JPS58182220A - タンデムアモルファス光起電力セルを連続的に製造する為の方法及び装置 - Google Patents

タンデムアモルファス光起電力セルを連続的に製造する為の方法及び装置

Info

Publication number
JPS58182220A
JPS58182220A JP58045838A JP4583883A JPS58182220A JP S58182220 A JPS58182220 A JP S58182220A JP 58045838 A JP58045838 A JP 58045838A JP 4583883 A JP4583883 A JP 4583883A JP S58182220 A JPS58182220 A JP S58182220A
Authority
JP
Japan
Prior art keywords
chamber
deposition
substrate material
substrate
chambers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58045838A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0432533B2 (OSRAM
Inventor
マサツグ・イズ
ハ−バ−ト・シ−・オブシンスキ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS58182220A publication Critical patent/JPS58182220A/ja
Publication of JPH0432533B2 publication Critical patent/JPH0432533B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
JP58045838A 1982-01-24 1983-03-18 タンデムアモルファス光起電力セルを連続的に製造する為の方法及び装置 Granted JPS58182220A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US460629 1982-01-24
US06/359,825 US4492181A (en) 1982-03-19 1982-03-19 Apparatus for continuously producing tandem amorphous photovoltaic cells
US359825 1982-03-19

Publications (2)

Publication Number Publication Date
JPS58182220A true JPS58182220A (ja) 1983-10-25
JPH0432533B2 JPH0432533B2 (OSRAM) 1992-05-29

Family

ID=23415439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58045838A Granted JPS58182220A (ja) 1982-01-24 1983-03-18 タンデムアモルファス光起電力セルを連続的に製造する為の方法及び装置

Country Status (3)

Country Link
US (1) US4492181A (OSRAM)
JP (1) JPS58182220A (OSRAM)
ZA (1) ZA831692B (OSRAM)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
JPS617624A (ja) * 1984-06-22 1986-01-14 Fuji Xerox Co Ltd 密着型イメージセンサ
JPS61288074A (ja) * 1985-06-17 1986-12-18 Canon Inc Ｃｖｄ法による堆積膜形成方法
JPS63304034A (ja) * 1987-06-05 1988-12-12 Hitachi Ltd 真空連続処理装置
US6562400B2 (en) 2000-05-01 2003-05-13 Canon Kabushiki Kaisha Method and apparatus for forming deposition film, and method for treating substrate
EP1589130B1 (de) * 2004-04-13 2009-07-29 Applied Materials GmbH & Co. KG Führungsanordnung mit mindestens einer Führungswalze für die Führung von Bändern in Bandbehandlungsanlagen
WO2011077901A1 (ja) * 2009-12-24 2011-06-30 富士電機ホールディングス株式会社 薄膜積層体の製造装置

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US5258075A (en) * 1983-06-30 1993-11-02 Canon Kabushiki Kaisha Process for producing photoconductive member and apparatus for producing the same
US4664951A (en) * 1985-07-31 1987-05-12 Energy Conversion Devices, Inc. Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration
US4663828A (en) * 1985-10-11 1987-05-12 Energy Conversion Devices, Inc. Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
US4663829A (en) * 1985-10-11 1987-05-12 Energy Conversion Devices, Inc. Process and apparatus for continuous production of lightweight arrays of photovoltaic cells
US4920917A (en) * 1987-03-18 1990-05-01 Teijin Limited Reactor for depositing a layer on a moving substrate
KR910005158B1 (ko) * 1987-06-05 1991-07-23 가부시기가이샤 히다찌세이사꾸쇼 진공연속 처리장치
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
US5637537A (en) * 1991-06-27 1997-06-10 United Solar Systems Corporation Method of severing a thin film semiconductor device
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
JP2771414B2 (ja) * 1992-12-28 1998-07-02 キヤノン株式会社 太陽電池の製造方法
JP2923193B2 (ja) * 1993-12-30 1999-07-26 キヤノン株式会社 光電変換素子の製造方法
DE9407482U1 (de) * 1994-05-05 1994-10-06 Balzers und Leybold Deutschland Holding AG, 63450 Hanau Funktionseinrichtung für eine Vakuumanlage für die Behandlung von scheibenförmigen Werkstücken
JP3651932B2 (ja) * 1994-08-24 2005-05-25 キヤノン株式会社 光起電力素子用裏面反射層及びその形成方法並びに光起電力素子及びその製造方法
JP3308785B2 (ja) * 1995-11-10 2002-07-29 キヤノン株式会社 光起電力素子
US5986204A (en) * 1996-03-21 1999-11-16 Canon Kabushiki Kaisha Photovoltaic cell
US7001640B2 (en) * 2000-05-31 2006-02-21 Canon Kabushiki Kaisha Apparatus and method for forming deposited film
JP2002350925A (ja) * 2001-05-30 2002-12-04 Fuji Photo Film Co Ltd カメラの絞り切換え装置
US6849134B2 (en) * 2001-09-10 2005-02-01 Kemet Electronics Corporation Minimum volume oven for producing uniform pyrolytic oxide coatings on capacitor anodes
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
US8304019B1 (en) * 2004-02-19 2012-11-06 Nanosolar Inc. Roll-to-roll atomic layer deposition method and system
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
WO2006053128A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
WO2006053218A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition
US7541227B2 (en) * 2005-06-02 2009-06-02 Hewlett-Packard Development Company, L.P. Thin film devices and methods for forming the same
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
JP2007302928A (ja) * 2006-05-10 2007-11-22 Sumitomo Electric Ind Ltd 長尺基材連続処理用の搬送機構、それを用いた処理装置およびそれによって得られる長尺部材
US20080023059A1 (en) * 2006-07-25 2008-01-31 Basol Bulent M Tandem solar cell structures and methods of manufacturing same
US20080175993A1 (en) * 2006-10-13 2008-07-24 Jalal Ashjaee Reel-to-reel reaction of a precursor film to form solar cell absorber
US8323735B2 (en) * 2006-10-13 2012-12-04 Solopower, Inc. Method and apparatus to form solar cell absorber layers with planar surface
US9103033B2 (en) * 2006-10-13 2015-08-11 Solopower Systems, Inc. Reel-to-reel reaction of precursor film to form solar cell absorber
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
US8997687B2 (en) * 2006-12-28 2015-04-07 Exatec Llc Apparatus and method for plasma arc coating
US7829195B2 (en) * 2006-12-31 2010-11-09 Intel Corporation Fluorination pre-treatment of heat spreader attachment indium thermal interface material
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US8409418B2 (en) * 2009-02-06 2013-04-02 Solopower, Inc. Enhanced plating chemistries and methods for preparation of group IBIIIAVIA thin film solar cell absorbers
US8425753B2 (en) * 2008-05-19 2013-04-23 Solopower, Inc. Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
KR101494153B1 (ko) * 2007-12-21 2015-02-23 주성엔지니어링(주) 박막형 태양전지 및 그 제조방법
US20090255467A1 (en) * 2008-04-15 2009-10-15 Global Solar Energy, Inc. Apparatus and methods for manufacturing thin-film solar cells
US20110036396A1 (en) * 2008-04-30 2011-02-17 The Regents Of The University Of California Method and apparatus for fabricating optoelectromechanical devices by structural transfer using re-usable substrate
US20100226629A1 (en) * 2008-07-21 2010-09-09 Solopower, Inc. Roll-to-roll processing and tools for thin film solar cell manufacturing
GB2462846B (en) * 2008-08-22 2013-03-13 Tisics Ltd Coated filaments and their manufacture
US8061686B2 (en) * 2009-04-03 2011-11-22 Uniter Solar Ovonic LLC Pinch valve
US20100252605A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Web support assembly
US20100252602A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Continuous processing system with pinch valve
US20100252606A1 (en) * 2009-04-03 2010-10-07 United Solar Ovonic Llc Roll-to-roll deposition apparatus with improved web transport system
JP5460236B2 (ja) * 2009-10-22 2014-04-02 株式会社神戸製鋼所 Ｃｖｄ成膜装置
US8247255B2 (en) * 2009-12-15 2012-08-21 PrimeStar, Inc. Modular system and process for continuous deposition of a thin film layer on a substrate
US9159851B2 (en) 2010-05-26 2015-10-13 The University Of Toledo Photovoltaic structures having a light scattering interface layer and methods of making the same
WO2013116215A1 (en) * 2012-01-31 2013-08-08 First Solar, Inc. Integrated vapor transport deposition method and system
US9601651B2 (en) * 2013-06-21 2017-03-21 Muehlbauer GmbH & Co. KG Method and apparatus for manufacturing a solar module strand and a solar module strand of flexible solar cells
TWI558835B (zh) * 2014-02-26 2016-11-21 qing-feng Chen Continuous physical vacuum coating equipment
US20160186320A1 (en) * 2014-12-26 2016-06-30 Metal Industries Research And Development Centre Apparatus for continuously forming a film through chemical vapor deposition
KR102622868B1 (ko) * 2016-11-28 2024-01-08 엘지디스플레이 주식회사 열충격이 방지된 롤투롤 제조장치
KR102690478B1 (ko) * 2016-11-30 2024-07-31 엘지디스플레이 주식회사 롤투롤 기판증착장치

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
JPS617624A (ja) * 1984-06-22 1986-01-14 Fuji Xerox Co Ltd 密着型イメージセンサ
JPS61288074A (ja) * 1985-06-17 1986-12-18 Canon Inc Ｃｖｄ法による堆積膜形成方法
JPS63304034A (ja) * 1987-06-05 1988-12-12 Hitachi Ltd 真空連続処理装置
US6562400B2 (en) 2000-05-01 2003-05-13 Canon Kabushiki Kaisha Method and apparatus for forming deposition film, and method for treating substrate
US6811816B2 (en) 2000-05-01 2004-11-02 Canon Kabushiki Kaisha Method and apparatus for forming deposition film, and method for treating substrate
EP1589130B1 (de) * 2004-04-13 2009-07-29 Applied Materials GmbH & Co. KG Führungsanordnung mit mindestens einer Führungswalze für die Führung von Bändern in Bandbehandlungsanlagen
WO2011077901A1 (ja) * 2009-12-24 2011-06-30 富士電機ホールディングス株式会社 薄膜積層体の製造装置

Also Published As

Publication number Publication date
US4492181A (en) 1985-01-08
ZA831692B (en) 1984-01-25
JPH0432533B2 (OSRAM) 1992-05-29

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