JPS58197729A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58197729A
JPS58197729A JP8112782A JP8112782A JPS58197729A JP S58197729 A JPS58197729 A JP S58197729A JP 8112782 A JP8112782 A JP 8112782A JP 8112782 A JP8112782 A JP 8112782A JP S58197729 A JPS58197729 A JP S58197729A
Authority
JP
Japan
Prior art keywords
manufacturing
semiconductor device
heat treatment
layer
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8112782A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0261144B2 (enrdf_load_stackoverflow
Inventor
Tomonori Ishikawa
石川　知則
Tsuguo Inada
稲田　嗣夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8112782A priority Critical patent/JPS58197729A/ja
Publication of JPS58197729A publication Critical patent/JPS58197729A/ja
Publication of JPH0261144B2 publication Critical patent/JPH0261144B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP8112782A 1982-05-13 1982-05-13 半導体装置の製造方法 Granted JPS58197729A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8112782A JPS58197729A (ja) 1982-05-13 1982-05-13 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8112782A JPS58197729A (ja) 1982-05-13 1982-05-13 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58197729A true JPS58197729A (ja) 1983-11-17
JPH0261144B2 JPH0261144B2 (enrdf_load_stackoverflow) 1990-12-19

Family

ID=13737723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8112782A Granted JPS58197729A (ja) 1982-05-13 1982-05-13 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58197729A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5952679A (en) * 1996-10-17 1999-09-14 Denso Corporation Semiconductor substrate and method for straightening warp of semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5952679A (en) * 1996-10-17 1999-09-14 Denso Corporation Semiconductor substrate and method for straightening warp of semiconductor substrate

Also Published As

Publication number Publication date
JPH0261144B2 (enrdf_load_stackoverflow) 1990-12-19

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