JPS6339676B2 - - Google Patents

Info

Publication number
JPS6339676B2
JPS6339676B2 JP57079332A JP7933282A JPS6339676B2 JP S6339676 B2 JPS6339676 B2 JP S6339676B2 JP 57079332 A JP57079332 A JP 57079332A JP 7933282 A JP7933282 A JP 7933282A JP S6339676 B2 JPS6339676 B2 JP S6339676B2
Authority
JP
Japan
Prior art keywords
etching
chamber
chambers
semiconductor substrate
preliminary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57079332A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58197280A (ja
Inventor
Oonori Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7933282A priority Critical patent/JPS58197280A/ja
Publication of JPS58197280A publication Critical patent/JPS58197280A/ja
Publication of JPS6339676B2 publication Critical patent/JPS6339676B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP7933282A 1982-05-11 1982-05-11 ドライエツチング装置 Granted JPS58197280A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7933282A JPS58197280A (ja) 1982-05-11 1982-05-11 ドライエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7933282A JPS58197280A (ja) 1982-05-11 1982-05-11 ドライエツチング装置

Publications (2)

Publication Number Publication Date
JPS58197280A JPS58197280A (ja) 1983-11-16
JPS6339676B2 true JPS6339676B2 (enrdf_load_stackoverflow) 1988-08-05

Family

ID=13686930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7933282A Granted JPS58197280A (ja) 1982-05-11 1982-05-11 ドライエツチング装置

Country Status (1)

Country Link
JP (1) JPS58197280A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2656467B2 (ja) * 1985-04-24 1997-09-24 株式会社日立製作所 プラズマ処理方法
JP3696442B2 (ja) * 1999-07-19 2005-09-21 松下電器産業株式会社 ドライエッチング方法および装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55141570A (en) * 1979-04-18 1980-11-05 Anelva Corp Dry etching apparatus

Also Published As

Publication number Publication date
JPS58197280A (ja) 1983-11-16

Similar Documents

Publication Publication Date Title
JP2528962B2 (ja) 試料処理方法及び装置
JP2665202B2 (ja) 半導体ウェハ処理装置
US4442338A (en) Plasma etching apparatus
WO1994028578A1 (fr) Procede de traitement au plasma
JPS6052574A (ja) 連続スパツタ装置
JPH0522379B2 (enrdf_load_stackoverflow)
JPS6240728A (ja) ドライエツチング装置
JPS58207217A (ja) 真空中に於ける物体の移送方法
JPS6339676B2 (enrdf_load_stackoverflow)
JPH08181183A (ja) 試料の搬送装置
JPH10233388A (ja) プラズマクリーニング方法
JP2764027B2 (ja) 試料処理方法及び装置
JPH08195382A (ja) 半導体製造装置
JP3227812B2 (ja) ドライエッチング方法
JPH05144740A (ja) 真空処理装置
JP2544129B2 (ja) プラズマ処理装置
JPS631035A (ja) 減圧処理方法及び装置
JP2868767B2 (ja) 半導体ウエハ処理装置
JPS6233745B2 (enrdf_load_stackoverflow)
JP3490669B2 (ja) 不揮発性材料のエッチング方法および装置
JP2948290B2 (ja) 基板処理装置
JPS6286716A (ja) 金属と半導体の間にオ−ム型接続を形成するための方法及びその装置
JP2626782B2 (ja) 真空処理装置
JPH05230673A (ja) ドライエッチング装置
JPS5946127A (ja) 気体化学反応方法および装置