Toshiba Corp Thin film transistor
US6566175B2 (en) 1990-11-09 2003-05-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
US7507615B2 (en) 1990-11-09 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing gate insulated field effect transistors
JPH0521794A (en) * 1991-02-04 1993-01-29 Semiconductor Energy Lab Co Ltd Dieleciric gate type field effect semiconductor device and fabrication thereof
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US7456427B2 (en) 1991-08-26 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US7821011B2 (en) 1991-08-26 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7642584B2 (en) 1991-09-25 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

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