JPS58194332A - 半導体を光照射で加熱する方法 - Google Patents

半導体を光照射で加熱する方法

Info

Publication number
JPS58194332A
JPS58194332A JP56194575A JP19457581A JPS58194332A JP S58194332 A JPS58194332 A JP S58194332A JP 56194575 A JP56194575 A JP 56194575A JP 19457581 A JP19457581 A JP 19457581A JP S58194332 A JPS58194332 A JP S58194332A
Authority
JP
Japan
Prior art keywords
wafer
heating
circumference
heating source
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56194575A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6244847B2 (enExample
Inventor
Yoshiki Mimura
芳樹 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Ushio Inc
Original Assignee
Ushio Denki KK
Ushio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK, Ushio Inc filed Critical Ushio Denki KK
Priority to JP56194575A priority Critical patent/JPS58194332A/ja
Priority to US06/445,493 priority patent/US4469529A/en
Publication of JPS58194332A publication Critical patent/JPS58194332A/ja
Publication of JPS6244847B2 publication Critical patent/JPS6244847B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H10P34/422—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing using incoherent radiation

Landscapes

  • Resistance Heating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP56194575A 1981-12-04 1981-12-04 半導体を光照射で加熱する方法 Granted JPS58194332A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56194575A JPS58194332A (ja) 1981-12-04 1981-12-04 半導体を光照射で加熱する方法
US06/445,493 US4469529A (en) 1981-12-04 1982-11-30 Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194575A JPS58194332A (ja) 1981-12-04 1981-12-04 半導体を光照射で加熱する方法

Publications (2)

Publication Number Publication Date
JPS58194332A true JPS58194332A (ja) 1983-11-12
JPS6244847B2 JPS6244847B2 (enExample) 1987-09-22

Family

ID=16326811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56194575A Granted JPS58194332A (ja) 1981-12-04 1981-12-04 半導体を光照射で加熱する方法

Country Status (1)

Country Link
JP (1) JPS58194332A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593934A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS593933A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS5998518A (ja) * 1982-11-26 1984-06-06 Seiko Epson Corp ランプ・アニ−ル装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593934A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS593933A (ja) * 1982-06-30 1984-01-10 Ushio Inc 半導体ウエハ−を光照射で加熱する方法
JPS5998518A (ja) * 1982-11-26 1984-06-06 Seiko Epson Corp ランプ・アニ−ル装置

Also Published As

Publication number Publication date
JPS6244847B2 (enExample) 1987-09-22

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