JPS58212139A - ３−５族化合物半導体素子 - Google Patents

３−５族化合物半導体素子

Info

Publication number
JPS58212139A
JPS58212139A JP58028232A JP2823283A JPS58212139A JP S58212139 A JPS58212139 A JP S58212139A JP 58028232 A JP58028232 A JP 58028232A JP 2823283 A JP2823283 A JP 2823283A JP S58212139 A JPS58212139 A JP S58212139A
Authority
JP
Japan
Prior art keywords
group compound
substrate
iii
film
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58028232A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6129140B2 (https=
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP58028232A priority Critical patent/JPS58212139A/ja
Publication of JPS58212139A publication Critical patent/JPS58212139A/ja
Publication of JPS6129140B2 publication Critical patent/JPS6129140B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58028232A 1983-02-22 1983-02-22 ３−５族化合物半導体素子 Granted JPS58212139A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58028232A JPS58212139A (ja) 1983-02-22 1983-02-22 ３−５族化合物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58028232A JPS58212139A (ja) 1983-02-22 1983-02-22 ３−５族化合物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP13582174A Division JPS5161265A (en) 1974-11-25 1974-11-25 335 zokukagobutsuhandotaisoshi

Publications (2)

Publication Number Publication Date
JPS58212139A true JPS58212139A (ja) 1983-12-09
JPS6129140B2 JPS6129140B2 (https=) 1986-07-04

Family

ID=12242845

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58028232A Granted JPS58212139A (ja) 1983-02-22 1983-02-22 ３−５族化合物半導体素子

Country Status (1)

Country Link
JP (1) JPS58212139A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481325A (en) * 1987-09-24 1989-03-27 Nec Corp Manufacture of multilayer semiconductor wafer

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7335995B2 (en) 2001-10-09 2008-02-26 Tessera, Inc. Microelectronic assembly having array including passive elements and interconnects
DE10297316T5 (de) 2001-10-09 2004-12-09 Tessera, Inc., San Jose Gestapelte Baugruppen
US6977440B2 (en) 2001-10-09 2005-12-20 Tessera, Inc. Stacked packages
US7071547B2 (en) 2002-09-11 2006-07-04 Tessera, Inc. Assemblies having stacked semiconductor chips and methods of making same
US7545029B2 (en) 2006-08-18 2009-06-09 Tessera, Inc. Stack microelectronic assemblies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6481325A (en) * 1987-09-24 1989-03-27 Nec Corp Manufacture of multilayer semiconductor wafer

Also Published As

Publication number Publication date
JPS6129140B2 (https=) 1986-07-04

Similar Documents

Publication Publication Date Title
JP3455512B2 (ja) エピタキシャル成長用基板およびその製造方法
US6861663B2 (en) Group III nitride compound semiconductor light-emitting device
KR100319300B1 (ko) 이종접합구조의 양자점 버퍼층을 가지는 반도체 소자
WO2000016378A3 (en) Method of fabricating group-iii nitride-based semiconductor device
US6355951B1 (en) Field effect semiconductor device
JP3410863B2 (ja) 化合物半導体装置及び化合物半導体発光装置
JPS58212139A (ja) ３−５族化合物半導体素子
JPS63142682A (ja) 電界効果半導体装置
US6593596B1 (en) Semiconductor light emitting device and method for adjusting the luminous intensity thereof
JPH10189944A (ja) 高電子移動度トランジスタ
JP2007081346A (ja) 窒化物半導体電界効果トランジスタ
JPH11233824A (ja) 窒化ガリウム系化合物半導体素子
US20040264248A1 (en) Crystal growth method of nitride semiconductor
JP2956619B2 (ja) Ｉｉｉ−ｖ族化合物半導体結晶の成長方法
JPS6356960A (ja) 高速半導体装置
JPS58170069A (ja) ３−ｖ族化合物半導体装置
JPH02196474A (ja) 半導体受光素子
JPH10229051A (ja) ＧａＮ系半導体装置とその製造方法
EP1024565A3 (en) Method for fabricating a semiconductor optical device
JP2694488B2 (ja) 半導体基板及び半導体受発光素子
JPS61106497A (ja) 燐化砒化ガリウムエピタキシヤル膜の成長方法
JPH0220086A (ja) 半導体レーザ
JPH02205326A (ja) 半導体装置
JP2893099B2 (ja) Ｍｉｓ型高効率発光素子
Turner et al. Microwave MESFET's fabricated in GaAs layers grown on SOS Substrates