JPS58165314A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58165314A
JPS58165314A JP57047354A JP4735482A JPS58165314A JP S58165314 A JPS58165314 A JP S58165314A JP 57047354 A JP57047354 A JP 57047354A JP 4735482 A JP4735482 A JP 4735482A JP S58165314 A JPS58165314 A JP S58165314A
Authority
JP
Japan
Prior art keywords
semiconductor layer
crystal
layer
thin film
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57047354A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6236381B2 (cg-RX-API-DMAC10.html
Inventor
Masayoshi Koba
木場　正義
Katsuteru Awane
粟根　克昶
Atsushi Kudo
淳 工藤
Tatsuo Morita
達夫 森田
Toshiaki Miyajima
利明 宮嶋
Katsuji Iguchi
勝次 井口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57047354A priority Critical patent/JPS58165314A/ja
Publication of JPS58165314A publication Critical patent/JPS58165314A/ja
Publication of JPS6236381B2 publication Critical patent/JPS6236381B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3802—
    • H10P14/2921—
    • H10P14/3211—
    • H10P14/3238—
    • H10P14/3244—
    • H10P14/3248—
    • H10P14/3411—
    • H10P14/3458—

Landscapes

  • Recrystallisation Techniques (AREA)
JP57047354A 1982-03-26 1982-03-26 半導体装置の製造方法 Granted JPS58165314A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57047354A JPS58165314A (ja) 1982-03-26 1982-03-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57047354A JPS58165314A (ja) 1982-03-26 1982-03-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58165314A true JPS58165314A (ja) 1983-09-30
JPS6236381B2 JPS6236381B2 (cg-RX-API-DMAC10.html) 1987-08-06

Family

ID=12772799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57047354A Granted JPS58165314A (ja) 1982-03-26 1982-03-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58165314A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101767A (ja) * 1988-10-11 1990-04-13 Agency Of Ind Science & Technol 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02101767A (ja) * 1988-10-11 1990-04-13 Agency Of Ind Science & Technol 半導体装置

Also Published As

Publication number Publication date
JPS6236381B2 (cg-RX-API-DMAC10.html) 1987-08-06

Similar Documents

Publication Publication Date Title
JPS6281709A (ja) 半導体装置の製造方法
JPS61244020A (ja) 欠陥が局限された配向された単結晶シリコンフイルムを絶縁支持体上に製造する方法
JPS5939790A (ja) 単結晶の製造方法
JPS58165314A (ja) 半導体装置の製造方法
JPS62160712A (ja) 半導体装置の製造方法
JPS61251115A (ja) 絶縁膜上の半導体単結晶成長方法
JPS6119116A (ja) 半導体装置の製造方法
JPS621220A (ja) 欠陥が局在された配向シリコン単結晶膜を絶縁支持体上に製造する方法
JPS58139423A (ja) ラテラルエピタキシヤル成長法
JPS6159820A (ja) 半導体装置の製造方法
JPS5939791A (ja) 単結晶の製造方法
JPS58175844A (ja) 半導体装置の製造方法
JPS5856457A (ja) 半導体装置の製造方法
JPS58180019A (ja) 半導体基体およびその製造方法
JPH04236450A (ja) 半導体装置の製造方法
JPH02267931A (ja) 半導体装置の製造方法
JPS5893227A (ja) 薄膜単結晶の製造方法
JPH0722120B2 (ja) 半導体装置の製造方法
JPS6379953A (ja) 単結晶薄膜の製造方法
JPH0797555B2 (ja) Ｓｏｉ基板の製造方法
JPS6319808A (ja) 半導体単結晶層の製造方法
JPH0795523B2 (ja) 三次元半導体装置の製造方法
JPS62145721A (ja) 単結晶薄膜の製造方法
JPS6265410A (ja) 単結晶薄膜形成方法
JPS6246510A (ja) 半導体装置の製造方法