JPS58212169A - 三層電極構造を有する半導体装置 - Google Patents

三層電極構造を有する半導体装置

Info

Publication number
JPS58212169A
JPS58212169A JP57094702A JP9470282A JPS58212169A JP S58212169 A JPS58212169 A JP S58212169A JP 57094702 A JP57094702 A JP 57094702A JP 9470282 A JP9470282 A JP 9470282A JP S58212169 A JPS58212169 A JP S58212169A
Authority
JP
Japan
Prior art keywords
layer
aluminum
covered
metal layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57094702A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0444430B2 (cg-RX-API-DMAC7.html
Inventor
Tatsumi Tamura
田村　建美
Kinzo Tao
田尾　欣三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57094702A priority Critical patent/JPS58212169A/ja
Publication of JPS58212169A publication Critical patent/JPS58212169A/ja
Publication of JPH0444430B2 publication Critical patent/JPH0444430B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57094702A 1982-06-04 1982-06-04 三層電極構造を有する半導体装置 Granted JPS58212169A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57094702A JPS58212169A (ja) 1982-06-04 1982-06-04 三層電極構造を有する半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57094702A JPS58212169A (ja) 1982-06-04 1982-06-04 三層電極構造を有する半導体装置

Publications (2)

Publication Number Publication Date
JPS58212169A true JPS58212169A (ja) 1983-12-09
JPH0444430B2 JPH0444430B2 (cg-RX-API-DMAC7.html) 1992-07-21

Family

ID=14117498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57094702A Granted JPS58212169A (ja) 1982-06-04 1982-06-04 三層電極構造を有する半導体装置

Country Status (1)

Country Link
JP (1) JPS58212169A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255234A (ja) * 1988-04-05 1989-10-12 Toshiba Corp 半導体装置
JP2002343980A (ja) * 2001-05-21 2002-11-29 Rohm Co Ltd 可変容量ダイオード及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444866A (en) * 1977-09-16 1979-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5444866A (en) * 1977-09-16 1979-04-09 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01255234A (ja) * 1988-04-05 1989-10-12 Toshiba Corp 半導体装置
JP2002343980A (ja) * 2001-05-21 2002-11-29 Rohm Co Ltd 可変容量ダイオード及びその製造方法

Also Published As

Publication number Publication date
JPH0444430B2 (cg-RX-API-DMAC7.html) 1992-07-21

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