JPS58171782A - Magnetic bubble memory device - Google Patents

Abstract

PURPOSE:To control elements different in capacity, by storing constants constituting a magnetic bubble memory element in a specific loop in the magnetic bubble memory element and reading out the stored contents into a constant setting circuit which is provided preliminarily in a controlling circuit. CONSTITUTION:Following an index 1a and a position information 1b of a defective loop which is stored in a specific loop 1, an index 1c indicating constant of the magnetic bubble memory element and a bubble memory constant 1d required for control are stored successively. The bubble memory constant 1d is put in order preliminarily, and for example, the number of loops, the number of bits in the loop, the number of read line bits, and the number of write line bits are stored in order. Thus, even if elements different in capacity are used, they are controlled with one controlling circuit.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention provides a magnetic puzzle memory device, in particular a constant setting circuit which stores the configuration of a nuclear magnetic bubble memory element in a magnetic bubble memory element, reads out the stored contents, and is provided in a control circuit in advance. For example, the present invention relates to a magnetic bubble memory device in which magnetic bubble memory elements of different capacities can be controlled by reading data into a random access memory.

By storing constants necessary for controlling the number of null loops, the number of bits in the nuclear minor loop, the number of bits in the read line, the number of bits in the write line, etc. in advance in a predetermined circuit in the control circuit, the magnetic Because it controlled the bubble memory element and realized the reading and writing of magnetic puzzles,
The controllable magnetic bubble memory device of the control circuit has been limited to only one type of specific magnetic puzzle memory device. On the other hand, magnetic bubble memory elements generally have a defective loop within the minor loop, and a method is used in which this defective loop is stored within a specific loop within the minor loop. That is, as shown in FIG. 1, an index 1a indicating the first loop is stored in a specific loop 1, and position information 1b of the defective loop is stored immediately after the index 1a.

Therefore, the present invention has been made in view of the above-mentioned conventional problems, and its purpose is to improve the configuration of a magnetic bubble memory element, that is, to change the constant required for controlling the l*magnetic bubble memory element to the magnetic bubble memory element. An object of the present invention is to provide a magnetic puzzle memory device that can control magnetic bubble memory elements having different capacities by storing data in a specific loop within a minor loop of the bubble memory element.

The present invention will be explained in detail below.

FIG. 2 is a diagram showing an example of a specific loop within the minor loop of the magnetic bubble memory element in the magnetic puzzle memory device according to the present invention. In the figure, index 1- stored in specific loop 1 and position information 1b of the defective loop.
Immediately after, an index 1@ indicating that it is a constant of one magnetic bubble memory element and a bubble memory constant 1d of a skeleton magnetic bubble memory element necessary for control are sequentially stored to form a specific loop 1. . In this case, the bubble memory constant 1d needs to be ordered in advance, for example, first the number of loops, then the number of bits in the loop, the number of read line bits, the number of write line bits, etc. One way is to let them do so. Next, it is also possible to detect whether it is the number of loops or the number of bits in the loop by storing a constant determined after the index 1c. Furthermore, as a modification of the above, only the difference in capacity is stored in the magnetic bubble memory element, that is, the 1Mb bubble memory element stores a code such as 1.4Mbi bubble memory element 4, and the control circuit Set constants for both the 1Mbi bubble memory element and the 4Mb magnetic bubble memory confectionery in t';j, and when reading 1 from the magnetic bubble memory element, set the constant for IMb, and when reading 4, It is also possible to control magnetic bubble memory elements with a newly developed capacity by using a control method using constants for JMb.

As explained above, according to the present invention, even when using magnetic bubble memory elements of different capacities, such as magnetic bubble memory cassettes, it is possible to control them with one magnetic bubble memory element control circuit, which is an extremely excellent effect. It will be done.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an example of a conventional specific loop that stores index and defective loop information, and FIG. 2 is a diagram showing an example of a specific loop in a magnetic bubble memory element minor loop related to the magnetic bubble memory device according to the present invention. It is. 1... Specific loop, 1 &... Index, 1
b...Position information of defective loop, 1c.Φ...Index, 1d...-a bubble memory constant. Figure 1 Figure 2--C J

Claims (1)

[Claims] 1.a1 In a magnetic bubble memory device using a magnetic bubble memory element, a specific loop is set in a minor loop for storing bubble information, and a constant forming the magnetic bubble memory element in the specific loop. The magnetic bubble memory element having different capacities can be controlled by the same control circuit by reading out the cell constant immediately after the start of memory operation and inputting it to the constant setting circuit in the control circuit. Puzzle memory device. 2. The magnetic bubble memory device according to claim 1, wherein the constants are the number of loops, the number of bits in the loop, the number of read line bits, and the number of write line bits.