JPS58190029A - 投影マスク - Google Patents

投影マスク

Info

Publication number
JPS58190029A
JPS58190029A JP57162423A JP16242382A JPS58190029A JP S58190029 A JPS58190029 A JP S58190029A JP 57162423 A JP57162423 A JP 57162423A JP 16242382 A JP16242382 A JP 16242382A JP S58190029 A JPS58190029 A JP S58190029A
Authority
JP
Japan
Prior art keywords
layer
mask
silicon
ion
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57162423A
Other languages
English (en)
Japanese (ja)
Other versions
JPS627693B2 (show.php
Inventor
ハラルド・ボ−レン
ベテル・ネ−ミツツ
ヨハン・クレシユナ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58190029A publication Critical patent/JPS58190029A/ja
Publication of JPS627693B2 publication Critical patent/JPS627693B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP57162423A 1981-10-30 1982-09-20 投影マスク Granted JPS58190029A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP81109370A EP0078336B1 (de) 1981-10-30 1981-10-30 Schattenwurfmaske für die Ionenimplantation und die Ionenstrahllithographie
EP81109370.7 1981-10-30

Publications (2)

Publication Number Publication Date
JPS58190029A true JPS58190029A (ja) 1983-11-05
JPS627693B2 JPS627693B2 (show.php) 1987-02-18

Family

ID=8187989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57162423A Granted JPS58190029A (ja) 1981-10-30 1982-09-20 投影マスク

Country Status (4)

Country Link
US (1) US4448865A (show.php)
EP (1) EP0078336B1 (show.php)
JP (1) JPS58190029A (show.php)
DE (1) DE3176643D1 (show.php)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185919A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置の製造方法
JPH0992604A (ja) * 1995-09-27 1997-04-04 Nikon Corp レチクル保持装置および保持方法
JP2004158527A (ja) * 2002-11-05 2004-06-03 Hoya Corp イオン注入用ステンシルマスク
US7745073B2 (en) 2000-10-31 2010-06-29 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587184A (en) * 1983-07-27 1986-05-06 Siemens Aktiengesellschaft Method for manufacturing accurate structures with a high aspect ratio and particularly for manufacturing X-ray absorber masks
US4837129A (en) * 1984-09-14 1989-06-06 Kollmorgen Technologies Corp. Process for producing conductor patterns on three dimensional articles
FR2577073B1 (fr) * 1985-02-06 1987-09-25 Commissariat Energie Atomique Dispositif matriciel de detection d'un rayonnement lumineux a ecrans froids individuels integres dans un substrat et son procede de fabrication
ATA331285A (de) * 1985-11-13 1988-11-15 Ims Ionen Mikrofab Syst Verfahren zur herstellung einer transmissionsmaske
EP0244496B1 (de) * 1986-05-06 1991-01-16 Ibm Deutschland Gmbh Maske für die Ionen-, Elektronen- oder Röntgenstrahllithographie und Verfahren zur ihrer Herstellung
US4811089A (en) * 1987-04-23 1989-03-07 The Mead Corporation High resolution full color exposure device using an electronically generated mask
DE3730642A1 (de) * 1987-09-11 1989-03-30 Fraunhofer Ges Forschung Lochmaske fuer die verwendung bei ionen- oder elektronenoptischen verfahren sowie verfahren zur herstellung einer solchen lochmaske
US5049460A (en) * 1988-05-31 1991-09-17 Siemens Aktiengesellschaft Method for producing beam-shaping diaphragms for lithographic devices
US4994336A (en) * 1988-05-31 1991-02-19 Siemens Aktiengesellschaft Method for manufacturing a control plate for a lithographic device
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same
US4919749A (en) * 1989-05-26 1990-04-24 Nanostructures, Inc. Method for making high resolution silicon shadow masks
JPH0784357A (ja) * 1993-09-14 1995-03-31 Nikon Corp 露光マスクおよび投影露光方法
JPH0934103A (ja) * 1995-05-17 1997-02-07 Nikon Corp 荷電粒子線転写用マスク
US6368752B1 (en) * 1996-10-29 2002-04-09 Motorola, Inc. Low stress hard mask formation method during refractory radiation mask fabrication
US6063246A (en) * 1997-05-23 2000-05-16 University Of Houston Method for depositing a carbon film on a membrane
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
US6297169B1 (en) * 1998-07-27 2001-10-02 Motorola, Inc. Method for forming a semiconductor device using a mask having a self-assembled monolayer
US6187481B1 (en) 1998-08-20 2001-02-13 Micron Technology, Inc. Semiconductive material stencil mask and methods of manufacturing stencil masks from semiconductive material, utilizing different dopants
US6300017B1 (en) * 1998-08-20 2001-10-09 Micron Technology, Inc. Stencil masks and methods of manufacturing stencil masks
DE10006523A1 (de) * 2000-02-15 2001-08-23 Infineon Technologies Ag Implantationsmaske für Hochenergieionenimplantation
DE10039644A1 (de) * 2000-08-14 2002-02-28 Rubitec Gesellschaft Fuer Innovation & Technologie Ruhr Univ Bochum Mbh Lochmaske und Verfahren zur Herstellung einer Lochmaske
DE10062016C2 (de) * 2000-12-13 2002-10-24 Infineon Technologies Ag Silizium-Kontaktmaske zur Ionenimplantation, Verwendung einer solchen Kontaktmaske, Verfahren zur Herstellung einer solchen Kontaktmaske, Verwendung eines derartigen Herstellungsverfahrens und Verfahren zur Herstellung eines Wafers mit einer solchen Maske
JPWO2004003985A1 (ja) * 2002-06-26 2005-11-04 ソニー株式会社 マスクおよびその製造方法並びに半導体装置の製造方法
EP1582922B1 (en) * 2004-04-01 2008-11-26 STMicroelectronics S.r.l. Nonlithographic method of defining geometries for plasma and/or ion implantation treatments on a semiconductor wafer
WO2009152375A1 (en) 2008-06-11 2009-12-17 Solar Implant Technologies Inc. Solar cell fabrication using implantation
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US8216923B2 (en) 2010-10-01 2012-07-10 Varian Semiconductor Equipment Associates, Inc. Integrated shadow mask/carrier for patterned ion implantation
TWI506719B (zh) 2011-11-08 2015-11-01 Intevac Inc 基板處理系統及方法
ES2446465B1 (es) * 2012-06-21 2015-03-10 Consejo Superior Investigacion Membrana electrolitica de oxido solido soportada sobre nervios de silicio dopado para aplicaciones en micro pilas de combustible de oxido solido
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
US9401450B2 (en) 2013-12-09 2016-07-26 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US9577134B2 (en) 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
US9263625B2 (en) 2014-06-30 2016-02-16 Sunpower Corporation Solar cell emitter region fabrication using ion implantation
US20160284913A1 (en) 2015-03-27 2016-09-29 Staffan WESTERBERG Solar cell emitter region fabrication using substrate-level ion implantation
KR102596854B1 (ko) * 2017-08-08 2023-11-02 에이에스엠엘 네델란즈 비.브이. 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법
US11444244B2 (en) 2018-04-19 2022-09-13 Ningbo Semiconductor International Corporation Mask plate and fabrication method thereof
CN108649142B (zh) * 2018-04-19 2021-04-06 中芯集成电路（宁波）有限公司 一种掩膜版及其制造方法
CN108611592B (zh) * 2018-04-19 2021-06-01 中芯集成电路（宁波）有限公司 一种掩膜版及其制造方法
CN108546912B (zh) * 2018-05-03 2020-09-18 中芯集成电路（宁波）有限公司 掩膜版及其制作方法
CN108611593B (zh) * 2018-05-03 2020-05-19 中芯集成电路（宁波）有限公司 掩膜版及其制作方法
CN108666448B (zh) * 2018-05-03 2020-02-11 中芯集成电路（宁波）有限公司 掩膜版及其制作方法
CN108624841B (zh) * 2018-05-03 2020-10-13 中芯集成电路（宁波）有限公司 掩膜版及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3971684A (en) * 1973-12-03 1976-07-27 Hewlett-Packard Company Etching thin film circuits and semiconductor chips
IT1109829B (it) * 1977-07-05 1985-12-23 Ibm Processo di fabbricazione di cercuiti integrati
JPS6031909B2 (ja) * 1977-08-17 1985-07-25 株式会社日立製作所 エツチング加工法
DE2922416A1 (de) * 1979-06-01 1980-12-11 Ibm Deutschland Schattenwurfmaske zum strukturieren von oberflaechenbereichen und verfahren zu ihrer herstellung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185919A (ja) * 1988-01-21 1989-07-25 Fujitsu Ltd 半導体装置の製造方法
JPH0992604A (ja) * 1995-09-27 1997-04-04 Nikon Corp レチクル保持装置および保持方法
US7745073B2 (en) 2000-10-31 2010-06-29 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same
JP2004158527A (ja) * 2002-11-05 2004-06-03 Hoya Corp イオン注入用ステンシルマスク

Also Published As

Publication number Publication date
EP0078336A1 (de) 1983-05-11
US4448865A (en) 1984-05-15
JPS627693B2 (show.php) 1987-02-18
DE3176643D1 (en) 1988-03-10
EP0078336B1 (de) 1988-02-03

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