JPS5815237A - Apparatus for manufacturing semiconductor - Google Patents
Apparatus for manufacturing semiconductorInfo
- Publication number
- JPS5815237A JPS5815237A JP56114203A JP11420381A JPS5815237A JP S5815237 A JPS5815237 A JP S5815237A JP 56114203 A JP56114203 A JP 56114203A JP 11420381 A JP11420381 A JP 11420381A JP S5815237 A JPS5815237 A JP S5815237A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- flatness
- stage
- exposure
- conjunction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Abstract
Description
【発明の詳細な説明】 本発明は半導体製造装置に関する。[Detailed description of the invention] The present invention relates to semiconductor manufacturing equipment.
従来の半導体用露光装置は、平たんな真空吸着用の吸着
口により半導体ウニノ・−を吸着する事に1シ、平たん
1を出している。A conventional exposure apparatus for semiconductors uses a flat suction port for vacuum suction to suction semiconductor particles.
半導体製造にお社る半導体ウニノ・−1j1製造工程中
において熱処理、酸化、拡散等により1反り。Warpage due to heat treatment, oxidation, diffusion, etc. during the semiconductor manufacturing process.
―り等が生じる。このウニノー−の反り1曲#)#−j
半導体用露光装置において半導体素子作匠用ノ(ターン
の転写に大きな障害となる。-ri etc. occur. 1 song of this unino - warp #) #-j
In semiconductor exposure equipment, it becomes a major hindrance to the transfer of turns for semiconductor device design.
本発明はかかる欠点を除去したもので、その目的ij、
半導体素子の歩留向上を目的とする。以下実施例に基づ
いて本発明の詳細な説明する。The present invention eliminates such drawbacks and has the following objectives:
The purpose is to improve the yield of semiconductor devices. The present invention will be described in detail below based on Examples.
第1図において、本発明にお社る露光装置概略図であり
、露光前のウェハー6をセットし霞つェハーキャリ了1
よりウェハーはウェハー吸着ステージ2に移り、ウニノ
・−を吸着をしたウェー・−ステージは、平たん1測定
器3下にあり、測定器と連動して平たん匿の調節が行な
われ霞徒、露f!1iW4の下に入れ、必要時間、露光
処理をした徒ウェハーは、キャリア5に収納される。FIG. 1 is a schematic diagram of an exposure apparatus according to the present invention, in which a wafer 6 before exposure is set and a hazy wafer carry is completed.
The wafer then moves to the wafer adsorption stage 2, and the wafer stage that adsorbed the wafer is located under the flat 1 measuring device 3, and the flat holding is adjusted in conjunction with the measuring device. Dew f! The waste wafers placed under the wafer 1iW4 and subjected to exposure processing for the necessary time are stored in the carrier 5.
上記平たん度調節用、ウェハーステージは、II2図に
示すINK自101〜124に分割され自lO1〜至1
24各分野部分が平たんlI″測定器と連動で動11.
平たん置が最良の状態となる様に設定される。The wafer stage for flatness adjustment is divided into INK 101 to 124 as shown in Figure II2.
24 Each field part moves in conjunction with the flat lI'' measuring instrument 11.
It is set so that it is placed flat for the best condition.
本発明は1配の様に、露光前のウェハーの平霞ん度を調
節する事KzL半導体素子の歩留向上等すぐれt効果を
有するものであ)、l!A密l素子製造にも有効である
。The present invention has excellent effects such as improving the yield of KZL semiconductor devices by adjusting the flat haze of the wafer before exposure, as shown in Section 1). It is also effective in manufacturing A-density L elements.
wL1図は本発明による概観図、第2図はステージの詳
細図である。
以 上
出願人 株式会社諏訪精工舎
代理人 最 上 務Figure wL1 is an overview diagram according to the present invention, and Figure 2 is a detailed diagram of the stage. Applicant: Suwa Seikosha Co., Ltd. Agent Mogami
Claims (1)
iを、調節できる事を特徴とする半導体製造装置。A semiconductor manufacturing device characterized in that the flatness of the semiconductor unit can be adjusted in the g-optical device for semiconductors.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56114203A JPS5815237A (en) | 1981-07-21 | 1981-07-21 | Apparatus for manufacturing semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56114203A JPS5815237A (en) | 1981-07-21 | 1981-07-21 | Apparatus for manufacturing semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5815237A true JPS5815237A (en) | 1983-01-28 |
Family
ID=14631784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56114203A Pending JPS5815237A (en) | 1981-07-21 | 1981-07-21 | Apparatus for manufacturing semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5815237A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4888871A (en) * | 1972-02-02 | 1973-11-21 | ||
JPS54146580A (en) * | 1978-05-09 | 1979-11-15 | Nippon Telegr & Teleph Corp <Ntt> | Thin plate flattening correction mechanism |
JPS56130738A (en) * | 1980-03-19 | 1981-10-13 | Hitachi Ltd | Method and device for exposure |
-
1981
- 1981-07-21 JP JP56114203A patent/JPS5815237A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4888871A (en) * | 1972-02-02 | 1973-11-21 | ||
JPS54146580A (en) * | 1978-05-09 | 1979-11-15 | Nippon Telegr & Teleph Corp <Ntt> | Thin plate flattening correction mechanism |
JPS56130738A (en) * | 1980-03-19 | 1981-10-13 | Hitachi Ltd | Method and device for exposure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20010103662A (en) | System and method for coating and developing | |
TW201937630A (en) | Substrate processing device and substrate processing method | |
JPS5815237A (en) | Apparatus for manufacturing semiconductor | |
JPS5651732A (en) | Exposure processing method | |
US4588379A (en) | Configuration for temperature treatment of substrates, in particular semi-conductor crystal wafers | |
JPS60120520A (en) | Transporting device for manufacture of semiconductor | |
JPS6016538U (en) | Single-sided processing equipment for semiconductor wafers | |
JPS61105841A (en) | Vacuum chucking method | |
JPH03297125A (en) | Pattern transcription apparatus | |
JPS63164431A (en) | Dry etching system | |
JPS5380157A (en) | Manufacture of semiconductor device | |
JPS59194440A (en) | Pattern forming apparatus | |
JPH04256309A (en) | Semiconductor manufacturing device | |
JP2926214B2 (en) | Apparatus and method for manufacturing substrate to be processed | |
JP2978619B2 (en) | Semiconductor device manufacturing method and manufacturing apparatus | |
KR100443523B1 (en) | Apparatus for removing particles from back surface of wafer with electrostatic plate | |
JPH03178121A (en) | Semiconductor exposing device | |
JPS5621329A (en) | Plasma treatment | |
JPS6334921A (en) | Diffusion furnace apparatus | |
JP3288837B2 (en) | Solder grain setting device | |
JPH07176589A (en) | Apparatus and method for manufacture | |
JPH03278517A (en) | Ultraviolet-ray irradiation apparatus for semiconductor wafer | |
JPH04225546A (en) | Method of manufacturing semiconductor device | |
JPH0424915A (en) | Carrier device | |
JPS5234666A (en) | Semi-conductor wafer processing |