JPS58180018A - 半導体基板の製造方法 - Google Patents

半導体基板の製造方法

Info

Publication number
JPS58180018A
JPS58180018A JP57062900A JP6290082A JPS58180018A JP S58180018 A JPS58180018 A JP S58180018A JP 57062900 A JP57062900 A JP 57062900A JP 6290082 A JP6290082 A JP 6290082A JP S58180018 A JPS58180018 A JP S58180018A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor substrate
epitaxial layer
warpage
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57062900A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0435898B2 (enExample
Inventor
Kunio Yajima
矢嶋　邦夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP57062900A priority Critical patent/JPS58180018A/ja
Publication of JPS58180018A publication Critical patent/JPS58180018A/ja
Publication of JPH0435898B2 publication Critical patent/JPH0435898B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3442—
    • H10P14/2905—
    • H10P14/3411—

Landscapes

  • Recrystallisation Techniques (AREA)
JP57062900A 1982-04-14 1982-04-14 半導体基板の製造方法 Granted JPS58180018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57062900A JPS58180018A (ja) 1982-04-14 1982-04-14 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57062900A JPS58180018A (ja) 1982-04-14 1982-04-14 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPS58180018A true JPS58180018A (ja) 1983-10-21
JPH0435898B2 JPH0435898B2 (enExample) 1992-06-12

Family

ID=13213581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57062900A Granted JPS58180018A (ja) 1982-04-14 1982-04-14 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JPS58180018A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147522A (ja) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd 半導体基板の製造方法
FR2661040A1 (fr) * 1990-04-13 1991-10-18 Thomson Csf Procede d'adaptation entre deux materiaux semiconducteurs cristallises, et dispositif semiconducteur.

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5162974A (en) * 1974-11-29 1976-05-31 Matsushita Electronics Corp Handotaisochino seizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5162974A (en) * 1974-11-29 1976-05-31 Matsushita Electronics Corp Handotaisochino seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147522A (ja) * 1984-12-20 1986-07-05 Sanyo Electric Co Ltd 半導体基板の製造方法
FR2661040A1 (fr) * 1990-04-13 1991-10-18 Thomson Csf Procede d'adaptation entre deux materiaux semiconducteurs cristallises, et dispositif semiconducteur.

Also Published As

Publication number Publication date
JPH0435898B2 (enExample) 1992-06-12

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