JPS58197280A - ドライエツチング装置 - Google Patents
ドライエツチング装置Info
- Publication number
- JPS58197280A JPS58197280A JP7933282A JP7933282A JPS58197280A JP S58197280 A JPS58197280 A JP S58197280A JP 7933282 A JP7933282 A JP 7933282A JP 7933282 A JP7933282 A JP 7933282A JP S58197280 A JPS58197280 A JP S58197280A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- etching
- cassette
- chambers
- preliminary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims abstract description 94
- 238000009434 installation Methods 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 abstract description 31
- 239000004065 semiconductor Substances 0.000 abstract description 30
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000012423 maintenance Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7933282A JPS58197280A (ja) | 1982-05-11 | 1982-05-11 | ドライエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7933282A JPS58197280A (ja) | 1982-05-11 | 1982-05-11 | ドライエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58197280A true JPS58197280A (ja) | 1983-11-16 |
| JPS6339676B2 JPS6339676B2 (enrdf_load_stackoverflow) | 1988-08-05 |
Family
ID=13686930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7933282A Granted JPS58197280A (ja) | 1982-05-11 | 1982-05-11 | ドライエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58197280A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61247031A (ja) * | 1985-04-24 | 1986-11-04 | Hitachi Ltd | プラズマ処理装置のクリ−ニング方法 |
| JP2001035836A (ja) * | 1999-07-19 | 2001-02-09 | Matsushita Electronics Industry Corp | ドライエッチング方法および装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55141570A (en) * | 1979-04-18 | 1980-11-05 | Anelva Corp | Dry etching apparatus |
-
1982
- 1982-05-11 JP JP7933282A patent/JPS58197280A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55141570A (en) * | 1979-04-18 | 1980-11-05 | Anelva Corp | Dry etching apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61247031A (ja) * | 1985-04-24 | 1986-11-04 | Hitachi Ltd | プラズマ処理装置のクリ−ニング方法 |
| JP2001035836A (ja) * | 1999-07-19 | 2001-02-09 | Matsushita Electronics Industry Corp | ドライエッチング方法および装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6339676B2 (enrdf_load_stackoverflow) | 1988-08-05 |
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