JPS5821365A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS5821365A JPS5821365A JP57050405A JP5040582A JPS5821365A JP S5821365 A JPS5821365 A JP S5821365A JP 57050405 A JP57050405 A JP 57050405A JP 5040582 A JP5040582 A JP 5040582A JP S5821365 A JPS5821365 A JP S5821365A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resistor
- resistance
- elements
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57050405A JPS5821365A (ja) | 1982-03-29 | 1982-03-29 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57050405A JPS5821365A (ja) | 1982-03-29 | 1982-03-29 | 半導体集積回路装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP48097567A Division JPS5947463B2 (ja) | 1973-08-29 | 1973-08-29 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5821365A true JPS5821365A (ja) | 1983-02-08 |
JPH022296B2 JPH022296B2 (enrdf_load_stackoverflow) | 1990-01-17 |
Family
ID=12857949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57050405A Granted JPS5821365A (ja) | 1982-03-29 | 1982-03-29 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5821365A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6180519U (enrdf_load_stackoverflow) * | 1984-10-31 | 1986-05-29 | ||
JPH0269972A (ja) * | 1988-09-05 | 1990-03-08 | Seiko Epson Corp | 半導体集積装置 |
JPH0521718A (ja) * | 1991-07-10 | 1993-01-29 | Mitsubishi Electric Corp | R−2rラダー抵抗装置 |
-
1982
- 1982-03-29 JP JP57050405A patent/JPS5821365A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6180519U (enrdf_load_stackoverflow) * | 1984-10-31 | 1986-05-29 | ||
JPH0269972A (ja) * | 1988-09-05 | 1990-03-08 | Seiko Epson Corp | 半導体集積装置 |
JPH0521718A (ja) * | 1991-07-10 | 1993-01-29 | Mitsubishi Electric Corp | R−2rラダー抵抗装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH022296B2 (enrdf_load_stackoverflow) | 1990-01-17 |
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