JPS57115260U - - Google Patents
Info
- Publication number
- JPS57115260U JPS57115260U JP155281U JP155281U JPS57115260U JP S57115260 U JPS57115260 U JP S57115260U JP 155281 U JP155281 U JP 155281U JP 155281 U JP155281 U JP 155281U JP S57115260 U JPS57115260 U JP S57115260U
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP155281U JPS6211017Y2 (en) | 1981-01-09 | 1981-01-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP155281U JPS6211017Y2 (en) | 1981-01-09 | 1981-01-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57115260U true JPS57115260U (en) | 1982-07-16 |
| JPS6211017Y2 JPS6211017Y2 (en) | 1987-03-16 |
Family
ID=29800008
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP155281U Expired JPS6211017Y2 (en) | 1981-01-09 | 1981-01-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6211017Y2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58138076A (en) * | 1982-01-04 | 1983-08-16 | ゼネラル・エレクトリツク・カンパニイ | Power mos-fet with shortcircuit between source and base and method of producing same |
| JPS58218173A (en) * | 1982-05-10 | 1983-12-19 | ゼネラル・エレクトリツク・カンパニイ | Bidirectional power high speed mosfet element |
| JPS6084881A (en) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | High-power mos fet and manufacture thereof |
| JPH01300568A (en) * | 1988-05-27 | 1989-12-05 | Mitsubishi Electric Corp | Semiconductor device |
| JPH03166766A (en) * | 1989-11-27 | 1991-07-18 | Mitsubishi Electric Corp | Insulated-gate bipolar transistor and manufacture thereof |
| JPH03272184A (en) * | 1990-03-22 | 1991-12-03 | Mitsubishi Electric Corp | Insulated-gate bipolar transistor |
| JP2009130002A (en) * | 2007-11-20 | 2009-06-11 | Nippon Inter Electronics Corp | Jbs and mosfet |
-
1981
- 1981-01-09 JP JP155281U patent/JPS6211017Y2/ja not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58138076A (en) * | 1982-01-04 | 1983-08-16 | ゼネラル・エレクトリツク・カンパニイ | Power mos-fet with shortcircuit between source and base and method of producing same |
| JPS58218173A (en) * | 1982-05-10 | 1983-12-19 | ゼネラル・エレクトリツク・カンパニイ | Bidirectional power high speed mosfet element |
| JPS6084881A (en) * | 1983-10-17 | 1985-05-14 | Toshiba Corp | High-power mos fet and manufacture thereof |
| JPH01300568A (en) * | 1988-05-27 | 1989-12-05 | Mitsubishi Electric Corp | Semiconductor device |
| JPH03166766A (en) * | 1989-11-27 | 1991-07-18 | Mitsubishi Electric Corp | Insulated-gate bipolar transistor and manufacture thereof |
| JPH03272184A (en) * | 1990-03-22 | 1991-12-03 | Mitsubishi Electric Corp | Insulated-gate bipolar transistor |
| JP2009130002A (en) * | 2007-11-20 | 2009-06-11 | Nippon Inter Electronics Corp | Jbs and mosfet |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211017Y2 (en) | 1987-03-16 |