JPS5816570A - 薄膜電界効果トランジスタ - Google Patents
薄膜電界効果トランジスタInfo
- Publication number
- JPS5816570A JPS5816570A JP56115769A JP11576981A JPS5816570A JP S5816570 A JPS5816570 A JP S5816570A JP 56115769 A JP56115769 A JP 56115769A JP 11576981 A JP11576981 A JP 11576981A JP S5816570 A JPS5816570 A JP S5816570A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- thin film
- semiconductor thin
- electrodes
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 230000005669 field effect Effects 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims description 19
- 239000010408 film Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 abstract description 11
- 230000001678 irradiating effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 208000003028 Stuttering Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56115769A JPS5816570A (ja) | 1981-07-23 | 1981-07-23 | 薄膜電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56115769A JPS5816570A (ja) | 1981-07-23 | 1981-07-23 | 薄膜電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5816570A true JPS5816570A (ja) | 1983-01-31 |
| JPH0322064B2 JPH0322064B2 (enrdf_load_stackoverflow) | 1991-03-26 |
Family
ID=14670589
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56115769A Granted JPS5816570A (ja) | 1981-07-23 | 1981-07-23 | 薄膜電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5816570A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59122361U (ja) * | 1983-02-07 | 1984-08-17 | スガツネ工業株式会社 | 閉扉保持用蝶番 |
| JPS62198155A (ja) * | 1986-02-26 | 1987-09-01 | Matsushita Electric Ind Co Ltd | 薄膜イメ−ジセンサ |
| JPS63193578A (ja) * | 1987-02-06 | 1988-08-10 | Fuji Xerox Co Ltd | 電界効果型非晶質シリコン・フオトトランジスタ |
| JPH0216777A (ja) * | 1988-07-05 | 1990-01-19 | Seikosha Co Ltd | 半導体光検出装置 |
| JPH06112486A (ja) * | 1992-09-28 | 1994-04-22 | Alps Electric Co Ltd | 薄膜トランジスタと液晶表示装置用基板および薄膜トランジスタの製造方法 |
| JP2008098638A (ja) * | 2006-10-09 | 2008-04-24 | Korea Electronics Telecommun | カルコゲナイド層を持つ薄膜トランジスタ及びその製造方法 |
| JP2010135384A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板、その製造方法及び液晶表示装置 |
-
1981
- 1981-07-23 JP JP56115769A patent/JPS5816570A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59122361U (ja) * | 1983-02-07 | 1984-08-17 | スガツネ工業株式会社 | 閉扉保持用蝶番 |
| JPS62198155A (ja) * | 1986-02-26 | 1987-09-01 | Matsushita Electric Ind Co Ltd | 薄膜イメ−ジセンサ |
| JPS63193578A (ja) * | 1987-02-06 | 1988-08-10 | Fuji Xerox Co Ltd | 電界効果型非晶質シリコン・フオトトランジスタ |
| JPH0216777A (ja) * | 1988-07-05 | 1990-01-19 | Seikosha Co Ltd | 半導体光検出装置 |
| JPH06112486A (ja) * | 1992-09-28 | 1994-04-22 | Alps Electric Co Ltd | 薄膜トランジスタと液晶表示装置用基板および薄膜トランジスタの製造方法 |
| JP2008098638A (ja) * | 2006-10-09 | 2008-04-24 | Korea Electronics Telecommun | カルコゲナイド層を持つ薄膜トランジスタ及びその製造方法 |
| JP2010135384A (ja) * | 2008-12-02 | 2010-06-17 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板、その製造方法及び液晶表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0322064B2 (enrdf_load_stackoverflow) | 1991-03-26 |
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