JPS582296A - エピタキシヤル単結晶及びこの製造方法 - Google Patents

エピタキシヤル単結晶及びこの製造方法

Info

Publication number
JPS582296A
JPS582296A JP57064844A JP6484482A JPS582296A JP S582296 A JPS582296 A JP S582296A JP 57064844 A JP57064844 A JP 57064844A JP 6484482 A JP6484482 A JP 6484482A JP S582296 A JPS582296 A JP S582296A
Authority
JP
Japan
Prior art keywords
substrate
sic
crystal
single crystal
crystals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57064844A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0353277B2 (enrdf_load_stackoverflow
Inventor
リチヤ−ド・フレデリツク・ラツツ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS582296A publication Critical patent/JPS582296A/ja
Publication of JPH0353277B2 publication Critical patent/JPH0353277B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP57064844A 1981-06-30 1982-04-20 エピタキシヤル単結晶及びこの製造方法 Granted JPS582296A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/280,145 US4382837A (en) 1981-06-30 1981-06-30 Epitaxial crystal fabrication of SiC:AlN
US280145 1981-06-30

Publications (2)

Publication Number Publication Date
JPS582296A true JPS582296A (ja) 1983-01-07
JPH0353277B2 JPH0353277B2 (enrdf_load_stackoverflow) 1991-08-14

Family

ID=23071874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57064844A Granted JPS582296A (ja) 1981-06-30 1982-04-20 エピタキシヤル単結晶及びこの製造方法

Country Status (5)

Country Link
US (1) US4382837A (enrdf_load_stackoverflow)
EP (1) EP0069206B1 (enrdf_load_stackoverflow)
JP (1) JPS582296A (enrdf_load_stackoverflow)
CA (1) CA1186599A (enrdf_load_stackoverflow)
DE (1) DE3265369D1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202398A (ja) * 1983-05-04 1984-11-16 Showa Alum Corp 熱交換器用アルミニウム製フイン

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4489128A (en) * 1981-06-30 1984-12-18 International Business Machines Corporation Structure containing epitaxial crystals on a substrate
JPS61291494A (ja) * 1985-06-19 1986-12-22 Sharp Corp 炭化珪素単結晶基板の製造方法
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures
US5334853A (en) * 1993-09-29 1994-08-02 The United States Of America As Represented By The Secretary Of The Navy Semiconductor cold electron emission device
US5725659A (en) * 1994-10-03 1998-03-10 Sepehry-Fard; Fareed Solid phase epitaxy reactor, the most cost effective GaAs epitaxial growth technology
RU2097452C1 (ru) * 1996-02-22 1997-11-27 Юрий Александрович Водаков Способ эпитаксиального выращивания монокристаллов нитридов металлов 3а группы химических элементов
US5954874A (en) * 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US5858086A (en) * 1996-10-17 1999-01-12 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride
KR100279737B1 (ko) * 1997-12-19 2001-02-01 정선종 전계방출소자와 광소자로 구성된 단파장 광전소자 및 그의 제작방법
US6045612A (en) * 1998-07-07 2000-04-04 Cree, Inc. Growth of bulk single crystals of aluminum nitride
KR100277691B1 (ko) * 1998-09-17 2001-02-01 정선종 단파장 광전소자 제조용 장치 및 그를 이용한 단파장 광전소자제조방법
US6063185A (en) * 1998-10-09 2000-05-16 Cree, Inc. Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy
US6086672A (en) * 1998-10-09 2000-07-11 Cree, Inc. Growth of bulk single crystals of aluminum nitride: silicon carbide alloys
RU2333300C2 (ru) * 2006-04-26 2008-09-10 Дагестанский государственный университет СПОСОБ ПОЛУЧЕНИЯ ЭПИТАКСИАЛЬНЫХ ПЛЕНОК РАСТВОРОВ (SiC)1-x(AlN)x
JP2009280484A (ja) * 2008-04-24 2009-12-03 Sumitomo Electric Ind Ltd Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
JP2009280903A (ja) * 2008-04-24 2009-12-03 Sumitomo Electric Ind Ltd Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
JP5621199B2 (ja) 2008-04-24 2014-11-05 住友電気工業株式会社 Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材の製造方法、エピタキシャルウエハの製造方法、Ｓｉ（１−ｖ−ｗ−ｘ）ＣｗＡｌｘＮｖ基材およびエピタキシャルウエハ
EP2410082B1 (en) * 2009-04-24 2015-12-16 National Institute of Advanced Industrial Science And Technology Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal
KR101338200B1 (ko) * 2011-11-30 2013-12-06 현대자동차주식회사 초임계 유체를 이용한 중공 탄소섬유의 제조방법

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3259509A (en) * 1962-01-26 1966-07-05 Allis Chalmers Mfg Co Refractory materials and method of making same
US3287478A (en) * 1964-10-30 1966-11-22 Allis Chalmers Mfg Co Method of sintering aluminum nitride refractories
US3470107A (en) * 1965-10-15 1969-09-30 Gen Electric Silicon carbide phosphors
NL6615059A (enrdf_load_stackoverflow) * 1966-10-25 1968-04-26
NL143436B (nl) * 1966-12-14 1974-10-15 Philips Nv Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
CA1139791A (en) * 1978-06-15 1983-01-18 Yorihiro Murata Sintered silicon carbide-aluminum nitride articles and method of making such articles
US4172754A (en) * 1978-07-17 1979-10-30 National Research Development Corporation Synthesis of aluminum nitride

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202398A (ja) * 1983-05-04 1984-11-16 Showa Alum Corp 熱交換器用アルミニウム製フイン

Also Published As

Publication number Publication date
EP0069206A1 (en) 1983-01-12
US4382837A (en) 1983-05-10
JPH0353277B2 (enrdf_load_stackoverflow) 1991-08-14
CA1186599A (en) 1985-05-07
DE3265369D1 (en) 1985-09-19
EP0069206B1 (en) 1985-08-14

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