JPS6133275B2 - - Google Patents
Info
- Publication number
- JPS6133275B2 JPS6133275B2 JP12132679A JP12132679A JPS6133275B2 JP S6133275 B2 JPS6133275 B2 JP S6133275B2 JP 12132679 A JP12132679 A JP 12132679A JP 12132679 A JP12132679 A JP 12132679A JP S6133275 B2 JPS6133275 B2 JP S6133275B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- region
- layer
- light emitting
- carrier concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12132679A JPS5645087A (en) | 1979-09-20 | 1979-09-20 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12132679A JPS5645087A (en) | 1979-09-20 | 1979-09-20 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5645087A JPS5645087A (en) | 1981-04-24 |
JPS6133275B2 true JPS6133275B2 (enrdf_load_stackoverflow) | 1986-08-01 |
Family
ID=14808475
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12132679A Granted JPS5645087A (en) | 1979-09-20 | 1979-09-20 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5645087A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6467772A (en) * | 1987-09-08 | 1989-03-14 | Pioneer Electronic Corp | High-speed target address search method for disk player |
JPS6476574A (en) * | 1987-09-18 | 1989-03-22 | Pioneer Electronic Corp | High-speed searching method in disk player |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2649510B2 (ja) * | 1986-01-31 | 1997-09-03 | 松下電器産業株式会社 | 発光半導体装置 |
US4927778A (en) * | 1988-08-05 | 1990-05-22 | Eastman Kodak Company | Method of improving yield of LED arrays |
-
1979
- 1979-09-20 JP JP12132679A patent/JPS5645087A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6467772A (en) * | 1987-09-08 | 1989-03-14 | Pioneer Electronic Corp | High-speed target address search method for disk player |
JPS6476574A (en) * | 1987-09-18 | 1989-03-22 | Pioneer Electronic Corp | High-speed searching method in disk player |
Also Published As
Publication number | Publication date |
---|---|
JPS5645087A (en) | 1981-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6936486B2 (en) | Low voltage multi-junction vertical cavity surface emitting laser | |
US5481122A (en) | Surface light emitting diode with electrically conductive window layer | |
US7583714B2 (en) | Vertical cavity surface emitting semiconductor laser device | |
US5869849A (en) | Light-emitting diodes with high illumination | |
JPS5826834B2 (ja) | 半導体レ−ザ−装置 | |
JP2597975B2 (ja) | 半導体発光素子及びその製造方法 | |
JPH06112594A (ja) | 面発光型半導体発光装置およびその製造方法 | |
JPH07111339A (ja) | 面発光型半導体発光装置 | |
JPS6133275B2 (enrdf_load_stackoverflow) | ||
US7103080B2 (en) | Laser diode with a low absorption diode junction | |
JPH11284280A (ja) | 半導体レーザ装置及びその製造方法ならびにiii−v族化合物半導体素子の製造方法 | |
JP2847118B2 (ja) | 電磁放射を発生する半導体装置 | |
US4447822A (en) | Light emitting diode | |
EP0401071A1 (fr) | Laser semiconducteur à localisation de courant | |
JP2738040B2 (ja) | 半導体発光装置 | |
KR100493145B1 (ko) | GaN계레이저다이오드 | |
JPS62503139A (ja) | 半導体デバイス | |
JPS61139082A (ja) | 半導体発光装置 | |
JPS58140178A (ja) | 半導体発光素子 | |
JPH05299771A (ja) | 半導体レーザダイオード | |
CN115425518A (zh) | 一种半导体激光器及光学设备 | |
KR940011270B1 (ko) | 레이저 다이오드의 제조방법 | |
JP2628638B2 (ja) | 半導体レーザ素子 | |
Thompson et al. | Twin-transverse-junction stripe laser with linear light/current characteristic and low threshold | |
JPS6132485A (ja) | 半導体発光素子 |