JPS582025A - Pattern formation - Google Patents

Abstract

PURPOSE:To contrive the accuracy of resist pattern dimension, the prevention of defect generation and the process simplification, by applying resist material such as polymer containing aryl radical for pattern forming exposure on a substrate later to develop by oxygen-containing gas plasma. CONSTITUTION:In pattern formation to develop a resist pattern by a dry developing technique, resist material constituted of polymer or copolymer containing at least two aryl radicals for one repeated unit is applied on the substrate for pattern forming exposure later to develop the resist material after exposure by oxygen-containing gas plasma. This dry developing technique varies the molecular characteristic of resist by the irradiation of radioactive rays to form a resist pattern from the difference of plasma etching speed between the exposed and non-exposed parts.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming an arm turn, and more specifically, to a method for forming an arm turn, which comprises forming a resist Δ turn (by a dry film technique). .

Conventionally, a method using 311m liquid has been commonly used to create resist patterns. This method uses, for example, an electron beam,
A resist material that is sensitive to radiation such as X-rays, ultraviolet rays, etc. is treated with a developer mainly consisting of an organic solvent. This is the difference in the rate of dissolution in the molten screen.

However, when a turn is formed according to this method, even if the exposure is highly accurate, the resist pattern swells and contracts, causing distortion in the vine-turn. You can avoid lowering your energy level and improve your strength. A further disadvantage is that there is a tendency for the surface of the substrate to become contaminated due to impurities present in the developer solution.

The above-mentioned drawbacks are problems that need to be solved as soon as possible as semiconductor devices have become increasingly highly integrated and highly integrated. As a result, we have completed the present invention, which will be described in detail below, considering the use of the dry etching technology T3J image technology KE, which is currently commonly used in semiconductor manufacturing processes. 1) A resist material consisting of a polymer or copolymer containing at least two allyl groups in the repeating unit of υ is applied to the substrate. Apply, Δ
After the turn-forming exposure is performed, the resist material in the exposed area is developed with plasma of an oxygen-containing gas.
゛In the present invention, such dry development technology (f-lasma development technology) changes the molecular properties of the resist by irradiating with radiation, and the difference between exposed and unexposed areas is improved. Lasmae consists of forming a resist arm turn based on the difference in ching speed. Therefore, although the resist material used in the present invention has negative properties in solution development, it is difficult to form a f-shaped turn in the f/i development of the present invention. I can do it.

The resist material used in the present invention must be composed of a polymer or copolymer containing at least two allyl groups in one repeating unit.

Suitable polymers and copolymers include, for example, dicarbonyl ester polymers such as diallyl orthophthalate, diallyl isophthalate, diallyl terephthalate, and polymers such as triallyl cyanurate, triallyl isocyanurate, and the like. , and these copolymers tTo
can be used.

The plasma used in the present invention is a plasma of an oxygen-containing gas, specifically KFi, oxygen gas, water vapor [oxygen gas (including oxygen), ozone-oxygen mixed gas,
Alponic-oxygen mixed gas and other gases can be mentioned. If a plasma tube of a gas such as N2 or CF4 is used as a substitute for such an oxygen-containing fx, all of the unexposed and exposed areas will be uniformly etched, making I-lean development impossible.

When carrying out the Gutzu I development of the invention, it is particularly advantageous to use a parallel platen plasma etching apparatus. This is because this type of apparatus is considered effective in obtaining highly accurate patterns with uniform development results. However, if necessary, a cylindrical fl)e etching device or the like can also be used.゛According to the present invention, dry development becomes possible (Register)
It is possible to improve the dimensional accuracy of 71 turns, prevent defects caused by contamination of the developer, and simplify process 9. moreover,
Combining resist removal and processing with dengue dry processing technology, it is possible to achieve drastic dryness comparable to that of silica gel coating.

Process automation becomes possible.　　　　.

Next, this explanation will be explained using an example of T1.

Example 1: Weight average molecular weight (MY) about 10.000! 2) A resist solution was obtained by dissolving 1 g of lysoallylisophthalate in 2.5 parts of 2-nitoxyethyl acetate, and this resist solution was coated with a spin code method until the dry film thickness was 1.5 g.
It was coated on a silicon substrate to a thickness of 4 μm. After application-
1. Obtain the sample by glybake for 30 minutes at a temperature of 80° C. in a nitrogen atmosphere, c.

A pattern was drawn by irradiating the sample with an electron beam at an accelerating voltage of 30 kV.Next, the sample was transferred to a parallel plate lid glasmae.
The sample was placed in a cleaning device and delaminated. At the beginning of this development, the inside of the apparatus was evacuated, water was bubbled into 9 vkO oxygen and the pressure inside the apparatus was 0.1 Torr, and plasma treatment was performed for 5 minutes under the condition of applied power of 03 Wh''.

In this way, the residual film rate of the plasma developed edge and unexposed area was reduced to 3.
0- and an electron beam sensitivity of 2.times.10.sup.2 was obtained.

Example 2: The same sample as in Example 1 above was exposed to a 190-250 nanometer strong spectra, 1 garlic, 500 W Deep Uv run, and then dry developed according to the same procedure as described in Example 1. The resist in the exposed areas was etched and removed, while the remaining film rate in the unexposed areas was 30%. The exposure amount at this time was equivalent to the exposure amount at which the residual film ratio was 0 when I-limethyl methacrylate was developed with a mixed solution of methyl isobutyl ketone/isopropyl alcohol (1/3).

Claims (1)

[Claims] 1. After applying a resist material made of a polymer or -polymer containing at least two allyl groups in one repeating unit to the nose plate and performing nodatan forming exposure, the resist material in the exposed area is A method of forming a pattern, the method comprising applying a plasma of a containing gas.