JPS5816068A - プレ−ナマグネトロン方式のスパッタリング方法 - Google Patents

プレ−ナマグネトロン方式のスパッタリング方法

Info

Publication number
JPS5816068A
JPS5816068A JP11366081A JP11366081A JPS5816068A JP S5816068 A JPS5816068 A JP S5816068A JP 11366081 A JP11366081 A JP 11366081A JP 11366081 A JP11366081 A JP 11366081A JP S5816068 A JPS5816068 A JP S5816068A
Authority
JP
Japan
Prior art keywords
target
magnetic
spatter
magnetic field
magnetic pole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11366081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6116347B2 (enrdf_load_stackoverflow
Inventor
Kazuyuki Fujimoto
藤本　一之
Yoshio Nakagawa
宣雄 中川
Katsuo Abe
勝男 阿部
Hide Kobayashi
秀 小林
Tsuneaki Kamei
亀井　常彰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11366081A priority Critical patent/JPS5816068A/ja
Priority to US06/400,258 priority patent/US4444635A/en
Priority to EP82106621A priority patent/EP0070574B1/en
Priority to DE8282106621T priority patent/DE3272887D1/de
Publication of JPS5816068A publication Critical patent/JPS5816068A/ja
Publication of JPS6116347B2 publication Critical patent/JPS6116347B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3458—Electromagnets in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Physical Vapour Deposition (AREA)
JP11366081A 1981-07-22 1981-07-22 プレ−ナマグネトロン方式のスパッタリング方法 Granted JPS5816068A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP11366081A JPS5816068A (ja) 1981-07-22 1981-07-22 プレ−ナマグネトロン方式のスパッタリング方法
US06/400,258 US4444635A (en) 1981-07-22 1982-07-21 Film forming method
EP82106621A EP0070574B1 (en) 1981-07-22 1982-07-22 Film forming method
DE8282106621T DE3272887D1 (en) 1981-07-22 1982-07-22 Film forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11366081A JPS5816068A (ja) 1981-07-22 1981-07-22 プレ−ナマグネトロン方式のスパッタリング方法

Publications (2)

Publication Number Publication Date
JPS5816068A true JPS5816068A (ja) 1983-01-29
JPS6116347B2 JPS6116347B2 (enrdf_load_stackoverflow) 1986-04-30

Family

ID=14617910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11366081A Granted JPS5816068A (ja) 1981-07-22 1981-07-22 プレ−ナマグネトロン方式のスパッタリング方法

Country Status (1)

Country Link
JP (1) JPS5816068A (enrdf_load_stackoverflow)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171569A (ja) * 1982-03-31 1983-10-08 Hidetoshi Tsuchiya スパッタリング方法
JPS6039160A (ja) * 1983-07-19 1985-02-28 バリアン・アソシエイツ・インコーポレイテツド 磁性及び非磁性双方のターゲツト物質のためのマグネトロンスパツタコーテイング源
JPS6039161A (ja) * 1983-07-19 1985-02-28 バリアン・アソシエイツ・インコーポレイテツド スパツタ・コーテイングを制御する方法及び装置
JPS60148951A (ja) * 1984-01-11 1985-08-06 菊水化学工業株式会社 無釉タイルを塗りメヂとする工法
JPS6112863A (ja) * 1984-06-28 1986-01-21 Toshiba Corp 合金膜の形成方法
US4606806A (en) * 1984-05-17 1986-08-19 Varian Associates, Inc. Magnetron sputter device having planar and curved targets
JPS63262462A (ja) * 1987-04-17 1988-10-28 Ube Ind Ltd プラズマ制御マグネトロンスパツタリング装置及び方法
JPS6419749U (enrdf_load_stackoverflow) * 1987-07-25 1989-01-31
JPH0289137U (enrdf_load_stackoverflow) * 1988-12-28 1990-07-16
JPH0358536U (enrdf_load_stackoverflow) * 1989-10-14 1991-06-07
JPH03126940U (enrdf_load_stackoverflow) * 1990-04-03 1991-12-20
JP2007527839A (ja) * 2004-03-01 2007-10-04 プラクスエア・テクノロジー・インコーポレイテッド 低ジルコニウムのハロゲン化ハフニウム組成物

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171569A (ja) * 1982-03-31 1983-10-08 Hidetoshi Tsuchiya スパッタリング方法
JPS6039160A (ja) * 1983-07-19 1985-02-28 バリアン・アソシエイツ・インコーポレイテツド 磁性及び非磁性双方のターゲツト物質のためのマグネトロンスパツタコーテイング源
JPS6039161A (ja) * 1983-07-19 1985-02-28 バリアン・アソシエイツ・インコーポレイテツド スパツタ・コーテイングを制御する方法及び装置
JPS60148951A (ja) * 1984-01-11 1985-08-06 菊水化学工業株式会社 無釉タイルを塗りメヂとする工法
US4606806A (en) * 1984-05-17 1986-08-19 Varian Associates, Inc. Magnetron sputter device having planar and curved targets
JPS6112863A (ja) * 1984-06-28 1986-01-21 Toshiba Corp 合金膜の形成方法
JPS63262462A (ja) * 1987-04-17 1988-10-28 Ube Ind Ltd プラズマ制御マグネトロンスパツタリング装置及び方法
JPS6419749U (enrdf_load_stackoverflow) * 1987-07-25 1989-01-31
JPH0289137U (enrdf_load_stackoverflow) * 1988-12-28 1990-07-16
JPH0358536U (enrdf_load_stackoverflow) * 1989-10-14 1991-06-07
JPH03126940U (enrdf_load_stackoverflow) * 1990-04-03 1991-12-20
JP2007527839A (ja) * 2004-03-01 2007-10-04 プラクスエア・テクノロジー・インコーポレイテッド 低ジルコニウムのハロゲン化ハフニウム組成物
JP4852527B2 (ja) * 2004-03-01 2012-01-11 プラクスエア・テクノロジー・インコーポレイテッド 低ジルコニウムのハロゲン化ハフニウム組成物

Also Published As

Publication number Publication date
JPS6116347B2 (enrdf_load_stackoverflow) 1986-04-30

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