JPS6237906B2 - - Google Patents

Info

Publication number
JPS6237906B2
JPS6237906B2 JP56120715A JP12071581A JPS6237906B2 JP S6237906 B2 JPS6237906 B2 JP S6237906B2 JP 56120715 A JP56120715 A JP 56120715A JP 12071581 A JP12071581 A JP 12071581A JP S6237906 B2 JPS6237906 B2 JP S6237906B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
layer
forming
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56120715A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5821887A (ja
Inventor
Tadashi Fukuzawa
Hideaki Matsueda
Michiharu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP12071581A priority Critical patent/JPS5821887A/ja
Publication of JPS5821887A publication Critical patent/JPS5821887A/ja
Publication of JPS6237906B2 publication Critical patent/JPS6237906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
JP12071581A 1981-08-03 1981-08-03 半導体発光素子の製造方法 Granted JPS5821887A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12071581A JPS5821887A (ja) 1981-08-03 1981-08-03 半導体発光素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12071581A JPS5821887A (ja) 1981-08-03 1981-08-03 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5821887A JPS5821887A (ja) 1983-02-08
JPS6237906B2 true JPS6237906B2 (enrdf_load_stackoverflow) 1987-08-14

Family

ID=14793202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12071581A Granted JPS5821887A (ja) 1981-08-03 1981-08-03 半導体発光素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5821887A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6077485A (ja) * 1983-10-03 1985-05-02 Mitsubishi Electric Corp 半導体レ−ザ装置
JPH0672028B2 (ja) * 1985-03-22 1994-09-14 株式会社ニコン グラスアイオノマ−セメント用ガラス組成物
FR2592739B1 (fr) * 1986-01-06 1988-03-18 Brillouet Francois Structure semi-conductrice monolithique d'un laser et d'un transistor a effet de champ et son procede de fabrication
US5202896A (en) * 1991-07-16 1993-04-13 The United States Of America As Represented By The Secretary Of The Air Force Bipolar inversion channel field effect transistor laser
DE60032858T2 (de) 1999-11-17 2007-09-06 Kabushiki Kaisha Shofu Dentales Füllungsmaterial

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117295A (en) * 1979-03-02 1980-09-09 Hitachi Ltd Semiconductor light emitting element and fabricating the same
JPS5670681A (en) * 1979-11-14 1981-06-12 Hitachi Ltd Semiconductor luminous element

Also Published As

Publication number Publication date
JPS5821887A (ja) 1983-02-08

Similar Documents

Publication Publication Date Title
US4366567A (en) Semiconductor laser device
US4361887A (en) Semiconductor light emitting element
US4430741A (en) Semiconductor laser device
US4862474A (en) Semicondutor laser device
JPS6237906B2 (enrdf_load_stackoverflow)
US4829534A (en) Semiconductor laser device having a semiconductor region for creating a depletion layer in a laser active layer for controlling current flow therethrough
JPH04162689A (ja) 半導体発光装置の製造方法
JPS6140082A (ja) 半導体装置
US4858241A (en) Semiconductor laser device
JPS58200584A (ja) 半導体発光装置
JPH0582907A (ja) 半導体レーザアレイおよびその駆動方法
JPH0864899A (ja) 半導体レーザ装置の製造方法，および半導体レーザ装置
JPH023314B2 (enrdf_load_stackoverflow)
JP2517042B2 (ja) 光集積回路
JPS6126277A (ja) 光電子集積回路
JPS61204993A (ja) 半導体発光装置
JPS622719B2 (enrdf_load_stackoverflow)
JPH05121822A (ja) 半導体レーザ装置の製造方法
JPH067630B2 (ja) 三端子半導体レ−ザ装置
JPS63301583A (ja) 半導体発光素子
JPH0766993B2 (ja) 半導体光増幅素子
JPS58162091A (ja) 半導体レ−ザ素子及びその製造方法
JPH01196893A (ja) 光電子集積回路
JPS62244167A (ja) 光，電子半導体集積回路
JPS6045083A (ja) 平面型半導体レ−ザ集積回路装置