JPS58157159A - 光駆動型半導体装置の製造方法 - Google Patents

光駆動型半導体装置の製造方法

Info

Publication number
JPS58157159A
JPS58157159A JP57038877A JP3887782A JPS58157159A JP S58157159 A JPS58157159 A JP S58157159A JP 57038877 A JP57038877 A JP 57038877A JP 3887782 A JP3887782 A JP 3887782A JP S58157159 A JPS58157159 A JP S58157159A
Authority
JP
Japan
Prior art keywords
layer
light
semiconductor device
driven semiconductor
photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57038877A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0346983B2 (enrdf_load_stackoverflow
Inventor
Hideo Matsuda
秀雄 松田
Yoshiaki Tsunoda
角田　良昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57038877A priority Critical patent/JPS58157159A/ja
Publication of JPS58157159A publication Critical patent/JPS58157159A/ja
Publication of JPH0346983B2 publication Critical patent/JPH0346983B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors

Landscapes

  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
JP57038877A 1982-03-13 1982-03-13 光駆動型半導体装置の製造方法 Granted JPS58157159A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57038877A JPS58157159A (ja) 1982-03-13 1982-03-13 光駆動型半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038877A JPS58157159A (ja) 1982-03-13 1982-03-13 光駆動型半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58157159A true JPS58157159A (ja) 1983-09-19
JPH0346983B2 JPH0346983B2 (enrdf_load_stackoverflow) 1991-07-17

Family

ID=12537443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038877A Granted JPS58157159A (ja) 1982-03-13 1982-03-13 光駆動型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58157159A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021005669A (ja) * 2019-06-27 2021-01-14 株式会社沖データ 発光サイリスタ、発光素子チップ、光プリントヘッド、及び画像形成装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727062A (en) * 1980-07-25 1982-02-13 Toshiba Corp Optical thyristor
JPS5727063A (en) * 1980-07-25 1982-02-13 Toshiba Corp Optical thyristor
JPS5785259A (en) * 1980-11-17 1982-05-27 Hitachi Ltd Light drive type thyristor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5727062A (en) * 1980-07-25 1982-02-13 Toshiba Corp Optical thyristor
JPS5727063A (en) * 1980-07-25 1982-02-13 Toshiba Corp Optical thyristor
JPS5785259A (en) * 1980-11-17 1982-05-27 Hitachi Ltd Light drive type thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021005669A (ja) * 2019-06-27 2021-01-14 株式会社沖データ 発光サイリスタ、発光素子チップ、光プリントヘッド、及び画像形成装置

Also Published As

Publication number Publication date
JPH0346983B2 (enrdf_load_stackoverflow) 1991-07-17

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