JPS58199796A - 液体封止結晶引上げ装置 - Google Patents

液体封止結晶引上げ装置

Info

Publication number
JPS58199796A
JPS58199796A JP7923682A JP7923682A JPS58199796A JP S58199796 A JPS58199796 A JP S58199796A JP 7923682 A JP7923682 A JP 7923682A JP 7923682 A JP7923682 A JP 7923682A JP S58199796 A JPS58199796 A JP S58199796A
Authority
JP
Japan
Prior art keywords
crucible
crystal
liquid
diameter
heating element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7923682A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6128634B2 (enrdf_load_stackoverflow
Inventor
Hideo Nakanishi
秀男 中西
Keigo Hoshikawa
圭吾 干川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7923682A priority Critical patent/JPS58199796A/ja
Publication of JPS58199796A publication Critical patent/JPS58199796A/ja
Publication of JPS6128634B2 publication Critical patent/JPS6128634B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7923682A 1982-05-13 1982-05-13 液体封止結晶引上げ装置 Granted JPS58199796A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7923682A JPS58199796A (ja) 1982-05-13 1982-05-13 液体封止結晶引上げ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7923682A JPS58199796A (ja) 1982-05-13 1982-05-13 液体封止結晶引上げ装置

Publications (2)

Publication Number Publication Date
JPS58199796A true JPS58199796A (ja) 1983-11-21
JPS6128634B2 JPS6128634B2 (enrdf_load_stackoverflow) 1986-07-01

Family

ID=13684225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7923682A Granted JPS58199796A (ja) 1982-05-13 1982-05-13 液体封止結晶引上げ装置

Country Status (1)

Country Link
JP (1) JPS58199796A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116195A (ja) * 1982-12-23 1984-07-04 Toshiba Corp 化合物半導体単結晶の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59116195A (ja) * 1982-12-23 1984-07-04 Toshiba Corp 化合物半導体単結晶の製造方法

Also Published As

Publication number Publication date
JPS6128634B2 (enrdf_load_stackoverflow) 1986-07-01

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