JPS5827364A - Insulated gate type field effect semiconductor device - Google Patents

Insulated gate type field effect semiconductor device

Info

Publication number
JPS5827364A
JPS5827364A JP12500381A JP12500381A JPS5827364A JP S5827364 A JPS5827364 A JP S5827364A JP 12500381 A JP12500381 A JP 12500381A JP 12500381 A JP12500381 A JP 12500381A JP S5827364 A JPS5827364 A JP S5827364A
Authority
JP
Japan
Prior art keywords
formed
field effect
semiconductor device
type field
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12500381A
Other versions
JP2593639B2 (en
Inventor
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Priority to JP56125003A priority Critical patent/JP2593639B2/en
Publication of JPS5827364A publication Critical patent/JPS5827364A/en
Application granted granted Critical
Publication of JP2593639B2 publication Critical patent/JP2593639B2/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain characteristics similar to a single crystal semiconductor even in a thin film structure of a field effect semiconductor device by forming a channel forming region under a gate at a semi-amorphous semiconductor having fine crystallinity formed on a substrate. CONSTITUTION:A pair of impurity regions 29, 30 are formed at both sides of a channel forming region on a semi-amorphous semiconductor 20 having fine crystallinity on a substrate 1. Gate electrodes 35 are formed on the channel forming region and an insulator 33. A field insulator 31 is formed on a pair of impurity regions 29, 30 forming a source and a drain.
JP56125003A 1981-08-10 1981-08-10 Insulated gate field effect semiconductor device Expired - Lifetime JP2593639B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56125003A JP2593639B2 (en) 1981-08-10 1981-08-10 Insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56125003A JP2593639B2 (en) 1981-08-10 1981-08-10 Insulated gate field effect semiconductor device

Publications (2)

Publication Number Publication Date
JPS5827364A true JPS5827364A (en) 1983-02-18
JP2593639B2 JP2593639B2 (en) 1997-03-26

Family

ID=14899464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56125003A Expired - Lifetime JP2593639B2 (en) 1981-08-10 1981-08-10 Insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JP2593639B2 (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61221409A (en) * 1985-03-25 1986-10-01 Sanshin Kensetsu Kogyo Kk Ground improvement method
US4624606A (en) * 1985-03-12 1986-11-25 N.I.T. Co., Ltd. Foundation improvement process and apparatus thereof
JPS6235039U (en) * 1985-08-15 1987-03-02
US4971480A (en) * 1989-01-10 1990-11-20 N.I.T. Co., Ltd. Ground hardening material injector
US5006017A (en) * 1989-01-27 1991-04-09 Kajima Corporation Method for improving ground of large section area
JPH04242724A (en) * 1990-12-25 1992-08-31 Semiconductor Energy Lab Co Ltd Liquid crystal display device
JPH07158050A (en) * 1993-12-03 1995-06-20 Nissan Kensetsu Kk Soil improvement work method by high-pressure injection and agitation
US5701167A (en) * 1990-12-25 1997-12-23 Semiconductor Energy Laboratory Co., Ltd. LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5944454A (en) * 1997-04-18 1999-08-31 Melegari; Cesare Land reclamation method and equipment for soil involving the introduction into the subsoil layers of a high-pressure liquid jet together with a fluid containing particles of a solid agent
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
USRE39393E1 (en) 1990-11-30 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Device for reading an image having a common semiconductor layer
JP2008045218A (en) * 2007-10-01 2008-02-28 Dowa Holdings Co Ltd Plating method and patterning method on metal-ceramic composite member, wet treatment apparatus and metal-ceramic composite member for power module

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151329A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Fabricating method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151329A (en) * 1979-05-14 1980-11-25 Shunpei Yamazaki Fabricating method of semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6660574B1 (en) 1984-05-18 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Method of forming a semiconductor device including recombination center neutralizer
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US4624606A (en) * 1985-03-12 1986-11-25 N.I.T. Co., Ltd. Foundation improvement process and apparatus thereof
JPS61221409A (en) * 1985-03-25 1986-10-01 Sanshin Kensetsu Kogyo Kk Ground improvement method
JPS6235039U (en) * 1985-08-15 1987-03-02
US4971480A (en) * 1989-01-10 1990-11-20 N.I.T. Co., Ltd. Ground hardening material injector
US5006017A (en) * 1989-01-27 1991-04-09 Kajima Corporation Method for improving ground of large section area
US6448577B1 (en) 1990-10-15 2002-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with grain boundaries
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
USRE39393E1 (en) 1990-11-30 2006-11-14 Semiconductor Energy Laboratory Co., Ltd. Device for reading an image having a common semiconductor layer
US5701167A (en) * 1990-12-25 1997-12-23 Semiconductor Energy Laboratory Co., Ltd. LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region
JPH04242724A (en) * 1990-12-25 1992-08-31 Semiconductor Energy Lab Co Ltd Liquid crystal display device
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JPH07158050A (en) * 1993-12-03 1995-06-20 Nissan Kensetsu Kk Soil improvement work method by high-pressure injection and agitation
US5944454A (en) * 1997-04-18 1999-08-31 Melegari; Cesare Land reclamation method and equipment for soil involving the introduction into the subsoil layers of a high-pressure liquid jet together with a fluid containing particles of a solid agent
JP2008045218A (en) * 2007-10-01 2008-02-28 Dowa Holdings Co Ltd Plating method and patterning method on metal-ceramic composite member, wet treatment apparatus and metal-ceramic composite member for power module

Also Published As

Publication number Publication date
JP2593639B2 (en) 1997-03-26

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