JPS58180063A - Thin film transistor - Google Patents

Thin film transistor

Info

Publication number
JPS58180063A
JPS58180063A JP6315782A JP6315782A JPS58180063A JP S58180063 A JPS58180063 A JP S58180063A JP 6315782 A JP6315782 A JP 6315782A JP 6315782 A JP6315782 A JP 6315782A JP S58180063 A JPS58180063 A JP S58180063A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
transistors
thin film
drain
source
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6315782A
Other versions
JPH0544196B2 (en )
Inventor
Toshimoto Kodaira
Toshihiko Mano
Hiroyuki Oshima
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3685Details of drivers for data electrodes
    • G09G3/3688Details of drivers for data electrodes suitable for active matrices only
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/13624Active matrix addressed cells having more than one switching element per pixel
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0823Several active elements per pixel in active matrix panels used to establish symmetry in driving, e.g. with polarity inversion
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0209Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
    • G09G2320/0214Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display with crosstalk due to leakage current of pixel switch in active matrix panels

Abstract

PURPOSE:To markedly reduce the OFF current of the titled transistor without an ON current by a method wherein a plurality of transistors are connected in series, the electrode located at both ends of said transistors are forme common as a source electrode and a drain electrode, and the specific transistors are euqally formed in shape. CONSTITUTION:The titled thin film transistor consists of a source S, a drain D, a gate G and N pieces of thin film transistors to be connected in series. The gates of the N pieces of thin film transistors are made into a gate by forming them common. Besides, the thin film transistor of i (i=1, 2...N) and (N-i+1) are equally formed in shape. According to this constitution, transistors can be arranged symmetrically with the source and the drain, thereby enabling the transistors to have their characteristics unchanged even when the source is replaced with the drain.
JP6315782A 1982-04-15 1982-04-15 Expired - Lifetime JPH0544196B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6315782A JPH0544196B2 (en) 1982-04-15 1982-04-15

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP6315782A JPH0544196B2 (en) 1982-04-15 1982-04-15
FR8304924A FR2524714B1 (en) 1982-04-01 1983-03-25 A thin film transistor
GB8308614A GB2117970B (en) 1982-04-01 1983-03-29 Thin film transistor integrated circuit
US06481087 US4623908A (en) 1982-04-01 1983-03-31 Thin film transistors
DE19833311923 DE3311923C2 (en) 1982-04-01 1983-03-31
FR8310563A FR2547955B2 (en) 1982-04-01 1983-06-27 A thin film transistor

Publications (2)

Publication Number Publication Date
JPS58180063A true true JPS58180063A (en) 1983-10-21
JPH0544196B2 JPH0544196B2 (en) 1993-07-05

Family

ID=13221112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6315782A Expired - Lifetime JPH0544196B2 (en) 1982-04-15 1982-04-15

Country Status (1)

Country Link
JP (1) JPH0544196B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0589478A3 (en) * 1992-09-25 1994-11-17 Sony Corp Liquid crystal display device.
US6885027B2 (en) 1994-06-02 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
DE19605669B4 (en) * 1995-02-15 2007-06-14 Semiconductor Energy Laboratory Co., Ltd., Atsugi An active matrix display device
DE19605670B4 (en) * 1995-02-15 2007-06-28 Semiconductor Energy Laboratory Co., Ltd., Atsugi Active matrix display

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105358950B (en) 2013-07-10 2018-04-20 积水化学工业株式会社 Piezoelectric sensors

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0589478A3 (en) * 1992-09-25 1994-11-17 Sony Corp Liquid crystal display device.
US5412493A (en) * 1992-09-25 1995-05-02 Sony Corporation Liquid crystal display device having LDD structure type thin film transistors connected in series
US6885027B2 (en) 1994-06-02 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7148506B2 (en) 1994-06-02 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
US7459724B2 (en) 1994-06-02 2008-12-02 Semiconductor Energy Laboratory Co., Ltd. Active matrix display and electrooptical device
DE19605669B4 (en) * 1995-02-15 2007-06-14 Semiconductor Energy Laboratory Co., Ltd., Atsugi An active matrix display device
DE19605670B4 (en) * 1995-02-15 2007-06-28 Semiconductor Energy Laboratory Co., Ltd., Atsugi Active matrix display

Also Published As

Publication number Publication date Type
JPH0544196B2 (en) 1993-07-05 grant

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