JPS5821863A - Active matrix substrate - Google Patents

Active matrix substrate

Info

Publication number
JPS5821863A
JPS5821863A JP56121113A JP12111381A JPS5821863A JP S5821863 A JPS5821863 A JP S5821863A JP 56121113 A JP56121113 A JP 56121113A JP 12111381 A JP12111381 A JP 12111381A JP S5821863 A JPS5821863 A JP S5821863A
Authority
JP
Japan
Prior art keywords
gate
electrode
transistor
forming
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56121113A
Other languages
Japanese (ja)
Other versions
JPH0330308B2 (en
Inventor
Shinji Morozumi
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP56121113A priority Critical patent/JPH0330308B2/ja
Publication of JPS5821863A publication Critical patent/JPS5821863A/en
Publication of JPH0330308B2 publication Critical patent/JPH0330308B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode

Abstract

PURPOSE:To reduce the power consumption of an active matrix substrate by forming the substrate on a transparent substrate and a transistor with a gate electrode downwardly and with a channel upwardly and forming a condenser with the gate insulator of the gate electrode and with a liquid crystal drive electrode. CONSTITUTION:On a transparent electrode 33 are formed a thin Si film 28 forming the source, drain and channel of a transistor, a thin Si film or the like forming a gate line becoming the gate of the transistor, or simultaneous wiring layer 26 and a GND line 27, and further a data line 25 formed of a transparent low resistance material such as an NESA film like BnO2, metal having a thickness smaller than several 100Angstrom , and a liquid drive electrode 31. The superposed part of the line 27 and the electrode becomes a charge holding capacitor. An N<+> type diffusion is performed in the source and drain 34, 35 of the transistor, and a channel 30 is existed through a gate insulating film 36 under a gate electrode 38.
JP56121113A 1981-07-31 1981-07-31 Expired - Lifetime JPH0330308B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56121113A JPH0330308B2 (en) 1981-07-31 1981-07-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56121113A JPH0330308B2 (en) 1981-07-31 1981-07-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6202193A Division JP2668317B2 (en) 1993-03-22 1993-03-22 Active matrix panel

Publications (2)

Publication Number Publication Date
JPS5821863A true JPS5821863A (en) 1983-02-08
JPH0330308B2 JPH0330308B2 (en) 1991-04-26

Family

ID=14803199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56121113A Expired - Lifetime JPH0330308B2 (en) 1981-07-31 1981-07-31

Country Status (1)

Country Link
JP (1) JPH0330308B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179723A (en) * 1984-02-27 1985-09-13 Sharp Corp Liquid crystal projection device
EP0482737A2 (en) * 1990-09-27 1992-04-29 Sharp Kabushiki Kaisha Active matrix display device
US5162901A (en) * 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
US5469025A (en) * 1990-09-27 1995-11-21 Sharp Kabushiki Kaisha Fault tolerant active matrix display device
USRE36725E (en) * 1984-10-22 2000-06-06 Seiko Epson Corporation Projection-type display device
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106193A (en) * 1978-02-08 1979-08-20 Sharp Corp Driving method for matrix type liquid crystal display unit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54106193A (en) * 1978-02-08 1979-08-20 Sharp Corp Driving method for matrix type liquid crystal display unit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60179723A (en) * 1984-02-27 1985-09-13 Sharp Corp Liquid crystal projection device
JPH0435048B2 (en) * 1984-02-27 1992-06-09 Sharp Kk
USRE36725E (en) * 1984-10-22 2000-06-06 Seiko Epson Corporation Projection-type display device
US5162901A (en) * 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
EP0482737A2 (en) * 1990-09-27 1992-04-29 Sharp Kabushiki Kaisha Active matrix display device
US5469025A (en) * 1990-09-27 1995-11-21 Sharp Kabushiki Kaisha Fault tolerant active matrix display device
US5508591A (en) * 1990-09-27 1996-04-16 Sharp Kabushiki Kaisha Active matrix display device
US7381598B2 (en) 1993-08-12 2008-06-03 Semiconductor Energy Laboratory Co., Ltd. Insulated gate semiconductor device and process for fabricating the same

Also Published As

Publication number Publication date
JPH0330308B2 (en) 1991-04-26

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