JPS58222577A - 発光素子 - Google Patents

発光素子

Info

Publication number
JPS58222577A
JPS58222577A JP57104756A JP10475682A JPS58222577A JP S58222577 A JPS58222577 A JP S58222577A JP 57104756 A JP57104756 A JP 57104756A JP 10475682 A JP10475682 A JP 10475682A JP S58222577 A JPS58222577 A JP S58222577A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
conductivity
semiconductor
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57104756A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0423430B2 (enExample
Inventor
Toru Suzuki
徹 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57104756A priority Critical patent/JPS58222577A/ja
Publication of JPS58222577A publication Critical patent/JPS58222577A/ja
Publication of JPH0423430B2 publication Critical patent/JPH0423430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP57104756A 1982-06-18 1982-06-18 発光素子 Granted JPS58222577A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57104756A JPS58222577A (ja) 1982-06-18 1982-06-18 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57104756A JPS58222577A (ja) 1982-06-18 1982-06-18 発光素子

Publications (2)

Publication Number Publication Date
JPS58222577A true JPS58222577A (ja) 1983-12-24
JPH0423430B2 JPH0423430B2 (enExample) 1992-04-22

Family

ID=14389327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57104756A Granted JPS58222577A (ja) 1982-06-18 1982-06-18 発光素子

Country Status (1)

Country Link
JP (1) JPS58222577A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128785A (ja) * 1986-11-19 1988-06-01 Nec Corp 半導体発光素子
JPS649668A (en) * 1987-07-02 1989-01-12 Kokusai Denshin Denwa Co Ltd Infrared ray emitting element
JPH0513809A (ja) * 1991-07-03 1993-01-22 Nec Corp 半導体発光素子
JP2010087270A (ja) * 2008-09-30 2010-04-15 Shin Etsu Handotai Co Ltd 発光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596695A (en) * 1979-01-15 1980-07-23 Xerox Corp Injection type semiconductor laser

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5596695A (en) * 1979-01-15 1980-07-23 Xerox Corp Injection type semiconductor laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128785A (ja) * 1986-11-19 1988-06-01 Nec Corp 半導体発光素子
JPS649668A (en) * 1987-07-02 1989-01-12 Kokusai Denshin Denwa Co Ltd Infrared ray emitting element
JPH0513809A (ja) * 1991-07-03 1993-01-22 Nec Corp 半導体発光素子
JP2010087270A (ja) * 2008-09-30 2010-04-15 Shin Etsu Handotai Co Ltd 発光素子

Also Published As

Publication number Publication date
JPH0423430B2 (enExample) 1992-04-22

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