JPS5827341A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS5827341A JPS5827341A JP56126531A JP12653181A JPS5827341A JP S5827341 A JPS5827341 A JP S5827341A JP 56126531 A JP56126531 A JP 56126531A JP 12653181 A JP12653181 A JP 12653181A JP S5827341 A JPS5827341 A JP S5827341A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- area
- mask
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76221—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO with a plurality of successive local oxidation steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56126531A JPS5827341A (ja) | 1981-08-11 | 1981-08-11 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56126531A JPS5827341A (ja) | 1981-08-11 | 1981-08-11 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5827341A true JPS5827341A (ja) | 1983-02-18 |
| JPH038105B2 JPH038105B2 (enrdf_load_stackoverflow) | 1991-02-05 |
Family
ID=14937503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56126531A Granted JPS5827341A (ja) | 1981-08-11 | 1981-08-11 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5827341A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780352A (en) * | 1995-10-23 | 1998-07-14 | Motorola, Inc. | Method of forming an isolation oxide for silicon-on-insulator technology |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146186A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode device fabrication method |
| JPS55157258A (en) * | 1979-05-25 | 1980-12-06 | Raytheon Co | Semiconductor device and method of fabricating same |
-
1981
- 1981-08-11 JP JP56126531A patent/JPS5827341A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146186A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Diode device fabrication method |
| JPS55157258A (en) * | 1979-05-25 | 1980-12-06 | Raytheon Co | Semiconductor device and method of fabricating same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5780352A (en) * | 1995-10-23 | 1998-07-14 | Motorola, Inc. | Method of forming an isolation oxide for silicon-on-insulator technology |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH038105B2 (enrdf_load_stackoverflow) | 1991-02-05 |
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