JPS58190894A - エピタキシヤル結晶成長装置 - Google Patents

エピタキシヤル結晶成長装置

Info

Publication number
JPS58190894A
JPS58190894A JP57071851A JP7185182A JPS58190894A JP S58190894 A JPS58190894 A JP S58190894A JP 57071851 A JP57071851 A JP 57071851A JP 7185182 A JP7185182 A JP 7185182A JP S58190894 A JPS58190894 A JP S58190894A
Authority
JP
Japan
Prior art keywords
substrate
vessel
temperature
crystal layer
reaction tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57071851A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0249278B2 (enExample
Inventor
Kenji Maruyama
研二 丸山
Michiharu Ito
伊藤　道春
Mitsuo Yoshikawa
吉河　満男
Tomoshi Ueda
知史 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57071851A priority Critical patent/JPS58190894A/ja
Publication of JPS58190894A publication Critical patent/JPS58190894A/ja
Publication of JPH0249278B2 publication Critical patent/JPH0249278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP57071851A 1982-04-28 1982-04-28 エピタキシヤル結晶成長装置 Granted JPS58190894A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57071851A JPS58190894A (ja) 1982-04-28 1982-04-28 エピタキシヤル結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57071851A JPS58190894A (ja) 1982-04-28 1982-04-28 エピタキシヤル結晶成長装置

Publications (2)

Publication Number Publication Date
JPS58190894A true JPS58190894A (ja) 1983-11-07
JPH0249278B2 JPH0249278B2 (enExample) 1990-10-29

Family

ID=13472449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57071851A Granted JPS58190894A (ja) 1982-04-28 1982-04-28 エピタキシヤル結晶成長装置

Country Status (1)

Country Link
JP (1) JPS58190894A (enExample)

Also Published As

Publication number Publication date
JPH0249278B2 (enExample) 1990-10-29

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