JPS5821887A - 半導体発光素子の製造方法 - Google Patents
半導体発光素子の製造方法Info
- Publication number
- JPS5821887A JPS5821887A JP12071581A JP12071581A JPS5821887A JP S5821887 A JPS5821887 A JP S5821887A JP 12071581 A JP12071581 A JP 12071581A JP 12071581 A JP12071581 A JP 12071581A JP S5821887 A JPS5821887 A JP S5821887A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- laser
- semiconductor layer
- layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 239000012535 impurity Substances 0.000 claims abstract description 9
- 230000005669 field effect Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 10
- 230000010355 oscillation Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241001482106 Alosa Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12071581A JPS5821887A (ja) | 1981-08-03 | 1981-08-03 | 半導体発光素子の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12071581A JPS5821887A (ja) | 1981-08-03 | 1981-08-03 | 半導体発光素子の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821887A true JPS5821887A (ja) | 1983-02-08 |
| JPS6237906B2 JPS6237906B2 (enrdf_load_stackoverflow) | 1987-08-14 |
Family
ID=14793202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12071581A Granted JPS5821887A (ja) | 1981-08-03 | 1981-08-03 | 半導体発光素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821887A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6077485A (ja) * | 1983-10-03 | 1985-05-02 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JPS61215234A (ja) * | 1985-03-22 | 1986-09-25 | Nippon Kogaku Kk <Nikon> | グラスアイオノマ−セメント用ガラス組成物 |
| US4766472A (en) * | 1986-01-06 | 1988-08-23 | Francois Brillouet | Monolithic semiconductor structure of a laser and a field effect transistor |
| US5202896A (en) * | 1991-07-16 | 1993-04-13 | The United States Of America As Represented By The Secretary Of The Air Force | Bipolar inversion channel field effect transistor laser |
| US6620861B1 (en) | 1999-11-17 | 2003-09-16 | Kabushiki Kaisha Shofu | Dental fillers |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55117295A (en) * | 1979-03-02 | 1980-09-09 | Hitachi Ltd | Semiconductor light emitting element and fabricating the same |
| JPS5670681A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Semiconductor luminous element |
-
1981
- 1981-08-03 JP JP12071581A patent/JPS5821887A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55117295A (en) * | 1979-03-02 | 1980-09-09 | Hitachi Ltd | Semiconductor light emitting element and fabricating the same |
| JPS5670681A (en) * | 1979-11-14 | 1981-06-12 | Hitachi Ltd | Semiconductor luminous element |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6077485A (ja) * | 1983-10-03 | 1985-05-02 | Mitsubishi Electric Corp | 半導体レ−ザ装置 |
| JPS61215234A (ja) * | 1985-03-22 | 1986-09-25 | Nippon Kogaku Kk <Nikon> | グラスアイオノマ−セメント用ガラス組成物 |
| US4766472A (en) * | 1986-01-06 | 1988-08-23 | Francois Brillouet | Monolithic semiconductor structure of a laser and a field effect transistor |
| US5202896A (en) * | 1991-07-16 | 1993-04-13 | The United States Of America As Represented By The Secretary Of The Air Force | Bipolar inversion channel field effect transistor laser |
| US6620861B1 (en) | 1999-11-17 | 2003-09-16 | Kabushiki Kaisha Shofu | Dental fillers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6237906B2 (enrdf_load_stackoverflow) | 1987-08-14 |
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