JPS58204811A - イオン化成膜装置 - Google Patents
イオン化成膜装置Info
- Publication number
- JPS58204811A JPS58204811A JP57086265A JP8626582A JPS58204811A JP S58204811 A JPS58204811 A JP S58204811A JP 57086265 A JP57086265 A JP 57086265A JP 8626582 A JP8626582 A JP 8626582A JP S58204811 A JPS58204811 A JP S58204811A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- current
- cathode
- anode
- current value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57086265A JPS58204811A (ja) | 1982-05-20 | 1982-05-20 | イオン化成膜装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57086265A JPS58204811A (ja) | 1982-05-20 | 1982-05-20 | イオン化成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58204811A true JPS58204811A (ja) | 1983-11-29 |
JPS6411714B2 JPS6411714B2 (enrdf_load_stackoverflow) | 1989-02-27 |
Family
ID=13881985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57086265A Granted JPS58204811A (ja) | 1982-05-20 | 1982-05-20 | イオン化成膜装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58204811A (enrdf_load_stackoverflow) |
-
1982
- 1982-05-20 JP JP57086265A patent/JPS58204811A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6411714B2 (enrdf_load_stackoverflow) | 1989-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4844775A (en) | Ion etching and chemical vapour deposition | |
US4812712A (en) | Plasma processing apparatus | |
GB2125171A (en) | A method of sensing the amount of a thin film deposited during an ion plating process | |
JP2737377B2 (ja) | プラズマ処理装置 | |
JPS58204811A (ja) | イオン化成膜装置 | |
JPS5825742B2 (ja) | プラズマエッチング処理方法及び処理装置 | |
US6223686B1 (en) | Apparatus for forming a thin film by plasma chemical vapor deposition | |
JP3422724B2 (ja) | 圧電素子の周波数調整装置 | |
JPS62228482A (ja) | 低温プラズマ処理装置 | |
JPH0230384B2 (ja) | Supatsutahohooyobisochi | |
JPH0378954A (ja) | イオン源 | |
JP3038828B2 (ja) | プラズマ処理方法 | |
JPS58171822A (ja) | ドライエツチング方法 | |
JP3917061B2 (ja) | 圧電素子の周波数調整装置 | |
JPS58185418A (ja) | 厚いカ−ボン膜の成膜方法 | |
JPH0758031A (ja) | イオン蒸着薄膜形成装置及び該装置を用いた成膜方法 | |
JPS6135561Y2 (enrdf_load_stackoverflow) | ||
JPS63238266A (ja) | スパツタリング装置 | |
JPS62270767A (ja) | スパツタリング装置 | |
JP2985230B2 (ja) | プラズマ装置 | |
JPH06101458B2 (ja) | プラズマ気相成長装置 | |
JPS6070174A (ja) | スパッタリング装置 | |
JPH05190309A (ja) | 抵抗体膜の製造方法 | |
JPS634066A (ja) | バイアススパツタ装置 | |
JPS59199038A (ja) | 絶縁体薄膜の形成方法 |