JPS5827341A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5827341A
JPS5827341A JP56126531A JP12653181A JPS5827341A JP S5827341 A JPS5827341 A JP S5827341A JP 56126531 A JP56126531 A JP 56126531A JP 12653181 A JP12653181 A JP 12653181A JP S5827341 A JPS5827341 A JP S5827341A
Authority
JP
Japan
Prior art keywords
film
region
area
mask
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56126531A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038105B2 (enExample
Inventor
Tadashi Kirisako
桐迫　正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56126531A priority Critical patent/JPS5827341A/ja
Publication of JPS5827341A publication Critical patent/JPS5827341A/ja
Publication of JPH038105B2 publication Critical patent/JPH038105B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0128—
    • H10W10/13—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP56126531A 1981-08-11 1981-08-11 半導体装置の製造方法 Granted JPS5827341A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56126531A JPS5827341A (ja) 1981-08-11 1981-08-11 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56126531A JPS5827341A (ja) 1981-08-11 1981-08-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5827341A true JPS5827341A (ja) 1983-02-18
JPH038105B2 JPH038105B2 (enExample) 1991-02-05

Family

ID=14937503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56126531A Granted JPS5827341A (ja) 1981-08-11 1981-08-11 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5827341A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780352A (en) * 1995-10-23 1998-07-14 Motorola, Inc. Method of forming an isolation oxide for silicon-on-insulator technology

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146186A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode device fabrication method
JPS55157258A (en) * 1979-05-25 1980-12-06 Raytheon Co Semiconductor device and method of fabricating same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146186A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode device fabrication method
JPS55157258A (en) * 1979-05-25 1980-12-06 Raytheon Co Semiconductor device and method of fabricating same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5780352A (en) * 1995-10-23 1998-07-14 Motorola, Inc. Method of forming an isolation oxide for silicon-on-insulator technology

Also Published As

Publication number Publication date
JPH038105B2 (enExample) 1991-02-05

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