JPS58198816A - Impregnation type negative electrode - Google Patents

Impregnation type negative electrode

Info

Publication number
JPS58198816A
JPS58198816A JP57080948A JP8094882A JPS58198816A JP S58198816 A JPS58198816 A JP S58198816A JP 57080948 A JP57080948 A JP 57080948A JP 8094882 A JP8094882 A JP 8094882A JP S58198816 A JPS58198816 A JP S58198816A
Authority
JP
Japan
Prior art keywords
mesh
negative electrode
cathode
impregnated
bundle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57080948A
Other languages
Japanese (ja)
Inventor
Takao Saito
孝夫 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57080948A priority Critical patent/JPS58198816A/en
Publication of JPS58198816A publication Critical patent/JPS58198816A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/04Manufacture of electrodes or electrode systems of thermionic cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid Thermionic Cathode (AREA)

Abstract

PURPOSE:To enable a negative electrode to operate in high current density with its longer duration of life by impregnating with an emitter the gap part in an overlapped part, formd by a mesh comprising a thin wire such as W, etc., and the winding of the mesh of a negative electrode substrate obtained by winding the mesh into a coil shape. CONSTITUTION:After W mesh with an arbitrary width is made a double shaped like vinegared rice rolled in layer, by rolling said mesh arbitrary times into an arbitrary diameter and the ends of the mesh 2 are fixed, it is fixed as required by means of laser welding, etc. Then, after dipping the mesh bundle in a methyl mechacrylate monomer, etc., and impregnating the holes of the mesh bundle with this monomer while subjecting the bundle to vacuum degassing, this monomer is polymerized and hardened. After heating said negative electrode substrate to thermally decompose and remove the impregnated methyl polymer, said substrate is heated under the atmosphere of hydrogen to obtain a clear negative electrode structure, and is made a negative electrode by impregnating said structure with an emitter under the atmosphere of hydrogen. Hereby, the negative electrode is enabled to operate with high current density with longer duration of life, along with the improvement of its reliability.

Description

【発明の詳細な説明】 本発明は含浸型陰極の構造に関する。[Detailed description of the invention] The present invention relates to the structure of an impregnated cathode.

含浸型陰極は長寿命、高電流密度・動作を特徴とし好ん
で高信頼性、高出力電子管に利用せられる。第1図はか
かる含浸型陰極構造を模式的に示す断面図であり、タン
グステン粉末の焼結体から成る陰極基体1中に酸化バリ
ウム(Bad)、  酸化カルシウム(Cab)及び酸
化アルミニウム(A#03)から成る電子放射金属酸化
物2(以下エンツタ−と云う)を含浸して形成せられた
含浸型陰極の陰極基体が、例えばモリブデン、タングス
テン等の高温金属から成る陰極支持体3にろう付され°
〔居り、ヒーター4に依り所定温度に加熱されて陰極基
体表面より電子を放出する。
Impregnated cathodes are characterized by long life, high current density, and operation, and are preferred for use in highly reliable, high-power electron tubes. FIG. 1 is a cross-sectional view schematically showing such an impregnated cathode structure, in which barium oxide (Bad), calcium oxide (Cab), and aluminum oxide (A#03) are contained in a cathode base 1 made of a sintered body of tungsten powder. ) A cathode substrate of an impregnated cathode formed by impregnating an electron-emitting metal oxide 2 (hereinafter referred to as ENTSTER) is brazed to a cathode support 3 made of a high-temperature metal such as molybdenum or tungsten. °
[The cathode substrate is heated to a predetermined temperature by the heater 4, and electrons are emitted from the surface of the cathode substrate.

従来、かかる含浸型陰極はタングステン粉末を、プレス
成形後、水素ガス雰囲気中で所要、 掛は密度となる様
、高温焼結して得られる所謂ポーラスタングステンに切
削性向上の高調或は、軟質の例えば、プラスチ、りを含
浸して所要の陰極基体。
Conventionally, such impregnated cathodes are made by press-forming tungsten powder and then sintering it at high temperatures in a hydrogen gas atmosphere to obtain the required density. For example, plasti impregnates the required cathode substrate.

形状に加工した後、真空中又は空気中加熱に依って前記
銅或はプラスチックを抽出除去し、陰極基体とし、更に
真空中又は水素雰囲気中でエミッターを溶融含浸して製
造せられる。前記ポーラスタングステンの空孔率は、含
浸型陰極の特性に大きな影響を与える要因であシ、空孔
率が大きい場合には、エミッター含浸作業上有利である
が陰極構体としての強度低下或は工<ツタ−の過剰な蒸
発に依って電子管の特性劣化を示す、逆に空孔率が小さ
い場合はエミッターの含浸を難しくすると共に含浸量が
少ない事に依り、高電流密度動作と云う特徴が阻害され
る。此の為従来方法に於ては、原料のタングステン粉末
の粒度選足から焼結工程に至る各製造条件を細く調整し
て所要の空孔率を有するポーラスタングステンを得てい
た。
After processing into a shape, the copper or plastic is extracted and removed by heating in vacuum or air to form a cathode substrate, and then an emitter is melted and impregnated in vacuum or in a hydrogen atmosphere. The porosity of the porous tungsten is a factor that greatly affects the characteristics of the impregnated cathode.If the porosity is large, it is advantageous for emitter impregnation work, but it may reduce the strength of the cathode structure or <Excessive evaporation of ivy causes deterioration of electron tube characteristics; conversely, if the porosity is small, it becomes difficult to impregnate the emitter, and the small amount of impregnation impedes the characteristic of high current density operation. be done. For this reason, in the conventional method, porous tungsten having the required porosity was obtained by finely adjusting each manufacturing condition from the grain size selection of the raw material tungsten powder to the sintering process.

此の様に従来の製造方法に依りポーラスタングステンを
得る事は、夷造原料、製造方法に多くの問題を有し、所
要の空孔率を得る事が難しいと共に焼結体である為、空
孔率の太きさや分布状態を均一にし得る保証は無く、む
しろ均一でないのが普通であって、かかる不均一な空孔
部を有するポーラスタングステン基体から成る含浸型陰
極は、その動作時に於けるエミッションの均一性を欠き
、更に電子ビームの収束性が悪くなり、ひいては、例え
ば電子管機能を損う重大な欠陥とも成シ得る。
Obtaining porous tungsten using conventional manufacturing methods has many problems with the raw materials and manufacturing methods, it is difficult to obtain the required porosity, and since it is a sintered body, it is difficult to obtain porous tungsten. There is no guarantee that the thickness and distribution of porosity can be made uniform; in fact, it is normal that the porosity is not uniform. This results in a lack of uniformity in emission, and furthermore, poor convergence of the electron beam, which can even result in a serious defect that impairs the function of the electron tube, for example.

一方ポーラスタングステンの空孔部は空孔部全体が電子
放射面に通じている事即ちオープンボアである事が必要
であるが粉末焼結法ではプレス圧力、焼結温度2時間等
の条件に依り部分的な閉鎖孔を発生する為、エミッター
含浸がされずエミッションの不均一な陰極となると共に
有効陰極基体体積の減少となって長寿命と云う特徴を失
う恐れがあった。
On the other hand, the pores in porous tungsten must be open-bore, that is, the entire pore must communicate with the electron emitting surface, but in the powder sintering method, this depends on conditions such as press pressure and sintering temperature for 2 hours. Due to the occurrence of partial closed pores, the emitter is not impregnated, resulting in a cathode with non-uniform emission, and the effective volume of the cathode substrate is reduced, leading to the risk of losing its long life characteristic.

本発明はかかる問題点を除き真に長寿命と高電流密度動
作全可能とする信頼性の高い含浸型陰極を提供するもの
である。
The present invention eliminates these problems and provides a highly reliable impregnated cathode that has a truly long life and is capable of high current density operation.

即ち、タングステン等の耐熱金属細線から成るメツシュ
全コイル状に捲廻して得られる海苔捲状の東金陰極基体
とし、前記メツシュと捲廻しに依って得られる重なり部
分の間隙部にエミッターを含浸した事を特徴としている
That is, a mesh made of fine heat-resistant metal wire such as tungsten is wound into a whole coil shape to form a seaweed-like Togane cathode substrate, and an emitter is impregnated into the gap between the mesh and the overlapped portion obtained by winding. It is characterized by

本発明に依る陰極に施ては従来法に依る空孔部に相当す
る間隙の数と大きさは原材料として使用するタングステ
ンメツシュの素線径とピッチの選択に依り自由に変える
事が出来、父間隙の大きさが良く揃った物が得られると
共に陰極基体その物の電気伝導、熱伝導も均質且設計値
に促したものとなる等電子放射の安定上大きな利点を有
する。
In the cathode according to the present invention, the number and size of the gaps, which correspond to the pores in the conventional method, can be freely changed by selecting the wire diameter and pitch of the tungsten mesh used as the raw material. It is possible to obtain a material with well-uniformed gap sizes, and the electrical conduction and thermal conduction of the cathode substrate itself are also uniform and adjusted to the designed values, which has a great advantage in terms of stability of isoelectronic emission.

以下実施例に就いて説明する。Examples will be described below.

第2図は本発明にかかる含浸型陰極の製造方法の主要工
程図で、工程Aでは仕意巾のタングステンメツシー全任
意径、任意回数捲廻して海苔巻如来とする。工程Bでメ
ツシュの末端全抵抗溶接或は金属線で縛り、固定した後
必要に依シレーザ或は電子ビーム溶接に依る固定を行う
。尚此の段階でタングステンから成る海苔巻状の束(以
下メツシュ束という)′1に水素雰囲気中で加熱し隣接
する個々の線を焼結させる事は工程りでの加工性をより
良くする上で効果大であった。次に工程Cでメツシュ束
をメタクリル酸メチルモノマーに浸漬し、減圧脱泡して
メツシュ束の空孔中に含浸した後、メタクリル酸メチル
モノマーを重合して硬化させる。工程りで旋盤に移り所
要の陰極形状に切削し陰極基体を得る工程Eでモリブデ
ンから成る陰極支持体に此の陰極基体を取付は工程Fで
空気中で400°01時間の加熱を行い前記工程で含浸
したメタクリル酸メチル重合体を熱分解して除去後、工
程Gで水素雰囲気中で1000℃10分間の加熱処理を
行ない清浄な陰極構体とした。工程Hでは 5 − 水素雰囲気中で陰極基体にエミッタを含浸し陰極とする
。此の様にして得た陰極は焼結に依って得られる所謂ポ
ーラスタングステンとは異り均質な規則性ある空孔とな
る為エミッターの含浸にめて順調に含浸が行なわれると
共にエミッター含浸量その物の信頼性も向上する。
FIG. 2 is a diagram showing the main steps of the method for producing an impregnated cathode according to the present invention. In step A, the tungsten mesh of the intended width is wound to any desired diameter and any number of times to form a laver-wrapped sheet. In step B, the ends of the mesh are fixed by full resistance welding or metal wire, and then fixed by laser or electron beam welding if necessary. At this stage, heating the tungsten seaweed-shaped bundle (hereinafter referred to as mesh bundle) '1 in a hydrogen atmosphere to sinter the adjacent individual wires improves workability in the process. It was very effective. Next, in step C, the mesh bundle is immersed in methyl methacrylate monomer, degassed under reduced pressure, impregnated into the pores of the mesh bundle, and then the methyl methacrylate monomer is polymerized and hardened. In step E, the cathode substrate is cut into the desired cathode shape by a lathe.In step E, the cathode substrate is attached to a cathode support made of molybdenum.In step F, the cathode substrate is heated in air at 400°C for 1 hour. After removing the impregnated methyl methacrylate polymer by thermal decomposition, in step G, heat treatment was performed at 1000° C. for 10 minutes in a hydrogen atmosphere to obtain a clean cathode structure. In step H, the cathode substrate is impregnated with an emitter in a 5-hydrogen atmosphere to form a cathode. Unlike the so-called porous tungsten obtained by sintering, the cathode obtained in this way has homogeneous and regular pores, so impregnation of the emitter can be carried out smoothly and the amount of impregnated emitter can be reduced. The reliability of things also improves.

以上説明した様に本発明に依ればタングステン細線から
成るメッシ&全海苔巻状に依意回数捲廻してメツシュ束
とし前記タングステン細線間の間隙を捲廻した依り得ら
れる重なり部分の間隙部にエミッターを含浸する為、従
来の粉末焼結形陰極の大きな問題であった陰極面からの
エミッションの不均一と云う不都合が解消され、安定亘
長寿命の電子管用陰極金得る事が出来その効果が犬であ
る。
As explained above, according to the present invention, a mesh made of thin tungsten wires is wound a certain number of times in the shape of a whole seaweed roll to form a mesh bundle, and the emitter is placed in the gap between the overlapped portions obtained by winding the gaps between the thin tungsten wires. This eliminates the problem of non-uniform emission from the cathode surface, which was a major problem with conventional powder sintered cathodes, and makes it possible to obtain cathode gold for electron tubes with a stable and long life. It is.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は含浸型陰極の模式的な断面図、第2図は本発明
の含浸型陰極の製造方法の実施例に就いての主要工程図
、第3図は本発明に基くタンゲス 6− テンメツシュの捲廻しの状況を示す斜視図である。 1・・・・・・陰極基体、2・・・・・・エミッター、
3・・・・・・陰極支持体、4・・・・・・ヒーター、
5・・・・・・タングステンメツシュ、6・・・・・・
捲廻し部分、。  7− 第3図
FIG. 1 is a schematic cross-sectional view of an impregnated cathode, FIG. 2 is a main process diagram of an embodiment of the method for manufacturing an impregnated cathode of the present invention, and FIG. 3 is a schematic cross-sectional view of an impregnated cathode. FIG. 3 is a perspective view showing the state of winding. 1... Cathode base, 2... Emitter,
3... cathode support, 4... heater,
5...Tungsten mesh, 6...
The winding part. 7- Figure 3

Claims (1)

【特許請求の範囲】[Claims] タングステン細線から成るメツシュ全コイル状に捲廻し
たメツシュ塊を陰極基体とし、前記メツシュ及び捲廻し
に依って生ずる重なIIs分の間隙部に電子放射物質を
含浸した事を特徴とする含浸型陰極。
An impregnated cathode characterized in that the cathode substrate is a mesh block made of a mesh made of fine tungsten wire wound into a coil shape, and an electron-emitting substance is impregnated into the gap portion of the overlap IIs created by the mesh and the winding. .
JP57080948A 1982-05-14 1982-05-14 Impregnation type negative electrode Pending JPS58198816A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57080948A JPS58198816A (en) 1982-05-14 1982-05-14 Impregnation type negative electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57080948A JPS58198816A (en) 1982-05-14 1982-05-14 Impregnation type negative electrode

Publications (1)

Publication Number Publication Date
JPS58198816A true JPS58198816A (en) 1983-11-18

Family

ID=13732718

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57080948A Pending JPS58198816A (en) 1982-05-14 1982-05-14 Impregnation type negative electrode

Country Status (1)

Country Link
JP (1) JPS58198816A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542060A (en) * 1977-06-07 1979-01-09 Toshiba Corp Semiconductor wafer
JPS5713098A (en) * 1980-06-30 1982-01-23 Sumitomo Heavy Industries Conveyor for freight

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542060A (en) * 1977-06-07 1979-01-09 Toshiba Corp Semiconductor wafer
JPS5713098A (en) * 1980-06-30 1982-01-23 Sumitomo Heavy Industries Conveyor for freight

Similar Documents

Publication Publication Date Title
US5006753A (en) Scandate cathode exhibiting scandium segregation
JPS58154131A (en) Impregnation type cathode
US5294399A (en) Preparation of cathode structures for impregnated cathodes
JPS58198816A (en) Impregnation type negative electrode
JPS5834540A (en) Impregnation-type cathode
JPH01163941A (en) Manufacture of scandium system cathode
CN1044169C (en) Impregnated pellet for a cathode structure and method of producing the same
US3045320A (en) Impregnated cathodes
JPH0630214B2 (en) Impregnated cathode and manufacturing method thereof
JPS612226A (en) Impregnated cathode
JPS5842132A (en) Direct-heated dispenser cathode and manufacturing method
JPH065198A (en) Cathode including cathode element
JP3715790B2 (en) Method for producing impregnated cathode for discharge tube
JP4087912B2 (en) Impregnated cathode substrate, method for producing the same, and impregnated cathode
JPH0341932B2 (en)
JPS5826769B2 (en) Manufacturing method of impregnated cathode
JPS5918539A (en) Impregnated cathode
JPH0461723A (en) Impregnation type cathode and its manufacture
JP3204809B2 (en) Method for producing impregnated cathode assembly
JPH06168660A (en) Impregnation type cathode and manufacture thereof
JPS6017831A (en) Impregnated cathode
JPH0612978A (en) Manufacture of tungsten powder sintered body for impregnation type cathode
JPH04253138A (en) Impregnated cathode
JPH03165419A (en) Manufacture of impregnated cathode
JPH04233127A (en) Manufacture of cathode substrate of impregnation type cathode