JPS58220106A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS58220106A
JPS58220106A JP57104318A JP10431882A JPS58220106A JP S58220106 A JPS58220106 A JP S58220106A JP 57104318 A JP57104318 A JP 57104318A JP 10431882 A JP10431882 A JP 10431882A JP S58220106 A JPS58220106 A JP S58220106A
Authority
JP
Japan
Prior art keywords
light
substrate
photoelectric conversion
solid
color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57104318A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0352602B2 (enrdf_load_stackoverflow
Inventor
Masaharu Imai
今井　正晴
Osamu Onizuka
修 鬼塚
Akimasa Morita
晃正 森田
Ikuo Toufukuji
東福寺　幾夫
Shunpei Tanaka
俊平 田中
Hiroshi Matsui
宏 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Corp
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Corp, Olympus Optical Co Ltd filed Critical Olympus Corp
Priority to JP57104318A priority Critical patent/JPS58220106A/ja
Publication of JPS58220106A publication Critical patent/JPS58220106A/ja
Publication of JPH0352602B2 publication Critical patent/JPH0352602B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors

Landscapes

  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
JP57104318A 1982-06-17 1982-06-17 固体撮像装置 Granted JPS58220106A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57104318A JPS58220106A (ja) 1982-06-17 1982-06-17 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57104318A JPS58220106A (ja) 1982-06-17 1982-06-17 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS58220106A true JPS58220106A (ja) 1983-12-21
JPH0352602B2 JPH0352602B2 (enrdf_load_stackoverflow) 1991-08-12

Family

ID=14377581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57104318A Granted JPS58220106A (ja) 1982-06-17 1982-06-17 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS58220106A (enrdf_load_stackoverflow)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992568A (ja) * 1982-11-18 1984-05-28 Mitsubishi Electric Corp 固体撮像素子などの受光装置とその製造方法
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
JPS6132469A (ja) * 1984-07-24 1986-02-15 Toppan Printing Co Ltd カラー固体撮像素子の製造方法
US4689652A (en) * 1984-03-12 1987-08-25 Hitachi, Ltd. Image sensor
JPS6362267A (ja) * 1986-09-02 1988-03-18 Nippon Sheet Glass Co Ltd レンズ付きモジユ−ルの製造方法
JPS63188102A (ja) * 1987-01-30 1988-08-03 Fujitsu Ltd カラ−固体撮像素子
JPS63291466A (ja) * 1987-05-25 1988-11-29 Nippon Sheet Glass Co Ltd 固体撮像装置
JPS6488501A (en) * 1987-09-30 1989-04-03 Nippon Sheet Glass Co Ltd Plane lens plate
JPS6491101A (en) * 1987-10-01 1989-04-10 Nippon Sheet Glass Co Ltd Plane lens plate
JPH0468570A (ja) * 1990-07-09 1992-03-04 Sharp Corp 固体撮像装置の製造方法
JPH0945885A (ja) * 1995-07-26 1997-02-14 Lg Semicon Co Ltd Ｃｃｄ固体撮像素子及びその製造方法
EP0795913A3 (enrdf_load_stackoverflow) * 1996-03-11 1997-10-29 Eastman Kodak Co
JP2012507458A (ja) * 2008-11-03 2012-03-29 サン−ゴバン グラス フランス イオン交換による集光領域を備えた板ガラス
WO2015011901A1 (ja) * 2013-07-24 2015-01-29 セイコーエプソン株式会社 カラーフィルター基板、電気光学装置および投射型表示装置
JP2016018986A (ja) * 2014-07-09 2016-02-01 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ イメージセンサおよびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57175356U (enrdf_load_stackoverflow) * 1981-04-30 1982-11-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57175356U (enrdf_load_stackoverflow) * 1981-04-30 1982-11-05

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5992568A (ja) * 1982-11-18 1984-05-28 Mitsubishi Electric Corp 固体撮像素子などの受光装置とその製造方法
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
US4689652A (en) * 1984-03-12 1987-08-25 Hitachi, Ltd. Image sensor
JPS6132469A (ja) * 1984-07-24 1986-02-15 Toppan Printing Co Ltd カラー固体撮像素子の製造方法
JPS6362267A (ja) * 1986-09-02 1988-03-18 Nippon Sheet Glass Co Ltd レンズ付きモジユ−ルの製造方法
JPS63188102A (ja) * 1987-01-30 1988-08-03 Fujitsu Ltd カラ−固体撮像素子
JPS63291466A (ja) * 1987-05-25 1988-11-29 Nippon Sheet Glass Co Ltd 固体撮像装置
JPS6488501A (en) * 1987-09-30 1989-04-03 Nippon Sheet Glass Co Ltd Plane lens plate
JPS6491101A (en) * 1987-10-01 1989-04-10 Nippon Sheet Glass Co Ltd Plane lens plate
JPH0468570A (ja) * 1990-07-09 1992-03-04 Sharp Corp 固体撮像装置の製造方法
JPH0945885A (ja) * 1995-07-26 1997-02-14 Lg Semicon Co Ltd Ｃｃｄ固体撮像素子及びその製造方法
EP0795913A3 (enrdf_load_stackoverflow) * 1996-03-11 1997-10-29 Eastman Kodak Co
JP2012507458A (ja) * 2008-11-03 2012-03-29 サン−ゴバン グラス フランス イオン交換による集光領域を備えた板ガラス
WO2015011901A1 (ja) * 2013-07-24 2015-01-29 セイコーエプソン株式会社 カラーフィルター基板、電気光学装置および投射型表示装置
JP2015025835A (ja) * 2013-07-24 2015-02-05 セイコーエプソン株式会社 カラーフィルター基板、電気光学装置、投射型表示装置およびカラーフィルター基板の製造方法
US9671640B2 (en) 2013-07-24 2017-06-06 Seiko Epson Corporation Color filter substrate, electro-optical device, and projection-type display device
JP2016018986A (ja) * 2014-07-09 2016-02-01 采▲ぎょく▼科技股▲ふん▼有限公司ＶｉｓＥｒａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｍｐａｎｙ Ｌｉｍｉｔｅｄ イメージセンサおよびその製造方法

Also Published As

Publication number Publication date
JPH0352602B2 (enrdf_load_stackoverflow) 1991-08-12

Similar Documents

Publication Publication Date Title
CN100365820C (zh) 固体摄像器件、固体摄像器件的制造方法、摄影机
JPS58220106A (ja) 固体撮像装置
US6301051B1 (en) High fill-factor microlens array and fabrication method
JP3079969B2 (ja) 完全密着型イメージセンサ及びその製造方法
US5593913A (en) Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization
US8325266B2 (en) Method of forming thin camera
CN100504505C (zh) 透镜阵列及其制作方法
US8675282B2 (en) Solid-state imaging device and method for manufacturing the same
KR100511543B1 (ko) 마이크로 렌즈 기판의 제작 방법 및 마이크로 렌즈 노광광학계
CN108352390B (zh) 固态成像器件及其制造方法
JPS6344624A (ja) 液晶デバイス
CN108269815A (zh) Cmos图像传感器及其形成方法
CN110349985B (zh) 图像传感器和制造图像传感器的方法
JPH0470601B2 (enrdf_load_stackoverflow)
JPH08313706A (ja) 遮光部一体型マイクロレンズアレイ及びその製造方法
CN100474603C (zh) Cmos图像传感器及其制造方法
JP2005079344A (ja) 固体撮像装置及びその製造方法
CN102290423B (zh) 图像传感器装置的制造方法
JPH03175403A (ja) 固体撮像装置
JP2678074B2 (ja) 固体撮像装置の製造方法
JP2006003869A (ja) イメージセンサのマイクロレンズ形成方法
JP2005142429A (ja) 固体撮像装置およびその製造方法
JPS59195861A (ja) 固体撮像装置の製造方法
JP2020113596A (ja) 固体撮像素子アレイ基板、及び位置精度検出方法、並びに固体撮像素子の製造方法
CN211718909U (zh) 微透镜阵列、生物识别模组及其电子设备