JPH0534836B2 - - Google Patents

Info

Publication number
JPH0534836B2
JPH0534836B2 JP57074014A JP7401482A JPH0534836B2 JP H0534836 B2 JPH0534836 B2 JP H0534836B2 JP 57074014 A JP57074014 A JP 57074014A JP 7401482 A JP7401482 A JP 7401482A JP H0534836 B2 JPH0534836 B2 JP H0534836B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57074014A
Other versions
JPS5921064A (en
Inventor
Hiroyuki Ooshima
Toshimoto Kodaira
Toshihiko Mano
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP57074014A priority Critical patent/JPH0534836B2/ja
Priority claimed from FR8307125A external-priority patent/FR2530868B1/en
Priority claimed from GB8311878A external-priority patent/GB2122419B/en
Publication of JPS5921064A publication Critical patent/JPS5921064A/en
Priority claimed from US08/014,053 external-priority patent/US5365079A/en
Publication of JPH0534836B2 publication Critical patent/JPH0534836B2/ja
Priority claimed from US08/406,419 external-priority patent/US5650637A/en
Priority claimed from US08/461,933 external-priority patent/US5677547A/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5386Geometry or layout of the interconnection structure
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon
    • H01L29/458Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/10Materials and properties semiconductor
    • G02F2202/104Materials and properties semiconductor poly-Si
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
JP57074014A 1982-04-30 1982-04-30 Expired - Lifetime JPH0534836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57074014A JPH0534836B2 (en) 1982-04-30 1982-04-30

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
JP57074014A JPH0534836B2 (en) 1982-04-30 1982-04-30
GB8311219A GB8311219D0 (en) 1982-04-30 1983-04-25 Thin film transistor
DE19833315671 DE3315671C2 (en) 1982-04-30 1983-04-29
FR8307125A FR2530868B1 (en) 1982-04-30 1983-04-29 A thin film transistor and a display device using this liquid crystal transistor
GB8311878A GB2122419B (en) 1982-04-30 1983-04-29 A thin film transistor and an active matrix liquid crystal display device
FR8313382A FR2532116B1 (en) 1982-04-30 1983-08-17 A thin film transistor and a display device using this liquid crystal transistor
SG39888A SG39888G (en) 1982-04-30 1988-06-20 An active matrix liquid crystal display device
HK70189A HK70189A (en) 1982-04-30 1989-08-31 An active matrix liquid crystal display device
US08/014,053 US5365079A (en) 1982-04-30 1993-02-05 Thin film transistor and display device including same
US08/259,354 US6037608A (en) 1982-04-30 1994-05-03 Liquid crystal display device with crossover insulation
US08/237,521 US5474942A (en) 1982-04-30 1994-05-03 Method of forming a liquid crystal display device
US08/406,419 US5650637A (en) 1982-04-30 1995-03-20 Active matrix assembly
US08/408,979 US5552615A (en) 1982-04-30 1995-03-23 Active matrix assembly with double layer metallization over drain contact region
US08/445,030 US5573959A (en) 1982-04-30 1995-05-19 Method of forming a liquid crystal device
US08/461,933 US5677547A (en) 1982-04-30 1995-06-05 Thin film transistor and display device including same
US08/859,494 US6316790B1 (en) 1982-04-30 1997-05-20 Active matrix assembly with light blocking layer over channel region

Publications (2)

Publication Number Publication Date
JPS5921064A JPS5921064A (en) 1984-02-02
JPH0534836B2 true JPH0534836B2 (en) 1993-05-25

Family

ID=13534814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57074014A Expired - Lifetime JPH0534836B2 (en) 1982-04-30 1982-04-30

Country Status (3)

Country Link
JP (1) JPH0534836B2 (en)
DE (1) DE3315671C2 (en)
GB (1) GB8311219D0 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179256A (en) * 1984-09-26 1986-04-22 Seiko Instr & Electronics Ltd Thin-film transistor
JPH0374849A (en) * 1989-08-16 1991-03-29 Matsushita Electron Corp Semiconductor device
JPH0456282A (en) * 1990-06-25 1992-02-24 Matsushita Electron Corp Thin film transistor and liquid crystal display provided therewith
JP3092761B2 (en) * 1991-12-02 2000-09-25 キヤノン株式会社 An image display device and manufacturing method thereof
US5317433A (en) * 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
JP2869238B2 (en) * 1992-02-07 1999-03-10 シャープ株式会社 Active matrix liquid crystal display device
JP2738315B2 (en) * 1994-11-22 1998-04-08 日本電気株式会社 Thin film transistor and a manufacturing method thereof
FR2734404B1 (en) * 1995-05-16 1997-06-27 Thomson Lcd direct tft floors manufacturing process with interconnection gate-source or drain
JPH09311342A (en) 1996-05-16 1997-12-02 Semiconductor Energy Lab Co Ltd Display device
US7053973B1 (en) 1996-05-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Display device
JP3126661B2 (en) 1996-06-25 2001-01-22 株式会社半導体エネルギー研究所 The liquid crystal display device
US6576926B1 (en) * 1999-02-23 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US9035389B2 (en) * 2012-10-22 2015-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Layout schemes for cascade MOS transistors
JP6466614B2 (en) * 2018-06-04 2019-02-06 株式会社半導体エネルギー研究所 Liquid crystal display

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5492022A (en) * 1977-12-29 1979-07-20 Matsushita Electric Ind Co Ltd Picture display device
JPS5562479A (en) * 1978-11-06 1980-05-10 Suwa Seikosha Kk Liquid crystal display panel
JPS5691276A (en) * 1979-12-25 1981-07-24 Citizen Watch Co Ltd Display panel
JPS56107287A (en) * 1980-01-31 1981-08-26 Tokyo Shibaura Electric Co Image display unit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5492022A (en) * 1977-12-29 1979-07-20 Matsushita Electric Ind Co Ltd Picture display device
JPS5562479A (en) * 1978-11-06 1980-05-10 Suwa Seikosha Kk Liquid crystal display panel
JPS5691276A (en) * 1979-12-25 1981-07-24 Citizen Watch Co Ltd Display panel
JPS56107287A (en) * 1980-01-31 1981-08-26 Tokyo Shibaura Electric Co Image display unit
JPS56150871A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
GB8311219D0 (en) 1983-06-02
DE3315671A1 (en) 1983-11-03
JPS5921064A (en) 1984-02-02
DE3315671C2 (en) 1986-04-10

Similar Documents

Publication Publication Date Title
DE3204662C2 (en)
DE3205941C2 (en)
DE3202796C2 (en)
BR6200559U (en)
DE3206698C2 (en)
CH655680B (en)
DE3202464C2 (en)
CH655487B (en)
CA1264610C (en)
DE3202234C2 (en)
DE3201204C2 (en)
CH655449B (en)
DE3204823C2 (en)
DE3202721C2 (en)
CH643702B (en)
DE3207061C2 (en)
CH655494B (en)
DE3202993C2 (en)
DE3203369C1 (en)
DE3206437C2 (en)
AU525609B1 (en)
DE3204182C2 (en)
DE3204037C2 (en)
DE3207119C2 (en)
DE3200226C2 (en)