JPS58218173A - Bidirectional power high speed mosfet element - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention]

BACKGROUND OF THE INVENTION The present invention relates to a p-metal-oxide-semiconductor field effect transistor (MO3FLI) for power use. The above device exhibits switching speed, high voltage withstand performance and bidirectionality for AC circuits. Power MQS FET devices have high gate impedance, low on-resistance (and therefore low forward voltage drop). It has many advantageous properties, including high withstand voltage performance and fast switching speed.

[If it is, it is normal l) In synchronous rectifier circuit applications where elements such as N matching rectifiers, Schottky junction rectifiers, or bipolar 1 to transistor synchronous rectifiers have not been used previously, mino j, :1::1° MOS F-E I' elements can be used. Power MOS FET devices have several advantages over any of the above devices. For example, an N-junction rectifier has a relatively high self-weight pressure drop (above 0.75 V) and a relatively Slow switching speed to the right. Although the Schott-Key junction rectifier substantially solves the speed problem, it only slightly alleviates the dead weight drop problem. In fact, the self-weight pressure drop of a Schottky junction type silicon element subjected to a large current is about 0.5 V or more. Key junction type devices also generally lack reverse locking capability due to relatively large leakage currents in the reverse bias 111. In known power MOSFET structures, a large number of medium hills are formed on a single semiconductor wafer (generally on a single semiconductor wafer), where each device is 300 mils (0,3
It is customary to use Hirano's ＼J method, in which all cells in each element are electrically connected in parallel. A typical power MO8FEI has a double-diffused structure, which is similar to, for example, an N-type. A common drain region of the semi-central body is formed inside the train region, preferably by diffusion.Then, a base region of the shape of 1 is formed, preferably by diffusion. A source region is formed in the same manner as the drain region.The source region is N-type like the drain region.C on the surface of the device is a base region of P-type semiconductor material between the N-type source region and the drain region. A MO8FET gate insulating layer and a conductive gate electrode are arranged so as to cover the strip. During operation, an appropriate polarity (N-channel MOS
When a gate voltage (positive if I=E-r) is applied to the electrode, an electric field is generated that penetrates the gate insulating layer and spreads into the base region. As a result, a thin N-type conductive layer is induced just below the surface of the base region, thereby forming a continuous low-resistance N-type conductive layer between the source and drain regions.
A shaped electrocardial channel is formed. The actual source and train terminals consist of metal coatings placed on the upper and lower main surfaces of the device (the train terminal is common to all unit rails of the device). can be regarded as a vertical element. However, the current flows horizontally in the part C of the power channel 1/channel that is under the control of the gate electrode. In the case of the structure, the source, base and drain regions are parasitic bipolar transistors (respectively). When the bipolar transistor 1~ transistor becomes conductive, the blocking voltage J of the power MO8F-F-
3 and the turn-off speed is substantially reduced. MO for power
In order to prevent the parasitic bipolar transistor from becoming conductive during operation of the 8FEI, it is necessary to connect the layers constituting the source, base and base regions to each other using ohmic connections.
, t-(electrical short-circuit), tMOst E
It is customary to maintain a blocking voltage of 1 and a turn-on speed of 1. However, such short circuits limit the use of 4J elements in certain circuits. What?
! ', then in such an element structure, M OS
This is because an anomalous PN junction diode A-de connected directly between the main terminals (source J5 and drain terminals) of F E-1- is included in a wooden manner. For example, in the case of the J, N-type channel enhancement h type MOS F [E I structure outlined above,
A P-type base region forms a PN junction with the drain region of the device. The presence of the source-to-base short effectively connects the P-type base region electrically to the source terminal of the device. Of course, the N-type drain region is connected to the train terminal of the device. As a result, the anode becomes MOS I-E I
There is now a parasitic PN-junction diode connected to the source terminal of MO8FEI- and whose cathode is connected to the drain terminal of MO8FEI-. During normal operation of an N-channel MO8F in an electrical circuit, the drain terminal is positively biased with respect to the source terminal. Regarding the MOSFET of Enhancement Type 6, when no current is applied, the MOSFET is in a static state, and therefore there is almost no current between the C source terminal and the train terminal. flows 4r.When a voltage is applied to the positive G1, the J,C element is turned on.If the IC is N-type channel is induced, and there is an element between the source and drain terminals. A continuous N-type conductive path is formed through C. Under these circumstances, C does not have any effect because the parasitic diode consisting of base d3 and drain region is always reverse biased. Wt5, the cathode of the tie Δ-de (drain region of MO8Ft1) is connected to die A
- anode (MOSF E l' (7)), a3
J, hysose region). However, if the polarity of the voltage applied between the source and train terminals is reversed, thereby forward biasing the diode consisting of C base + I5 and the drain region, then (as is obvious to those skilled in the art) If the voltage is higher than about 0.6 V, which corresponds to the curvature of the diode's forward conduction curve, then there is no gate voltage (-) and current conduction occurs through the element. is, in fact, M
The OS F, E1 lines form a short circuit to the opposite supply voltage. As a result of the known characteristics of conventional MO3F devices, it is not easy to use them in certain types of circuits (particularly AC circuits). MO8F transistor that C also operates for supply voltage of either polarity.
If such elements exist, it is conceivable that they would be extremely useful in actual circuit applications. Therefore, one of the objects of the present invention is to During the high-speed switching operation of F El, the operation of internal parasitic elements such as bipolar transistors is suppressed, and moreover, the supply type F The object of the present invention is to provide a power 111 MOS FET element which exhibits a property of being able to operate even when [is applied to it]. It is also an object of the present invention to provide a power MOSFET device that can be completely controlled.
Directional power MOS devices with the same on-resistance and switching degree (showing perfect symmetry)
It is also an object of the present invention to provide a 1-element. According to the first feature of this invention (simplified explanation), as a result of dividing the number of cores in the conventional MOSFET by dividing the number of cores by 1 (1), J5 is connected to the power MOSFET (effectively connected between the source terminal and the drain terminal)! The parasitic P-N junction type diode is eliminated. There is a set of 'Ctc9.υ that has been used so far, and 4
In order to suppress the operation of the parasitic piponilla transistor in a low state, there is a 11J coupling region inside the MOS F++ 1 which gives a relatively short lifetime to the excess majority carrier A7. Includes. According to one embodiment, such a recombination region is formed within the Z-space region. As will be appreciated by those skilled in the art, normal operation of a bipolar transistor requires that excess carriers in the base region provide a long lifetime. For example, N I'
) During normal operation of the N-type bipolar 1 transistor, electrons are injected across the space charge layer of the emitter into the C base region. Most of these electrons are located in the base region, where the majority of the electrons are located.
It crosses the base region and flows into the lucta region without recombining with (holes). However, some recombination does occur and a continuous supply of majority carriers (holes) in the base region is necessary to maintain current conduction through the device. If, as in the case of the present invention, the total number of multiple carry rods 7 in the C base region is limited, for example as a result of short life, the operation of the NPN bipolar transistors 1 to transistors is suppressed. In short, does the invention eliminate parasitic bipolar transistors rather than covering them with conductive poles? tJs
It is an attempt to change it to a small element. ,・ □ Particularly important ob? When the E1 element is turned off, majority carriers (holes) tend to be generated in the base region due to the electron avalanche phenomenon and the sudden and drastic change in voltage between the source terminal, drain terminal, etc. Even in this case, the lifespan can be shortened to 11 minutes (in other words, the desired M
According to the 115 culm degree of turn 37 hours of II+ element), those large numbers of holes are annihilated (and become electrons) at substantially the same rate as /1- are created. r
l + Nr1). Any suitable means known to those skilled in the art may be used to shorten the lifetime of d in the I[J bond region. One of the common measures is to introduce deep quasi-11′) impurities (
For example, adding gold or platinum). Another common approach is to use radiation damage to avoid creating defects in the crystal lattice structure of silicon at 1,-). In either case, the electrocardiogram shape and concentration, of which only the lifespan of the majority 2 I t \ \ \ \ , change, actually change r1 and become C □ . According to the second feature of the invention -)'C Briefly stated -3
9 conductivity type (for example, N type) and includes a pair of main terminal regions and a semiconductor base region of opposite conductivity type separating them;
C defined MOS l-E 'l chitunnel surface,
In J5C, the base region is between the main terminal regions (this is a strip of opposite conductivity type, and C exists in the 4-wire bidirectional power i).
MOS F L: l-element is provided. Such an element is preferably a perfectly symmetrical Schiller element constructed by diffusion techniques. In particular, the base region is spaced very far to the right of the principal surface. The main terminal area is formed inside the base area and has a small lateral internal floor and depth.
There is. Further, the main terminal region has an outer circumferential surface having an end within the main surface. MOS F E] On the channel surface, Goo 1 ~ insulating layer is arranged so as to cover the base region, and a conductive Goo mill electrode is placed on Goo 1 ~ insulating layer. As a result, Goo 1 ~ voltage When is applied, a conductive channel extending between the main terminal regions will be induced. The recombination region contained within the base region located between the main terminal regions provides a relatively short lifetime to the majority carriers 17 in the base region, thereby increasing the concentration of the majority carriers ~7. Excessive size is prevented. As a result, parasitic bipolar I-N transistor operation in the main terminal region and base region is suppressed, and the power MO8
When turning A of the t-F+ element T, a rapid turn A of the element is achieved by rapid recombination of an excess of multiple kisses in the l\- space region. Such a suitable 4j Sileno type (Z4 structure lifting platform, I11 polymer chain region (,
It is formed to extend to a depth e that is at least approximately the depth of one main terminal region. In accordance with another embodiment of the present invention, a bidirectional and symmetrical power MOS 1-IE element consisting of a semiconductor substrate (including an intermediate terminal region of one conductivity type in the cylinder) is provided. Such an intermediate terminal region almost corresponds to the drain region of a conventional vertical power MO3ILI with a double diffusion structure (with the main surface facing to the right). A pair of mutually spaced base regions having opposite conductivity types and having a lateral internal burnout a3 and depth smaller than that of the base region are formed □7:1°, and then their The base region has an outer circumferential surface with a terminal end in the main surface.In the base region, one conductivity type listed in 1 is connected to a pair of main terminals F, ji M.
are formed respectively. Each of the main terminal regions has an outer peripheral surface having one end in the main surface and spaced inwardly of the outer peripheral surface of the corresponding base region, so that (I
:li (G,!), the base region exists as a strip of opposite conductivity type between the corresponding main terminal region and intermediate terminal region. An ohmic short circuit is formed between each main terminal region, its corresponding base region, and the intermediate terminal region as a parasitic bipolar transistor, resulting in -C operation. A 1tJ coupling region is contained within the intermediate terminal region between the base regions I(I) and extends to a depth at least approximating the depth of the base region. This recombination region is the majority carrier A7 in the intermediate terminal region.
, which gives a relatively short life span to v , h c , h vv , and prevents overheating by 11 degrees. As a result, since the base region J3 and the intermediate terminal region separated from each other are suppressed from operating as parasitic bibolar transistors, the excessive number of transistors in the intermediate terminal region J is rapidly reduced. LL, 11j coupled, so MO8 for 4 power
Upon turn-off of lil element f, a rapid turn A will be achieved. The novel features of the disclosed invention are shown in detail in the claims. C-Ni will be better understood by reading the following detailed description given in conjunction with the drawings.
The S F E l element is an N type channel M OS I- which connects the source and drain regions of the N type silicon conductor and the base region of the 1) type silicon conductor.
E1'BengzidoshiC is described. However, it is of course possible for all active regions to have conductivity types opposite to those described. For the record, it is preferred that the particular devices described herein are fabricated by the Brass diffusion technique - CWA; however - any other device structure (e.g. It is understood that devices having a V-MO8 type element (Suzukuri) are also encompassed within the scope of the present invention. Turning first to FIG. 1, 1) a base region 12 of the shape and a major surface 14. A bidirectional and symmetrical power MO3F element 10 is shown formed on a semiconductor substrate with a smaller lateral self-containing structure inside the base region 12. A pair of closely spaced N+ type main terminal regions 16 and 18 are formed having a depth and depth. As a result, a part of the base region 12 is separated from the main terminal region 16 (both of which are N" shaped), and a strip-shaped portion 24 of the shape C exists between the main terminal regions 16 and 18 of the main surface 14. Main terminal area 1 [
A pair of main terminal electrodes 26d3 and 28 made of a metal film are in ohmic contact with 16a3 and 1ε3, respectively.
and are connected to main terminals 30, J and 32 of the element, respectively. In order to complete the basic structure of the MOS element, the main surface 1
A gate insulating layer 34 (made of silicon dioxide, for example) is disposed on the band 4-F so as to cover the strip 24, and at least a horizontal The vapor-deposited aluminum lamina/S is doped with Takabuchi's impurities, so that it covers the strip 24 of the base region along the direction of the base region. A gate electrode 36 of conductive conductor 111 (consisting of 21 electrodes) is arranged 8-C. The electrode '36 is connected to the gate terminal 38 of the element.
The basic MO81-1 of the horn-type MOS "[l element b< will be specified. It was described here]:
, To describe the operation of the I element in detail, when a positive Goo 1 to voltage is applied to the gate electrode 36, Goo 1 to the insulating layer 3
4 through you, an electric field is generated that spreads inside the l\-Sugi Castle 12. As a result, '4. ．． ．． -1- Insulating layer 34 J>
and the main surface 1 placed below the gate conductor 4fi36.
A thin inversion layer (N''-type electric current channel) is induced directly under the N1 type main terminal region 16 and the N1 type I7 channel. A conductive path is formed between positive goo 1 and no voltage applied.
If it is, there is no inversion layer μ, and therefore C-symmetrical main terminal region 1
The portion of the base region 12 located between 6 and 18 constitutes a blocking region. As can be seen from FIG. 1, element 1o is -C perfectly symmetrical with respect to main terminal regions 16 and 1B, and therefore -C is also perfectly symmetrical with respect to main terminals 30 and 32 of the C element. The element r1o has the main terminal region 16 or 18 and the base region w.
Since it does not include any ohmic short circuit between it and t12,
It is suitable for bidirectional operation. In other words, it is possible to apply operating voltages of both polarities between the main terminals 30 and 32 of the element 1o. Member with nomenclature regarding FET-
In order to maintain the
D) It is called the N-terminal, and the terminal 32 is called the drain/source (D/S) terminal. In other words, as can be seen by referring to the circuit shown in Fig. 2 (1), when terminal 1: child 32 is -C positive □ with respect to terminal 3o, terminals -i', , 30 are connected to MOS. , the terminal 32 is considered as the source terminal of E1 and the terminal 32 is considered as the source terminal of E1.
It can be viewed as a drop-in terminal for 'r. Conversely, if the terminal 30 is right with respect to the terminal 32, the terminal 3O is not considered to be the drain terminal and the terminal 32 is normal.
It can be seen as a source terminal. There is no direct electrical connection to the base region 1 or 12. The element structure in Figure 1 (this is
1] There are N-junction diodes A-, and these diodes are C-f in FIG.
2 and C are shown. The diode 40 has an N''-shaped main terminal region 16 constituting the cathode region of the diode and a base region 1 of the 1-) shape constituting the anode region of the diode.
2 formed by C. Similarly, the diode 42 is
N+ type main terminal area 1 that constitutes the cathode area of the diode
8djJ, and the base region 12 constituting the anode region of the diode.
Base region 12 includes both parasitic diodes 40 and 42
It constitutes the anode of C. During operation of the element 10, C is a strange die A-40 J>
and 42 do not form a short circuit between the source terminal and the train terminal of device 10. This is because these diodes are connected back to back and are not in the interrogation state at the same time. As shown in FIG. 16, base region 12 and main terminal region 18 are parasitic N 11
N-type bipolar transistor 1-mitter, base a3
In order to prevent the collector, base and collector regions of the NPN bipolar transistor 1 to act on the collector, base and collector regions, respectively, the main terminal Between the regions 16J3 and 18, a recombination region 44 is included within the base region 12. The recombination region 44 extends from the main surface 14 to the main terminal region 16, as shown by a broken line 46. and extends to a depth at least approximating the depth of 18 (if the depths of the main terminal regions are unequal, then
At the position of area A, the recombination area may extend to a depth that is at least close to the depth of the adjacent main terminal area. ) recombination region. The recombination center within 44 is indicated by an X. These recombination centers are composed of deep unit impurity atomic holes such as gold and platinum (C1:1J), or J,C series-1 (21') conductors due to damage to the old copper wire. -C which is made up of defects generated in the crystal lattice 811 iM is also good. As a result of f, the III binding region/I4 is the base region multi@
It gives a relatively short centering direction to the A current (holes on the platform of the P type base region 12), and therefore gives a relatively short center direction to the A current
In order to prevent the concentration of 1. In history, electric power M
At the time of turn Δ of OS F1 element 10, the electron avalanche decreases and the base formed by 'C/IE' is caused by the gradual increase of the voltage between the main terminal area bib' 16 d3 J and 1B. Excess majority carries in the region are rapidly combined with lj or annihilated. , □□, yo-) -U i 71 cal)
□・1(7) i'B iI tl, -ao, ga):i
'ro is achieved. :,ll'l'i. To achieve rapid turn-on of the device, it is necessary that the lifetime of the multi-key Al in the bond region 44 be on the order of 115 times the desired turn-off time. For example, in order to avoid turning on the MOS F E 'I device 10 in 50 nanoseconds, the lifetime within the recombination region 44 must be reduced to less than 10 nanoseconds. In order to obtain an extremely high speed device, it is also intended to reduce the lifetime in the recombination region 44 by as little as 1 nanosecond. To adjust the lifetime of the IC to a desired level, heavy metals such as gold or platinum may be added, or radiation such as electron beams or gamma rays may be used. Regarding the operation, the element 10 of FIGS. 1 and 2
The electrical conductivity between the main terminal regions 16 and 18 of is controlled by applying a voltage of either polarity to the terminal 38. The element 10 is turned on and turned off at any point during the AC cycle, regardless of the polarity to the element.
IC...! 6', ' *-Fl 0 'i' * '
93+j3 V ftiI k:,<,, 1. :・7- It is sufficient that the voltage applied to the l-terminal 38 is not positive to any of the main terminals 30 and 1 and 32. Also, the element 10 is in a conductive state.
□Apply a voltage of 1 to 1 to 1 to 1 which stops at the negative side terminal behind the main terminals 30 and 32. Element 10 in the figure is /J Mukaitake']
Although the MO3fL-1 element for electric horns is symmetrical, the blocking area in the base area 12 is completely limited to one terminal area 1.
The fact that the distance between CJ and B, located between G and 18, corresponds to the quality of the N-type electromagnetic wave induced during conduction of the element can also be disadvantageous. In other words, in order to obtain the desired withstand voltage performance, the distance between the main terminal regions 16J and 18 must be made as small as 11 minutes. (If you fill it up, the MO8F-El channel region located at the lower corner of 36 will be excessively 4f.) Next, looking at Figures 343 and 4, another real 11! Bidirectional and symmetrical power MOS l- based on the i aspect
The element 50 is made smaller in size, which eliminates the above-mentioned drawbacks of the elements in FIGS. 143 and 2.
It can be seen that the drain regions 56 are formed so that the drain regions 56 and 54 are symmetrically arranged back to back. Note that the drain region 5G serves as an intermediate terminal region and has 1. No terminals are connected to white junctions.
Each of the O8FET unit cells 52 J-3 and 54 is constructed in accordance with the known art related to power MO8F E1 devices as outlined above (with an ohmic short between the source region and the base region). In more detail), inside the N-shaped intermediate terminal area 5/6, there is a pair of U holes with smaller lateral openings and depth. P-shaped base regions 58 and 60 spaced apart are formed in 3.1 correspondence with the two unit cells 52 and 54. The base regions 58 and 60 have outer peripheries 62 and 64, respectively, which terminate in the major plane of the intermediate terminal region. A pair of main terminal regions 66J3 and 67 are formed within the base regions 58 and 60, each of which is a conventional double diffused vertical power terminal. This almost corresponds to the source region of the MOS FET. However, a notable difference is that the main terminal regions 66 and 67 are intersected and connected to the main terminals 70 and 71 of the device, and the metal-coated electrical terminals 66 and 67 are separately connected. (In the conventional power MOS F L'I, C is the main terminal area where the electrodes 68 and 691ii1', 1 are electrically connected to constitute the source terminal of A-). Each of 66J3 and 67 is of Nl type C
The base area b 8 (13J, and the outer circumferential surface 6 of 60
As a result of adding +JCJ to the outer circumferential surfaces 72 and 73, which are located at a distance inside the base regions 2 and 64, respectively, the main terminal regions 66 and 67 corresponding to the base regions 8 and 60 are formed within the main surface 65. A strip of opposite electrocardiogram shape is formed between the terminal area and the intermediate terminal area [56]. In this J, U4F Kakuzo's lifting platform, the main terminal area 66 or j is 67, the base area llA38 is 6,0, and the area 5 at the middle end (5 is a pair of paranormal N r) N-type bipolar...'llr'l,'v,indister'-
It can be seen that this corresponds to the mitta, base, and lucta regions 1i, respectively. Furthermore, these regions are located between the main terminal electrodes 68 and 69 (~78J).
P N l) It can also be seen that the N-type five-layer switching element I [defines the relay resistor. Since parasitic resistors tend to be latched conductive, M in FIG.
OS l=E 'T' Its effect on the operation of the device may be more detrimental than the effect of the parasitic bipolar transistor. In order to suppress the operation of parasitic bipolar transistors or parasitic iris transistors such as those shown in FIG. 60, a pair of A-me short assembly parts 74d3 and 75 are formed between them. Takes: t-
1, s short-circuit portions 74 and 75 may be formed by any desired method. FIG. 3 illustrates the usual method of formation, in which the extensions 7, . 1
1° 68 and 69 respectively, resulting in main terminal areas 66 and 67 (ohmic contact, respectively).
11 touches C. To form the extensions 76 and 7B, as is conventional, first active, pig-shaped impurities are diffused into the intermediate terminal region 56, the (1)-shaped base regions 58C3 and (J0) are formed, and the extensions are formed. A small slip (small t!f in the figure) for diffusion is placed on the surface 655F of C5 at the positions of portions 76, 78, and 78, and the impurities of type 1 and no are diffused. It is sufficient to form the main end r regions 66J5 and 67 of the U N+ shape, and then remove the slips 1 to 1 for the diffusion mask. It is also possible to use different types of ohmic short circuits 7'l and 7F).
and 67 respectively.
It is possible to use a microphone [1A11E spike (mlCr0al IOV Sp!ke) that reaches within 60 and 60 minutes respectively. Alternatively, the main terminal area 66
Pass through J3 and 67 respectively - CC pace bi58
and 60 are formed by V-shaped grooves selectively extending into each other, and are then brought into ohmic contact with the regions of both C and fj of the main terminal regions 68 and 69 of the metal coating.
may be formed inside the V-shaped groove respectively a) o These 2
One method is a self-aligned power source with an integrated source-to-base short circuit, filed on January 4, 1982 and assigned to the same assignee as the present invention.
08FL-] and C.
There is. To complete the structure of the MOSFl yaw 1-rels 52 and 54, insulating layers 80 and 82 are disposed on the main surface 65 to cover the strips of the base region, respectively. I [Conductive gate electrodes 84 and 86 are disposed on the gate insulating layers 80 and 82, respectively, so as to cover the strip-shaped portion of the base region. The conductive electrodes 1 to 86 are electrically connected to a common gate terminal 88 . As can be seen from FIG. 3, the base region 58, intermediate terminal region 56, and base region b:i! 60 is parasitic P. N+) type bipolar transistor is constructed, and when it operates, the characteristics of the power MOS E I=T element 50 (particularly the turn Δ speed) are low. On top of that,
Such a bizarre 1. ) The N P type bipone 1 to the transistor may be connected to the main terminal region 66 or 67 to form an R (N r3 N +) type four-layer switching element, but this is in the on state or A: 4eL may be latched in the conductive state.In order to suppress the operation of these parasitic elements, the base region 5E') is spaced very far apart.
, and 60 (inside the intermediate terminal area 56, there is a recombination pad 1 or 9 that is almost equivalent to the recombination pad 1t44 in FIG. 1).
0 is formed and C is present. Such 111 bonding region 90 extends to a depth that at least approximates the depth of base regions 5) 8 and 60, as indicated by dashed line 92. The 714 bond centers within the recombination region 90 are indicated by the X's. The recombination region 90 is - for a large number of intermediate terminal regions A7 (electrons in this case).
(It has a relatively short lifespan, and is used in large numbers.) It is useful for preventing people from becoming ill. As a result, the structure is similar to the case described in -1-.
8 and 60 and the intermediate terminal region 56 are suppressed from moving due to the parasitic bipolar transistor 1 to transistor. This also suppresses the N P N r) type four-layer switching element q) #JJ production as described above. As can be seen from the electrical equivalent circuit of FIG. 4, the device structure of FIG. 3 includes a pair of parasitic F)N junction diodes 94 and 96. As in the equivalent circuit of FIG. 2, these diodes 94 and 96 are connected back to back U. As a result, since both diodes are never rendered conductive at the same time, the device can operate regardless of the polarity of the low voltage applied between the main terminals 70 and 71. Specifically, the diode 94 is formed by a square-shaped base region 58 and an N-shaped intermediate terminal region 56, which define the anode and cathode regions of the diode. Similarly, J':1, the diode 96 is formed by the 1-] type base region 60 and the Nj← intermediate terminal region 56. In this way, the intermediate terminal region 56 is
A common cathode region is provided for natural PN junction diodes 94 and 96. The source-base knowledge assembly section 74 of M OS 1-[-"Lulu 52J3 and 7) 4 during the completion of FIG. 3
i15 J, and 75) are the conductor 98 J5 in Fig. 4.
and 100 (respectively. If the terminal area is parasitic bipolar 1 to transistor 2 (prevents operation)
It will help you. In addition, the recombination region 90 prevents the recombination of excess electrons that may exist in this region, so that the two base regions 58 and 60 and the intermediate end f region 5) 6 have a parasitic 1. ) N l''-type bipolar l-run raster. As a result, the element 50 of FIG. The switching element operates as a symmetrical switching element such that the conductivity of the element is effectively controlled by the gate terminal 88 of the element.
Any MOSFET as long as the voltage applied to it is more negative than the negative side applied to either main terminal of element -f.
- channel V channel is also brought into conduction, and back-to-back diodes 9/I and 96 cause J5
Current conduction in Rurusonohaku is also prevented. . Goo 1 end j'
The voltage applied to 88 is sufficiently kW in the positive h direction.
If u Q, the element 50 is in a conductive state. Finally, FIG. 5 shows an embodiment based on the more general idea of the invention. Illustrated 1 = MO8FET for power
- Element 110 exhibits tridirectionality 4 but no symmetry. As such, the asymmetric element 110 of FIG. 5 is substantially equivalent to the symmetric element 10 of FIG. Overall,
The device 110 in FIG. 5 is a vertical power MO with a double diffusion structure.
S F [Similar to T element, but instead of having a source-base short circuit, there is a recombination region 1 in the base region.
44 is included. More specifically, device 110 includes a P-type base region 112 between a drain region 118 forming its body and an N4-type source region 116 diffused therein. The drain region 118 is formed at the base 119 of the N1 type by, for example, single-bit axial growth. The base &119 is connected to the terminal 132 of the element, but this main information r serves as the train 2/source end]'.The other 41-1 components of element r110 are the C. in the figure roughly corresponds to the components of the element 10 in FIG.
The reference numerals in Figure 1 plus 100 (
It is represented. The above describes a MO8FEI element for electric power which is oriented to suppress the operation of internal parasitic elements such as bipolar transistors. Such devices exhibit symmetry, so that the withstand voltage, on-resistance, and switching speed are the same for either polarity of operation. It is possible to completely control the conductivity of the element regardless of polarity. :. Specific embodiments of the invention are described herein, 2o
stomach. 81. -□1. %. Number 'j''', 1, <,,)□
1. It will be obvious to those skilled in the art that this is possible. It is therefore to be understood that the appended claims are intended to cover all such variations insofar as they do not depart from the spirit and scope of the invention.

[Brief explanation of the drawing]

1 is a side sectional view of a bidirectional and symmetrical power Mo5t-11 device according to one embodiment of the present invention; FIG. 2 is a schematic diagram showing the electrical equivalent circuit of the device of FIG. 1; 3 shows a bidirectional and symmetrical power MO8FE'l-device according to another embodiment of the invention; 1 shows a side sectional view; FIG. 4 shows an electrical equivalent circuit of the device of FIG.゛Schematic diagram, number 5
The figure shows a bidirectional and asymmetric power MO according to the present invention.
FIG. 8 is a side cross-sectional view of an 8FLR element. In the figure, 10 is a power MO8 based on an embodiment of the present invention.
FEr element, 12 is a base region, 14 is a main surface, 16 and 18 are main terminal regions, 20 and 22''L% circumferential surface.
2. Rainbow υ1 band-shaped part 26o, , L (728t is the main terminal electrode, 30o, , , and 32 are the main terminals, 34 is the goo 1 insulating layer, 36 is the conductive gate electrode, 38 is the
1 gate 1~terminal, 44 is a C coupling region, 50 is a power MO3FET element based on another embodiment of the present invention, 5)
2 and 51 are middle rel, 56 is middle end r region, 5)E
) and 00 are the base area, (52 and (34 are the outer peripheral surfaces of the base area, 66 and 67 are the main terminal areas, 6ε3
Jj J, and 60 are 31-÷i1: child electrode, 70 J
j and 71 are the main D device J', 72Ji and 73 are the outer peripheral surfaces of the main terminal area, 74 and 75 are ohmic short circuit parts, and 76a
3 and 78 are extensions of the base region, 80 (I: i and 82 are the insulating layer, 84 and 86 are the conductive electrodes, and 833 is the goo mill terminal. Applicant General Satoshiku 1 ~ Rick Kanbanyi Attorney (7)
630) Raw Numa Virtue Neem Sword Da”l I Futari) 9 -f7 Mutual 7/7

Claims (1)

[Scope of Claims] 1. (1) A semiconductor root having a main surface and including a pair of monoelectrically shaped main screw-f regions extending inward from the 1-plane; (1) ) a pair of main terminal electrodes in contact with each of the main terminal regions; (C,) a semiconductor base region of opposite conductivity type separating the main terminal regions;
a base region (+j) configured to form, under the action of an electric field, an inversion layer consisting of a strip of the - conductivity type extending between the main terminal regions while being adjacent to the front hd+ surface;
+iii. Goo 1 to insulating layer disposed on the main surface in the manner of the band-shaped recording part; (e) conductive Goo 1 to electrode disposed on the gate insulating layer; and (r)'
+'+: A bonding region included inside the base region between the iHa main terminal regions, which has a relatively short lifespan with respect to the plurality of contacts in the base region. As a result of preventing the concentration of multiple rays in the recombination region from becoming excessive, the main terminal region and the base region are prevented from acting as parasitic bipolar transistors, and the turn A of the device is also suppressed.
) Bidirectional power MOS F E sometimes characterized by comprising elements of a recombination region that serve to rapidly recombine excess majority carriers in the base region.
T element. 2. The recombination region at the position of each of the main terminal regions is at least approximate to the depth of the adjacent main terminal region from the main surface and extends to a depth of 7j. M, 08 FET element for power. 3. The MO8FET for power according to claim 2, wherein the recombination region contains impurities at a deep level, thereby imparting a relatively short lifetime to majority carriers in the base region. 4. The power MOSFET E-1 device according to claim 3, wherein the deep level impurity is one selected from the group consisting of gold and platinum. 5. Due to radiation damage in the recombination region, a large number of the pace regions have a relatively short lifespan.1. 'l 1illi search range 2nd
The power MOSFET E-1 element described by J.R.J. 6. (a) A semiconductor substrate having a main surface and including a space region of one conductivity type, (b) before, i[! A pair of diagonally spaced one-terminal regions of opposite conductivity type formed inside the mace to approximately the same depth and having smaller lateral extension and depth than the base region. The main terminal area has an outer circumferential surface with an end within the main surface.
; In the main surface, a part of the base region under the action of the electric field exists as a band-shaped portion of the opposite conductivity type extending between the main terminal regions; (C) a pair of main terminal electrodes □ in ohmic contact with each of the main terminal regions;
゜□, 1,3 months], ses□, )? . )7,,＜
. , a conductive gate electrode disposed on the gate insulating layer, and (f) a conductive gate electrode covering the base region along the 5th direction; a recombination region that is contained inside the base region and extends to a depth at least approximating the depth of the main terminal region, and has a relatively short life (=J given) with respect to the multiple sharpness λ7 of the base region. As a result, the main terminal region J3 and the base region operate as a parasitic bipolar transistor as a result of preventing the concentration of the majority carry V from becoming excessive in the coupling region by The base 'sAI! ! Bidirectional and symmetrical power MO8F characterized by consisting of recombination region elements that serve to rapidly recombine excess majority carriers within
El-element. 7. The power M according to claim 6':1, wherein the majority carriers in the base region have a relatively short life due to radiation damage in the recombination region 8. OsF,, E 1-element. 8. The power recited in claim 6, in which the majority carriers in the base region have a relatively short lifetime (=J) because the recombination region contains deep-level impurities. 9. The power MO8II+ element according to claim 8, in which the deep level impurity is gold. 10. The power MO8II+ element according to claim 8, in which the deep level impurity is platinum C. MO8) L element for power according to scope 8. 11. (a) A semiconductor substrate having a main surface and including an intermediate terminal region of one conductivity type, (b) Inside of the intermediate terminal region. The outer circumferential surface of the outer circumferential surface having a termination in the main surface is formed with a diameter of 1λ·1 and has a depth smaller than the intermediate terminal area. (C) a pair of main terminal regions of the negative conductivity type formed inside each of the base regions; C having an in-plane end and spaced apart inside the outer circumferential surface of the corresponding base region;
The opposite conductivity spreads between the main terminal region and the intermediate terminal region to which a portion of each base region corresponds under the action of the C electric field in the main surface. (d) each main terminal region is formed between each said main terminal region and the corresponding base region, preferably each said main terminal region; , corresponding to the base region and the intermediate terminal region lJ<, a pair of ohmic shorts serving to suppress parasitic bipolar C operation, ((1) each strip of the base region a gate insulating layer disposed on the main surface, (e)
(c) a conductive gate electrode disposed on each of the gate insulating layers so as to cover each strip of the base region along the lateral direction; and (f) the intermediate terminal region between the base regions. C1 is a recombination region contained within the recombination region C1 by giving a relatively short life to the majority carry V in the intermediate terminal region. As a result of preventing the concentration of A7 from becoming excessive, the base region A5 and the intermediate terminal region are formed as a parasitic bipolar transistor.
The recombination region consists of elements that serve to suppress the occurrence of oxidation and also to rapidly recombine excess multi-chip carriers in the intermediate terminal region upon turn-off of the device.
h 'fi Dori Knee Ij Mukaitake and symmetrical power M
O3Fli: Tif. 12. At the position of each base π1 region, the recombination region extends to a depth at least approximate to the depth of the adjacent base region of the main surface. 13. By causing the angular coupling region to trap deep level impurities, the majority carrier A7 in the intermediate terminal region has a relatively short lifetime. 14. The power MOS transistor according to claim 11. 14. The deep level impurity is one member selected from the group consisting of gold J5 and platinum. No. 13 described in No. 11 M O8-1-[Element. 4. Scope of Claim No. 11 *
, MO8FEr element for electric power described.