JPS6331095B2 - - Google Patents

Info

Publication number
JPS6331095B2
JPS6331095B2 JP57111499A JP11149982A JPS6331095B2 JP S6331095 B2 JPS6331095 B2 JP S6331095B2 JP 57111499 A JP57111499 A JP 57111499A JP 11149982 A JP11149982 A JP 11149982A JP S6331095 B2 JPS6331095 B2 JP S6331095B2
Authority
JP
Japan
Prior art keywords
wafer
semiconductor wafer
temperature
outer periphery
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57111499A
Other languages
English (en)
Japanese (ja)
Other versions
JPS593934A (ja
Inventor
Yoshiki Mimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP11149982A priority Critical patent/JPS593934A/ja
Priority to US06/445,493 priority patent/US4469529A/en
Publication of JPS593934A publication Critical patent/JPS593934A/ja
Publication of JPS6331095B2 publication Critical patent/JPS6331095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP11149982A 1981-12-04 1982-06-30 半導体ウエハ−を光照射で加熱する方法 Granted JPS593934A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11149982A JPS593934A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法
US06/445,493 US4469529A (en) 1981-12-04 1982-11-30 Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11149982A JPS593934A (ja) 1982-06-30 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Publications (2)

Publication Number Publication Date
JPS593934A JPS593934A (ja) 1984-01-10
JPS6331095B2 true JPS6331095B2 (enExample) 1988-06-22

Family

ID=14562838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11149982A Granted JPS593934A (ja) 1981-12-04 1982-06-30 半導体ウエハ−を光照射で加熱する方法

Country Status (1)

Country Link
JP (1) JPS593934A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6111614B2 (ja) * 2012-11-22 2017-04-12 信越半導体株式会社 シリコンウェーハの熱処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764937A (en) * 1980-10-09 1982-04-20 Ushio Inc Annealing device
JPS58194332A (ja) * 1981-12-04 1983-11-12 Ushio Inc 半導体を光照射で加熱する方法

Also Published As

Publication number Publication date
JPS593934A (ja) 1984-01-10

Similar Documents

Publication Publication Date Title
US4535228A (en) Heater assembly and a heat-treatment method of semiconductor wafer using the same
US4581520A (en) Heat treatment machine for semiconductors
JPS58223320A (ja) 不純物拡散方法
JPS5959876A (ja) 光照射炉の運転方法
US4469529A (en) Method for heating semiconductor wafer by means of application of radiated light with supplemental circumferential heating
JPS5939031A (ja) フオスフオシリケ−トガラスをリフロ−するための方法
US4468259A (en) Uniform wafer heating by controlling light source and circumferential heating of wafer
US4504730A (en) Method for heating semiconductor wafer by means of application of radiated light
JPH0482215A (ja) ランプアニール装置
JPS6244848B2 (enExample)
JPS5917253A (ja) 半導体ウエハの熱処理方法
JPH0377657B2 (enExample)
JPS6331095B2 (enExample)
JPS6331096B2 (enExample)
JPS6331094B2 (enExample)
JPH025295B2 (enExample)
JPS6244847B2 (enExample)
JPS6331093B2 (enExample)
JPS59121832A (ja) 半導体ウエハ−を光照射で加熱する方法
JPH057860B2 (enExample)
JPH0240480Y2 (enExample)
JPS59139624A (ja) 試料の加熱方法
JPS59121821A (ja) 加熱器組立体
JPS6088432A (ja) ウエハ−のアニ−ル方法
JPH0572096B2 (enExample)