JPS58222559A - 注入形バイポ−ラ論理半導体集積回路 - Google Patents

注入形バイポ−ラ論理半導体集積回路

Info

Publication number
JPS58222559A
JPS58222559A JP57106061A JP10606182A JPS58222559A JP S58222559 A JPS58222559 A JP S58222559A JP 57106061 A JP57106061 A JP 57106061A JP 10606182 A JP10606182 A JP 10606182A JP S58222559 A JPS58222559 A JP S58222559A
Authority
JP
Japan
Prior art keywords
region
transistor
type
injection
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57106061A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0418473B2 (cg-RX-API-DMAC10.html
Inventor
Shoichi Nakagawa
正一 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP57106061A priority Critical patent/JPS58222559A/ja
Publication of JPS58222559A publication Critical patent/JPS58222559A/ja
Publication of JPH0418473B2 publication Critical patent/JPH0418473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/652—Integrated injection logic using vertical injector structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57106061A 1982-06-18 1982-06-18 注入形バイポ−ラ論理半導体集積回路 Granted JPS58222559A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57106061A JPS58222559A (ja) 1982-06-18 1982-06-18 注入形バイポ−ラ論理半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57106061A JPS58222559A (ja) 1982-06-18 1982-06-18 注入形バイポ−ラ論理半導体集積回路

Publications (2)

Publication Number Publication Date
JPS58222559A true JPS58222559A (ja) 1983-12-24
JPH0418473B2 JPH0418473B2 (cg-RX-API-DMAC10.html) 1992-03-27

Family

ID=14424094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57106061A Granted JPS58222559A (ja) 1982-06-18 1982-06-18 注入形バイポ−ラ論理半導体集積回路

Country Status (1)

Country Link
JP (1) JPS58222559A (cg-RX-API-DMAC10.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5340437A (en) * 1977-04-28 1978-04-13 Hitachi Heating Appliance Co Ltd Electronic range

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5340437A (en) * 1977-04-28 1978-04-13 Hitachi Heating Appliance Co Ltd Electronic range

Also Published As

Publication number Publication date
JPH0418473B2 (cg-RX-API-DMAC10.html) 1992-03-27

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