JPH0249278B2 - - Google Patents
Info
- Publication number
- JPH0249278B2 JPH0249278B2 JP57071851A JP7185182A JPH0249278B2 JP H0249278 B2 JPH0249278 B2 JP H0249278B2 JP 57071851 A JP57071851 A JP 57071851A JP 7185182 A JP7185182 A JP 7185182A JP H0249278 B2 JPH0249278 B2 JP H0249278B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- substrate
- reaction tube
- epitaxial growth
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57071851A JPS58190894A (ja) | 1982-04-28 | 1982-04-28 | エピタキシヤル結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57071851A JPS58190894A (ja) | 1982-04-28 | 1982-04-28 | エピタキシヤル結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58190894A JPS58190894A (ja) | 1983-11-07 |
| JPH0249278B2 true JPH0249278B2 (enExample) | 1990-10-29 |
Family
ID=13472449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57071851A Granted JPS58190894A (ja) | 1982-04-28 | 1982-04-28 | エピタキシヤル結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58190894A (enExample) |
-
1982
- 1982-04-28 JP JP57071851A patent/JPS58190894A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58190894A (ja) | 1983-11-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0064514B1 (en) | Process and apparatus for growing mercury cadmium telluride layer by liquid phase epitaxy from mercury-rich melt | |
| US3873341A (en) | Rapid conversion of an iron oxide film | |
| US3507625A (en) | Apparatus for producing binary crystalline compounds | |
| US4642142A (en) | Process for making mercury cadmium telluride | |
| US3853487A (en) | Method of forming crystals by the control of volatile constituent diffusion path distances through a melt | |
| GB1031517A (en) | Methods of producing vapours having at least two components | |
| JPS58190894A (ja) | エピタキシヤル結晶成長装置 | |
| JPS58138038A (ja) | 液相エピタキシヤル成長装置 | |
| JPS5913697A (ja) | 液相エピタキシヤル成長装置 | |
| JPS5812386A (ja) | 半導体レ−ザ素子の製造方法 | |
| JPS582036A (ja) | 半導体結晶の製造方法 | |
| JPS5934137Y2 (ja) | 液相エピタキシヤル成長装置 | |
| JPH0338736B2 (enExample) | ||
| JP2700123B2 (ja) | HgCdTeの液相エピタキシヤル成長方法及びその装置 | |
| JPH0322913Y2 (enExample) | ||
| JPS5918645A (ja) | 液相エピタキシヤル成長装置 | |
| JPH0796477B2 (ja) | 気相成長方法及び装置 | |
| JPS5921030A (ja) | 液相エピタキシヤル成長装置 | |
| JPH02102192A (ja) | 液相エピタキシャル成長装置 | |
| JPH0483793A (ja) | 気相成長装置 | |
| JPS58110492A (ja) | 液相エピタキシヤル成長方法 | |
| KR790001973B1 (ko) | 액상(液相) 성장방법 | |
| JPS5918644A (ja) | 液相エピタキシヤル成長装置 | |
| JPH027918B2 (enExample) | ||
| JPS58131738A (ja) | 液相エピタキシヤル成長装置 |