JPH06168660A - Impregnation type cathode and manufacture thereof - Google Patents

Impregnation type cathode and manufacture thereof

Info

Publication number
JPH06168660A
JPH06168660A JP31995292A JP31995292A JPH06168660A JP H06168660 A JPH06168660 A JP H06168660A JP 31995292 A JP31995292 A JP 31995292A JP 31995292 A JP31995292 A JP 31995292A JP H06168660 A JPH06168660 A JP H06168660A
Authority
JP
Japan
Prior art keywords
layer
electron
emitting substance
impregnated
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31995292A
Other languages
Japanese (ja)
Inventor
Michio Hara
通雄 原
Kenichi Kanna
憲一 漢那
Takeshi Kodama
健 児玉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP31995292A priority Critical patent/JPH06168660A/en
Publication of JPH06168660A publication Critical patent/JPH06168660A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve an electron emitting characteristic in a space charge limited current area, and reduce grid emission by containing scandium or scandium oxide by specific weight % in the first layer on a surface of an electron emitting material impregnated layer and the second layer on the first layer. CONSTITUTION:About 25% pores of a porous W base body 3 formed of W powder are impregnated with Sc2O3 contained and uncontained electron emitting materials 1 and 2, and a cathode pellet 5 is formed. This pellet 5 is soaked into pure water 7, and water 10 is filled in a container 9 housing an ultrasonic vibrator 8, and ultrasonic vibration is added, and an excess material 2 is removed, and a pore (b) layer is formed. A material 1 formed by adding Sc 0 by 1 to 30 weight % is applied to this (b) layer, and it is heated and melted in a vacuum, and thickness of an (a) layer is adjusted. This pellet 5 is put in a Ta cup 12, and is welded to a Ta sleeve 13, and a W core 14 is heated by an alumina covering heater 15. Thereby, an electron emitting characteristic is improved in a space charge limited current area, and grid emission is reduced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は含浸形カソード及びその
製造方法に係り、特に、多孔質タングステン基体の上部
を、2層構造とした含浸形カソード及びその製造方法に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an impregnated cathode and a method for manufacturing the same, and more particularly to an impregnated cathode having a porous tungsten substrate having a two-layer structure on the upper part thereof and a method for manufacturing the same.

【0002】[0002]

【従来の技術】従来、スカンジウム(Sc)系含浸形カ
ソードは、特開昭59−79934号公報に開示したよ
うに、上部に酸化スカンジウム(Sc23)粒子が分散
している耐熱多孔質層、下部に通常の耐熱多孔質層の複
合多孔質層からなる複合多孔質基体に電子放出物質(B
aO,CaO,Al23等)を含浸させた構造や、特開
昭59−203343号公報に開示されているように、
陰極表面上に微細なタングステン(W)粉,Sc23
及び電子放出物質からなる均一層をもつ構造が提案され
ている。
2. Description of the Related Art Conventionally, a scandium (Sc) -based impregnated cathode has a heat-resistant porous structure in which scandium oxide (Sc 2 O 3 ) particles are dispersed in the upper portion thereof, as disclosed in JP-A-59-79934. Layer, and an electron-emitting substance (B
aO, CaO, Al 2 O 3 etc.) and a structure impregnated with the structure described in JP-A-59-203343.
Fine tungsten (W) powder, Sc 2 O 3 , on the cathode surface,
And structures with uniform layers of electron-emissive materials have been proposed.

【0003】またこのような含浸形カソードは高電流密
度で動作できる反面、動作温度が一般に使用されている
酸化物カソードと比較して約200℃高い。そのため、
カソードからバリウム(Ba)や酸化バリウム(Ba
O)が多量に蒸発してグリッド電極に付着し、その結果
グリッドエミッションの原因となり、電子管の特性に悪
影響を与える。
Further, while such an impregnated cathode can operate at a high current density, its operating temperature is about 200 ° C. higher than that of a commonly used oxide cathode. for that reason,
From the cathode, barium (Ba) or barium oxide (Ba)
A large amount of O) evaporates and adheres to the grid electrode, resulting in grid emission, which adversely affects the characteristics of the electron tube.

【0004】このようなカソードからのBa,BaOの
蒸発を改善する方法として、特公平4−21977号公
報に開示されているように、多孔質W基体の空孔中に含
浸された電子放出物質を基体表面から数μm除去するこ
とが提案されている。
As a method for improving the evaporation of Ba and BaO from the cathode, as described in Japanese Patent Publication No. 4-21977, an electron emitting material impregnated in the pores of a porous W substrate is disclosed. It has been proposed to remove a few μm from the surface of the substrate.

【0005】[0005]

【発明が解決しようとする課題】上記特開昭59−79
934号公報や特開昭59−203343号公報に開示
されたSc系含浸形カソードは、いずれも高い電界時、
すなわち温度制御電流領域では良好な電子放出特性を示
すものの、低い電界の時、すなわち空間電荷制限領域に
おいては電子放出特性が著しく劣化し、主に空間電荷制
御電流領域でカソードを動作させる電子管、例えばブラ
ウン管、撮像管等の電子管においては実用化に耐えるこ
とができなかった。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
The Sc-impregnated cathodes disclosed in Japanese Patent No. 934 and Japanese Patent Laid-Open No. 59-203343 each have a high electric field,
That is, although the electron emission characteristic is excellent in the temperature control current region, the electron emission characteristic is significantly deteriorated in a low electric field, that is, in the space charge limited region, and an electron tube for operating the cathode mainly in the space charge control current region, for example, In electron tubes such as cathode ray tubes and image pickup tubes, it has not been possible to endure practical use.

【0006】また上記特公平4−21977号公報に開
示された、電子放出物質の一部除去によるBa,BaO
の多量蒸発防止方法は、除去方法が適当でないと電子放
出特性が劣化する問題を発生させた。例えば、真空中等
で加熱する方法では表面付近の電子放出物質だけではな
く、基体内部の必要なBaOまで蒸発する。また、機械
的な方法(研磨,ブラシ等)では数μm内部のBaOを
除去することはできず、かえって研磨材等のゴミが付着
する。さらに化学的方法、例えば酸による溶解によると
電子放出物質全体が溶け出すこととなり、いずれも電子
放出特性に悪影響を及ぼすという問題があった。
[0006] Further, as disclosed in Japanese Patent Publication No. 4-21977, Ba, BaO by removing a part of the electron-emitting substance is disclosed.
The large amount evaporation preventing method of (1) causes a problem that the electron emission characteristic is deteriorated if the removing method is not appropriate. For example, in the method of heating in a vacuum or the like, not only the electron-emitting substance near the surface but also required BaO inside the substrate is evaporated. Further, it is not possible to remove BaO within several μm by a mechanical method (polishing, brush, etc.), but rather dust such as an abrasive adheres. Further, a chemical method such as dissolution with an acid causes the entire electron-emitting substance to be melted out, which has a problem that the electron-emitting characteristics are adversely affected.

【0007】そこで、本発明は上記種々の課題を考慮し
て、空間電荷制限電流領域で電子放出特性が改善され、
しかもBa,BaOの多量蒸発によるグリッドエミッシ
ョンを低減させた、含浸形カソード及びその製造方法を
提供することを目的とする。
In view of the above problems, the present invention improves the electron emission characteristics in the space charge limited current region,
Moreover, it is an object of the present invention to provide an impregnated cathode and a method for manufacturing the same, in which grid emission due to a large amount of evaporation of Ba and BaO is reduced.

【0008】[0008]

【課題を解決するための手段】上記課題は本発明によれ
ば、耐熱性多孔質金属基体に電子放出物質を含浸させて
なる含浸形カソードにおいて、前記電子放出物質含浸層
の表面の第1層と、該第1層上の第2層に、スカンジウ
ムあるいは酸化スカンジウムが含有されてなることを特
徴とする含浸形カソードによって解決される。
According to the present invention, there is provided an impregnated cathode comprising a heat-resistant porous metal substrate impregnated with an electron-emitting substance, the first layer on the surface of the electron-emitting substance-impregnated layer. And a second layer on the first layer containing scandium or scandium oxide.

【0009】本発明では、前記第1層と第2層に含有さ
れるスカンジウムあるいは酸化スカンジウムが前記電子
放出物質に1〜30重量%含有していることが好まし
い。
In the present invention, it is preferable that scandium or scandium oxide contained in the first layer and the second layer is contained in the electron emitting material in an amount of 1 to 30% by weight.

【0010】更に本発明では、前記第1層の厚さが5μ
m〜0.3mmであり、一方前記第2層の厚さが50n
m〜5μmであることが好ましい。
Further, in the present invention, the thickness of the first layer is 5 μm.
m-0.3 mm, while the second layer has a thickness of 50 n
It is preferably m to 5 μm.

【0011】更に上記課題は本発明によれば、耐熱性多
孔質金属基体に、スカンジウムあるいは酸化スカンジウ
ムを含まない電子放出物質を含浸する工程、前記電子放
出物質が含浸された耐熱性多孔質金属基体の表層部から
該電子放出物質を一部除去する工程、及び前記電子放出
物質を除去した該耐熱性多孔質金属基体の表層部及びそ
の上層にスカンジウムあるいは酸化スカンジウムを含有
せしめる工程を有することを特徴とする含浸形カソード
の製造方法によって解決される。
Further, according to the present invention, the above object is to impregnate a heat-resistant porous metal substrate with an electron-emitting substance containing no scandium or scandium oxide, and a heat-resistant porous metal substrate impregnated with the electron-emitting substance. Of the heat-resistant porous metal substrate from which the electron-emitting substance has been removed, and a step of incorporating scandium or scandium oxide into the surface layer and the upper layer thereof. And a method of manufacturing an impregnated cathode.

【0012】更に上記課題は本発明によれば、耐熱性多
孔質金属基体に酸化バリウムを含む電子放出物質を含浸
し、該酸化バリウムを含む電子放出物質の一部を前記耐
熱性多孔質金属基体表面から除去する工程を有する含浸
形カソードの製造方法において、前記電子放出物質の除
去を純水中で且つ超音波振動により行うことを特徴とす
る含浸形カソードの製造方法によって解決される。
Further, according to the present invention, according to the present invention, a heat-resistant porous metal substrate is impregnated with an electron-emitting substance containing barium oxide, and a part of the electron-emitting substance containing barium oxide is part of the heat-resistant porous metal substrate. A method for producing an impregnated cathode, comprising a step of removing from the surface, wherein the electron-emitting substance is removed in pure water by ultrasonic vibration.

【0013】[0013]

【作用】本発明によれば、耐熱性多孔質金属基体の表面
の上層(第2層)には十分な量のスカンジウム(Sc)
が存在しており、しかもその下層部(第1層)では、通
常の電子放出物質から十分な量のBa(バリウム)が補
給されるため、空間電荷制限電流領域において、電子放
出特性が改善される。また本発明では、その製造過程に
おけるBaO等の電子放出物質の一部除去を純水中で、
且つ超音波振動を用いて行うため除去量を清浄にしかも
微細にコントロールでき、電子放出特性を保持しながら
良好にBaOの蒸発を抑制し、グリッドエミッションを
防止できる。
According to the present invention, a sufficient amount of scandium (Sc) is contained in the upper layer (second layer) of the surface of the heat resistant porous metal substrate.
In addition, since a sufficient amount of Ba (barium) is replenished from the ordinary electron emitting substance in the lower layer portion (first layer) thereof, the electron emission characteristic is improved in the space charge limited current region. It Further, in the present invention, a part of the electron emitting substance such as BaO in the manufacturing process is removed in pure water,
Moreover, since the removal is performed by using ultrasonic vibration, the removal amount can be controlled cleanly and finely, the evaporation of BaO can be suppressed well while maintaining the electron emission characteristics, and the grid emission can be prevented.

【0014】[0014]

【実施例】以下、本発明の実施例を図面を参照して詳細
に説明する。
Embodiments of the present invention will now be described in detail with reference to the drawings.

【0015】図1は本発明に係る含浸形カソードの一実
施例を示す模式断面図である。図1に示すように本発明
の含浸形カソードは、Sc23を含む電子放出物質1
を、多孔質W(タングステン)基体3の上層部b層と更
にその耐熱性多孔質金属基体上面a層に設ける。従っ
て、多孔質W基体3の下層部はSc23を含まない電子
放出物質2からなる。
FIG. 1 is a schematic sectional view showing an embodiment of an impregnated cathode according to the present invention. As shown in FIG. 1, the impregnated cathode of the present invention has an electron emission material 1 containing Sc 2 O 3.
Is provided on the upper layer b layer of the porous W (tungsten) substrate 3 and further on the heat-resistant porous metal substrate upper surface a layer. Therefore, the lower layer portion of the porous W substrate 3 is made of the electron emitting material 2 that does not contain Sc 2 O 3 .

【0016】多孔質W基体は直径1.5mmで厚さが
0.6mmであり、空孔率20〜40%の範囲のものが
用いられる。なお、多孔質基体としてはWの他にMo,
Ir,Pt,Re等及びこれらの合金を用いても良い。
The porous W substrate has a diameter of 1.5 mm, a thickness of 0.6 mm, and a porosity of 20 to 40%. In addition to W, Mo,
You may use Ir, Pt, Re, etc. and these alloys.

【0017】図2は本発明に係る含浸形のカソードの製
造工程を示すフローチャートである。本発明に係る含浸
形カソードは、まず粒径約5μmのW粉を用いて空孔率
約25%の多孔質W基体3を作成しその空孔に、Sc2
3を含む電子放出物質1と、Sc23を含まない電子
放出物質2とを含浸させて本発明の構造をもつカソード
ペレットを作る。その作り方は、まずBaO,CaO,
AlO23をモル比で4:1:1の割合に配合した、S
23を含まない電子放出物質2を多孔質W基体3の上
下部に置き、真空中又は水素雰囲気中で約1700℃に
加熱し、含浸してカソードペレットを作った。
FIG. 2 is a flow chart showing the manufacturing process of the impregnated cathode according to the present invention. In the impregnated cathode according to the present invention, first, a W powder having a particle size of about 5 μm is used to form a porous W substrate 3 having a porosity of about 25%, and Sc 2 is added to the pores.
An electron emitting material 1 containing O 3 and an electron emitting material 2 not containing Sc 2 O 3 are impregnated to prepare a cathode pellet having the structure of the present invention. First of all, how to make it is BaO, CaO,
AlO 2 O 3 was mixed in a molar ratio of 4: 1: 1, S
The electron emitting material 2 containing no c 2 O 3 was placed on the upper and lower parts of the porous W substrate 3, heated to about 1700 ° C. in a vacuum or hydrogen atmosphere, and impregnated to form cathode pellets.

【0018】なお、電子放出物質として上記モル比と異
なったモル比の材料を用いることもできる。
It is also possible to use a material having a molar ratio different from the above molar ratio as the electron emitting substance.

【0019】その後図3に示すように、含浸済みのカソ
ードペレット5を500mlのビーカー6に10ケ(5
ケのみ示す)程度入れ、比抵抗が2×106Ωcmの4
00mlの純水7中に浸漬する。カソードペレット5の
個数、純水7の量は電子放出物質が除去されて純水7中
に排出されることを考慮すれば前者は少なく、後者は多
い方がよく、また純水7はビーカー6より常にオーバー
フローさせておいても良い。
Then, as shown in FIG. 3, the impregnated cathode pellets 5 were placed in a 500 ml beaker 6 for 10 pieces (5 pieces).
4) with a specific resistance of 2 × 10 6 Ωcm
Immerse in 100 ml of pure water 7. The number of cathode pellets 5 and the amount of pure water 7 are preferably smaller in the former case and larger in the latter case in consideration of the fact that the electron emission material is removed and discharged into the pure water 7. It may be allowed to overflow at all times.

【0020】その後、超音波発振子8の入った容器9に
水10をはり、カソードペレット5を浸漬した上記のビ
ーカー6を入れ、200W,75KHzの条件で超音波
振動を加えて、余分な電子放出物質を除去した。これに
よりSc23を含む電子放出物質2を含浸するための空
孔(図1のb層内)を形成する。b層の厚さは純水7の
温度、超音波振動のパワー、周波数、時間等によって調
整することができる。
After that, water 10 is poured into a container 9 containing an ultrasonic oscillator 8 and the above beaker 6 in which the cathode pellet 5 is immersed is placed in the container 9. Ultrasonic vibration is applied under the conditions of 200 W and 75 KHz to remove excess electrons. The released material was removed. As a result, holes (in the layer b in FIG. 1) for impregnating the electron emitting substance 2 containing Sc 2 O 3 are formed. The thickness of layer b can be adjusted by the temperature of pure water 7, the power of ultrasonic vibration, the frequency, the time, and the like.

【0021】このようにして得られた、電子放出物質が
除去された多孔質W基体の部位(b層)に、BaO,C
aO,Al23を上記と同様のモル比4:1:1の割合
で配合し、且つSc23を10重量%添加してなる電子
放出物質を置き、真空中で1700℃に加熱溶融した。
なおSc23を含む電子放出物質1として上記と異なっ
たモル比のBaO,CaO及びAl23の材料や異なっ
た添加量のSc23を用いることができ、しかも材料に
応じて1700〜2000℃で加熱溶融することができ
る。この工程では、W基体の上部に置くSc23を含む
電子放出物質1の重量を適当に調節することにより、多
孔質W基体3の電子放出表面上に形成されるSc23
含む電子放出物質層の厚さ(図1−a層)を調節するこ
とができる。
BaO, C was added to the region (b layer) of the thus obtained porous W substrate from which the electron emitting substance was removed.
An electron-emitting substance prepared by blending aO and Al 2 O 3 in the same molar ratio of 4: 1: 1 as described above and adding Sc 2 O 3 at 10% by weight was placed and heated to 1700 ° C. in vacuum. Melted
Note Sc 2 O 3 may be used Sc 2 O 3 of the electron-emitting BaO above with different molar ratios as the substance 1, CaO and Al 2 O 3 material or different amount including, yet depending on the material It can be heated and melted at 1700 to 2000 ° C. In this process, by adjusting the weight of the electron emissive material 1 containing Sc 2 O 3 placed on top of the W substrate suitably comprises Sc 2 O 3 formed on the electron emission surface of the porous W base 3 The thickness of the electron emission material layer (FIG. 1-a layer) can be adjusted.

【0022】このようにしてできたカソードペレットを
Taカップ12に入れ、その後Taカップ12はTaス
リーブ13に抵抗溶接又はレーザー溶接される。溶接の
代わりにろう付けを用いても良い。カソードの加熱はW
芯線14をアルミナ被覆したヒーター15を用いて行
う。
The cathode pellet thus produced is put into the Ta cup 12, and then the Ta cup 12 is resistance-welded or laser-welded to the Ta sleeve 13. Brazing may be used instead of welding. Cathode heating is W
This is performed using a heater 15 in which the core wire 14 is coated with alumina.

【0023】このようにしてできた本発明の含浸形カソ
ードを用い、3極管方式でG2電極に200VのDC電
圧を印加し、カソードの動作温度即ち、ヒーター電圧を
1〜7Vまで連続的に変化させ、電子放出能力を測定し
た。その結果を図4に示した。本発明による電子放出特
性は、カソードの動作温度約750℃Bから空間電荷制
限電流となり、受像管等の電子管においては約800℃
Bで実用に耐える状態となる。しかしながら、従来のS
c系含浸形カソードの電子放出特性はいわゆる低電圧時
の電子放出特性の劣化が現われており、カソード動作温
度900℃Bにおいても実用に耐えない。なお従来のS
c系含浸形カソードとしては、特開昭59−79934
号公報に記載のようにSc23粒子が分散している耐熱
多孔質層とSc23が分散していない耐熱多孔質体から
なる複合多孔質基体にモル比で4:1:1のBaO,C
aO,Al23からなる電子放出物質を含浸させたカソ
ードを用いた。
Using the impregnated cathode of the present invention thus produced, a DC voltage of 200 V is applied to the G2 electrode in a triode method, and the operating temperature of the cathode, that is, the heater voltage is continuously increased to 1 to 7 V. It was changed and the electron emission capability was measured. The results are shown in Fig. 4. The electron emission characteristic according to the present invention is a space charge limited current from an operating temperature of the cathode of about 750 ° C. B, and about 800 ° C. in an electron tube such as a picture tube.
With B, it is ready for practical use. However, conventional S
electron emission characteristic of c-based impregnated cathode has appeared deterioration of the electron emission characteristics during the so-called low voltage, unpractical also in the cathode operating temperature 900 ° C. B. The conventional S
Japanese Patent Laid-Open No. 59-79934 discloses a c-type impregnated cathode.
As described in Japanese Patent Publication No. JP-A-2003-242, a composite porous substrate composed of a heat-resistant porous layer in which Sc 2 O 3 particles are dispersed and a heat-resistant porous body in which Sc 2 O 3 is not dispersed has a molar ratio of 4: 1: 1. BaO, C
A cathode impregnated with an electron emitting material composed of aO and Al 2 O 3 was used.

【0024】また、本発明の含浸形カソードの多孔質W
基体上層部を占める電子放出物質のうち、Sc23の添
加量を変えた場合の電子放出特性を図5に示す。基とな
る電子放出物質はBaO,CaO,Al23がモル比で
4:1:1であり、Sc23の添加量0〜50重量%ま
で変化させた。3極管方式でG2電極にPC電圧200
V印加し、カソード温度を850℃Bに固定し、放出電
流を測定した。その結果、Sc23の添加量が1〜30
重量%の範囲で有効であった。
Further, the porous W of the impregnated cathode of the present invention
FIG. 5 shows the electron emission characteristics when the addition amount of Sc 2 O 3 among the electron emission substances occupying the upper layer of the substrate is changed. The base electron emitting material was BaO, CaO, and Al 2 O 3 in a molar ratio of 4: 1: 1, and the addition amount of Sc 2 O 3 was changed to 0 to 50% by weight. PC voltage 200 on G2 electrode by triode method
V was applied, the cathode temperature was fixed at 850 ° C. B , and the emission current was measured. As a result, the added amount of Sc 2 O 3 is 1 to 30.
It was effective in the weight% range.

【0025】さらに、Sc23の添加量を5重量%と
し、多孔質タングステン基体の表面から内部へ向かっ
て、厚さ0.1mm(図1b層)がScを含む電子放出
物質となるようにし、多孔質タングステン基体の表面上
に形成される厚さ(図1a層)を変化させた場合の特性
を図6に示す。a部の厚さが50nm〜5μmの範囲で
有効であることがわかった。
Further, the addition amount of Sc 2 O 3 is set to 5% by weight so that the thickness of 0.1 mm (FIG. 1b layer) becomes an electron emitting substance containing Sc from the surface to the inside of the porous tungsten substrate. FIG. 6 shows the characteristics when the thickness (FIG. 1a layer) formed on the surface of the porous tungsten substrate is changed. It was found that the thickness of part a is effective in the range of 50 nm to 5 μm.

【0026】また、a層の厚さを1μmとし、多孔質タ
ングステン基体の表面から内部へ向かってScを含む電
子放出物質が含浸される厚さ(図1b層)を変化させた
場合の特性を図7に示す。b層の厚さが5μm〜0.3
mmで有効であることがわかった。
Further, the characteristics when the thickness of the layer a is set to 1 μm and the thickness (layer of FIG. 1b) in which the electron emitting substance containing Sc is impregnated from the surface to the inside of the porous tungsten substrate is changed. It shows in FIG. The thickness of layer b is 5 μm to 0.3
It has been found to be effective in mm.

【0027】また、上記実施例と同様に粒径約5μmの
W粉を用いて作製した空孔率約25%の多孔質W基体
に、BaO,CaO,Al23のモル比で4:1:1の
割合に配合してなる電子放出物質を1700℃に加熱し
溶融し、その後、図2と同様の装置を用いて超音波振動
(200W,75KHz)を5分間加えて電子放出物質
を基体表面から30μm除去した。このように、電子放
出物質を除去したカソードペレットをアルコール又はア
セトン等の有機溶媒中に浸漬した後、真空中500〜8
00℃で加熱することにより乾燥を行った。この乾燥が
必要な理由は、電子放出物質を除去した後、そのまま空
気中に放置すると電子放出物質が水酸化物に変質し、電
子放出特性を劣化するためである。
Further, a porous W substrate having a porosity of about 25%, which was produced by using W powder having a particle size of about 5 μm as in the above example, had a molar ratio of BaO, CaO and Al 2 O 3 of 4: The electron emitting substance mixed in a ratio of 1: 1 is heated to 1700 ° C. to be melted, and then ultrasonic vibration (200 W, 75 KHz) is applied for 5 minutes using the same device as in FIG. 30 μm was removed from the surface of the substrate. As described above, the cathode pellet from which the electron emission material has been removed is immersed in an organic solvent such as alcohol or acetone, and then 500 to 8 in vacuum.
Drying was performed by heating at 00 ° C. The reason why this drying is necessary is that if the electron emitting substance is removed and then left in the air as it is, the electron emitting substance is transformed into a hydroxide and the electron emitting characteristic is deteriorated.

【0028】このようにしてできたカソードペレットの
表面にIrをスパッタ法により被覆し、通常通り、3極
管方式で電子放出特性を評価した。
The cathode pellets thus formed were coated with Ir by a sputtering method, and the electron emission characteristics were evaluated by a triode method as usual.

【0029】その結果、図8に示すように従来の方法で
電子放出物質を除去したカソードの電子放出特性は、電
子放出物質を除去しないカソードの特性と比べて劣化し
ているが、本発明によるカソードの特性は電子放出物質
を除去しないカソードの特性と同等に良好であった。
As a result, as shown in FIG. 8, the electron emission characteristics of the cathode from which the electron emission material is removed by the conventional method are deteriorated as compared with the characteristics of the cathode without the electron emission material, but according to the present invention. The characteristics of the cathode were as good as those of the cathode that did not remove the electron emitting material.

【0030】また、BaあるいはBaOはカソードの活
性化工程中に最も蒸発量が多いので、1200℃で1時
間活性(電子管中でヒーター点灯)した場合の蒸発量を
調べたところ、電子放出物質の除去を行わない場合は5
〜10μg蒸発し、本発明によるカソードでは1〜3μ
gとなり、Ba/BaOの蒸発の低減にも効果があるこ
とがわかった。
Further, since Ba or BaO has the largest amount of evaporation during the activation process of the cathode, the amount of evaporation when activated (heated in the electron tube) at 1200 ° C. for 1 hour was examined. 5 if not removed
-10 μg evaporated, 1-3 μ for cathode according to the invention
Therefore, it was found that it was also effective in reducing the evaporation of Ba / BaO.

【0031】[0031]

【発明の効果】以上説明したように本発明によれば、空
間電荷制限電流領域で電子放出特性が改善されると共
に、グリッドエミッションの低減を図ることができる。
As described above, according to the present invention, the electron emission characteristics can be improved in the space charge limited current region and the grid emission can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る含浸形カソードの一実施例模式断
面図である。
FIG. 1 is a schematic sectional view of an embodiment of an impregnated cathode according to the present invention.

【図2】含浸形カソードの製造工程を示すフローチャー
トである。
FIG. 2 is a flowchart showing a manufacturing process of an impregnated cathode.

【図3】本発明の電子放出物質除去装置模式図である。FIG. 3 is a schematic diagram of an electron emission substance removing apparatus of the present invention.

【図4】本発明と従来のSc系含浸形カソードの電子放
出特性比較図である。
FIG. 4 is a comparison diagram of electron emission characteristics of the present invention and a conventional Sc-based impregnated cathode.

【図5】本発明の多孔質タングステン基体上層部電子放
出物質中のSc23添加量と電子放出特性の関係を示す
図である。
FIG. 5 is a diagram showing the relationship between the amount of Sc 2 O 3 added and the electron emission characteristics in the electron emission material of the upper layer of the porous tungsten substrate of the present invention.

【図6】本発明の模式図a層の厚さと電子放出特性の関
係を示す図である。
FIG. 6 is a diagram showing the relationship between the thickness of the layer “a” in the schematic diagram of the present invention and electron emission characteristics.

【図7】本発明の模式図b層の厚さと電子放出特性の関
係を示す図である。
FIG. 7 is a diagram showing the relationship between the thickness of a schematic layer b of the present invention and electron emission characteristics.

【図8】本発明カソード,電子放出物質を除去しないカ
ソード及び従来例として真空加熱により電子放出物質を
除去したカソードとの電子放出特性比較図である。
FIG. 8 is a comparison diagram of electron emission characteristics of the cathode of the present invention, a cathode in which an electron emitting substance is not removed, and a cathode in which an electron emitting substance is removed by vacuum heating as a conventional example.

【符号の説明】[Explanation of symbols]

1 Sc23を含む電子放出物質 2 Sc23を含まない電子放出物質 3 多孔質W基体 5 カソードペレット 6 ビーカー 7 純水 8 超音波発振子 9 容器 10 水 12 Taカップ 13 Taスリーブ 14 W芯線 15 アルミナ被覆ヒーターElectron emission material 2 Sc 2 O 3 does not contain an electron emission material 3 porous W base 5 cathode pellet 6 beakers 7 Pure water 8 ultrasonic oscillator 9 container 10 water 12 Ta cup 13 Ta sleeve 14 containing 1 Sc 2 O 3 W core 15 Alumina coated heater

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 耐熱性多孔質金属基体に電子放出物質を
含浸させてなる含浸形カソードにおいて、 前記電子放出物質含浸層の表面の第1層と、該第1層上
の第2層に、スカンジウムあるいは酸化スカンジウムが
含有されてなることを特徴とする含浸形カソード。
1. An impregnated cathode obtained by impregnating a heat-resistant porous metal substrate with an electron-emitting substance, comprising: a first layer on the surface of the electron-emitting substance-impregnated layer; and a second layer on the first layer. An impregnated cathode comprising scandium or scandium oxide.
【請求項2】 前記第1層と第2層に含有されるスカン
ジウムあるいは酸化スカンジウムが前記電子放出物質に
1〜30重量%含有していることを特徴とする請求項1
記載の含浸形カソード。
2. The electron-emitting substance contains scandium or scandium oxide contained in the first and second layers in an amount of 1 to 30% by weight.
The impregnated cathode described.
【請求項3】 前記第1層の厚さが5μm〜0.3mm
であり、一方前記第2層の厚さが50nm〜5μmであ
ることを特徴とする請求項1記載の含浸形カソード。
3. The thickness of the first layer is 5 μm to 0.3 mm.
2. The impregnated cathode according to claim 1, wherein the second layer has a thickness of 50 nm to 5 μm.
【請求項4】 耐熱性多孔質金属基体に、スカンジウム
あるいは酸化スカンジウムを含まない電子放出物質を含
浸する工程、 前記電子放出物質が含浸された耐熱性多孔質金属基体の
表層部から該電子放出物質を一部除去する工程、及び前
記電子放出物質を除去した該耐熱性多孔質金属基体の表
層部及びその上層にスカンジウムあるいは酸化スカンジ
ウムを含有せしめる工程を有することを特徴とする含浸
形カソードの製造方法。
4. A step of impregnating a heat-resistant porous metal substrate with an electron-emitting substance containing no scandium or scandium oxide, the electron-emitting substance from the surface layer of the heat-resistant porous metal substrate impregnated with the electron-emitting substance. And a step of allowing scandium or scandium oxide to be contained in the surface layer portion of the heat-resistant porous metal substrate from which the electron-emitting substance has been removed and in the upper layer thereof. .
【請求項5】 前記電子放出物質の除去を純水中で且つ
超音波振動により行うことを特徴とする請求項4記載の
含浸形カソードの製造方法。
5. The method for producing an impregnated cathode according to claim 4, wherein the electron emission material is removed in pure water by ultrasonic vibration.
【請求項6】 耐熱性多孔質金属基体に酸化バリウムを
含む電子放出物質を含浸し、該酸化バリウムを含む電子
放出物質の一部を前記耐熱性多孔質金属基体表面から除
去する工程を有する含浸形カソードの製造方法におい
て、 前記電子放出物質の除去を純水中で且つ超音波振動によ
り行うことを特徴とする含浸形カソードの製造方法。
6. An impregnation step of impregnating a heat-resistant porous metal substrate with an electron-emitting substance containing barium oxide, and removing a part of the electron-emitting substance containing barium oxide from the surface of the heat-resistant porous metal substrate. A method of manufacturing an impregnated cathode, comprising removing the electron-emitting substance in pure water by ultrasonic vibration.
JP31995292A 1992-11-30 1992-11-30 Impregnation type cathode and manufacture thereof Pending JPH06168660A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31995292A JPH06168660A (en) 1992-11-30 1992-11-30 Impregnation type cathode and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31995292A JPH06168660A (en) 1992-11-30 1992-11-30 Impregnation type cathode and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH06168660A true JPH06168660A (en) 1994-06-14

Family

ID=18116083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31995292A Pending JPH06168660A (en) 1992-11-30 1992-11-30 Impregnation type cathode and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH06168660A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810643A2 (en) * 1996-05-28 1997-12-03 Canon Kabushiki Kaisha Method for cleaning a porous surface of a semiconductor substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810643A2 (en) * 1996-05-28 1997-12-03 Canon Kabushiki Kaisha Method for cleaning a porous surface of a semiconductor substrate
EP0810643A3 (en) * 1996-05-28 1998-03-11 Canon Kabushiki Kaisha Method for cleaning a porous surface of a semiconductor substrate

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