JPS5814738B2 - リンド−ピングヨウコタイカクサンゲンノ セイゾウホウホウ - Google Patents
リンド−ピングヨウコタイカクサンゲンノ セイゾウホウホウInfo
- Publication number
- JPS5814738B2 JPS5814738B2 JP49116250A JP11625074A JPS5814738B2 JP S5814738 B2 JPS5814738 B2 JP S5814738B2 JP 49116250 A JP49116250 A JP 49116250A JP 11625074 A JP11625074 A JP 11625074A JP S5814738 B2 JPS5814738 B2 JP S5814738B2
- Authority
- JP
- Japan
- Prior art keywords
- doping
- phosphorus
- diffusion
- wafer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052698 phosphorus Inorganic materials 0.000 claims description 26
- 239000011574 phosphorus Substances 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 24
- 239000011230 binding agent Substances 0.000 claims description 13
- 238000010791 quenching Methods 0.000 claims description 8
- 230000000171 quenching effect Effects 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 description 33
- 238000000034 method Methods 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 14
- 239000007787 solid Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- VYDNCCLNAHRIST-UHFFFAOYSA-N 13827-38-8 Chemical compound O1P(=O)(O2)O[Si]31OP2(=O)O3 VYDNCCLNAHRIST-UHFFFAOYSA-N 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 7
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005056 compaction Methods 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- DTEMQJHXKZCSMQ-UHFFFAOYSA-J phosphonato phosphate;zirconium(4+) Chemical compound [Zr+4].[O-]P([O-])(=O)OP([O-])([O-])=O DTEMQJHXKZCSMQ-UHFFFAOYSA-J 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000003018 phosphorus compounds Chemical class 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- AXOXZJJMUVSZQY-BVDKBYOBSA-N sip 20 Chemical compound C([C@@H](C(=O)N[C@H](C(=O)N[C@@H](C)C(=O)N[C@@H](CO)C(=O)NCC(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@H](C(=O)NCC(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CCCNC(N)=N)C(=O)N[C@@H](CC(N)=O)C(=O)N[C@@H](C)C(=O)N[C@@H]([C@@H](C)CC)C(=O)N[C@@H](CC=1NC=NC=1)C(=O)N[C@@H](CC(O)=O)C(O)=O)C(C)O)[C@@H](C)CC)NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](C)NC(=O)[C@H](CC=1C=CC(O)=CC=1)NC(=O)[C@@H](NC(=O)[C@@H](N)C(C)O)C(C)O)C1=CC=CC=C1 AXOXZJJMUVSZQY-BVDKBYOBSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910020667 PBr3 Inorganic materials 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910020269 SiP2 Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910006254 ZrP2O7 Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- MEGHWIAOTJPCHQ-UHFFFAOYSA-N ethenyl butanoate Chemical compound CCCC(=O)OC=C MEGHWIAOTJPCHQ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- IPNPIHIZVLFAFP-UHFFFAOYSA-N phosphorus tribromide Chemical compound BrP(Br)Br IPNPIHIZVLFAFP-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/447—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on phosphates, e.g. hydroxyapatite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/500,765 US3931056A (en) | 1974-08-26 | 1974-08-26 | Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5125512A JPS5125512A (US20090177143A1-20090709-C00008.png) | 1976-03-02 |
| JPS5814738B2 true JPS5814738B2 (ja) | 1983-03-22 |
Family
ID=23990832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49116250A Expired JPS5814738B2 (ja) | 1974-08-26 | 1974-10-11 | リンド−ピングヨウコタイカクサンゲンノ セイゾウホウホウ |
Country Status (6)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0336246Y2 (US20090177143A1-20090709-C00008.png) * | 1983-09-09 | 1991-08-01 |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4025464A (en) * | 1973-11-01 | 1977-05-24 | Mitsuo Yamashita | Composition for diffusing phosphorus |
| US4033790A (en) * | 1976-07-29 | 1977-07-05 | Denki Kagaku Kogyo Kabushiki Kaisha | Solid diffusion dopants for semiconductors and method of making the same |
| US4588455A (en) * | 1984-08-15 | 1986-05-13 | Emulsitone Company | Planar diffusion source |
| US4687715A (en) * | 1985-07-26 | 1987-08-18 | Westinghouse Electric Corp. | Zirconium pyrophosphate matrix layer for electrolyte in a fuel cell |
| EP0485122A1 (en) * | 1990-11-07 | 1992-05-13 | The Carborundum Company | Cerium pentaphosphate planar diffusion source for doping at low temperatures |
| JPH0812849B2 (ja) * | 1991-05-31 | 1996-02-07 | 株式会社日立製作所 | 太陽電池の製造方法 |
| US6461948B1 (en) * | 2000-03-29 | 2002-10-08 | Techneglas, Inc. | Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam |
| CN102486997B (zh) * | 2010-12-01 | 2014-02-26 | 天威新能源控股有限公司 | 一种利用协助磷源气扩散的固态磷源制备pn结的方法 |
| US9196486B2 (en) * | 2012-10-26 | 2015-11-24 | Innovalight, Inc. | Inorganic phosphate containing doping compositions |
| RU2567405C2 (ru) * | 2014-01-31 | 2015-11-10 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ получения истоковой области силового транзистора |
| RU2612043C1 (ru) * | 2015-10-21 | 2017-03-02 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский политехнический университет" | Способ легирования полупроводникового кремния фосфором при формировании p-n переходов |
| CN109608188B (zh) * | 2019-01-23 | 2021-08-10 | 航天材料及工艺研究所 | 一种抗烧结焦磷酸锆多孔陶瓷及其制备方法 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL99619C (US20090177143A1-20090709-C00008.png) * | 1955-06-28 | |||
| US3354005A (en) * | 1965-10-23 | 1967-11-21 | Western Electric Co | Methods of applying doping compositions to base materials |
| US3473980A (en) * | 1966-10-11 | 1969-10-21 | Bell Telephone Labor Inc | Significant impurity sources for solid state diffusion |
| DE1644003A1 (de) * | 1967-04-20 | 1970-09-24 | Siemens Ag | Verfahren zum Dotieren von Halbleiterkristallen |
| US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
| US3630793A (en) * | 1969-02-24 | 1971-12-28 | Ralph W Christensen | Method of making junction-type semiconductor devices |
| US3849344A (en) * | 1972-03-31 | 1974-11-19 | Carborundum Co | Solid diffusion sources containing phosphorus and silicon |
| US3852086A (en) * | 1973-06-28 | 1974-12-03 | Carborundum Co | Solid diffusion sources for phosphorus doping |
-
1974
- 1974-08-26 US US05/500,765 patent/US3931056A/en not_active Expired - Lifetime
- 1974-10-10 DE DE2448258A patent/DE2448258C2/de not_active Expired
- 1974-10-11 JP JP49116250A patent/JPS5814738B2/ja not_active Expired
- 1974-10-11 FR FR7434367A patent/FR2282939A1/fr active Granted
-
1975
- 1975-07-30 CA CA232,564A patent/CA1059158A/en not_active Expired
- 1975-08-22 GB GB34890/75A patent/GB1517382A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0336246Y2 (US20090177143A1-20090709-C00008.png) * | 1983-09-09 | 1991-08-01 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1059158A (en) | 1979-07-24 |
| JPS5125512A (US20090177143A1-20090709-C00008.png) | 1976-03-02 |
| DE2448258C2 (de) | 1983-12-08 |
| DE2448258A1 (de) | 1976-03-11 |
| GB1517382A (en) | 1978-07-12 |
| FR2282939B1 (US20090177143A1-20090709-C00008.png) | 1978-07-21 |
| US3931056A (en) | 1976-01-06 |
| FR2282939A1 (fr) | 1976-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5814738B2 (ja) | リンド−ピングヨウコタイカクサンゲンノ セイゾウホウホウ | |
| US3849344A (en) | Solid diffusion sources containing phosphorus and silicon | |
| KR890701501A (ko) | 휘스커 보강 세라믹과 그것의 클래드/고온 이소스태틱 압분방법 | |
| US3923563A (en) | Process for doping silicon semiconductors using an impregnated refractory dopant source | |
| JPS584451B2 (ja) | リンド−ピングヨウ コタイカクサンゲン | |
| US4800175A (en) | Phosphorous planar dopant source for low temperature applications | |
| US3920882A (en) | N-type dopant source | |
| US4588455A (en) | Planar diffusion source | |
| CA1217784A (en) | Porous semiconductor dopant carriers | |
| US4033790A (en) | Solid diffusion dopants for semiconductors and method of making the same | |
| US3954525A (en) | Hot-pressed solid diffusion sources for phosphorus | |
| EP0134077B1 (en) | Novel arsenate dopant compounds | |
| US5006491A (en) | Process for production of nitride ceramic shapes | |
| US4749615A (en) | Semiconductor dopant source | |
| US4846902A (en) | Solid diffusion source of GD oxide/P205 compound and method of making silicon wafer | |
| EP0156054B1 (en) | Porous silicon nitride semiconductor dopant carriers | |
| ES8106875A1 (es) | Procedimiento para la fabricacion de una ceramica densa de carburo de silicio | |
| US4375443A (en) | Process for producing electrically-conductive articles from silicon powder by treatment in the presence of boron oxide | |
| JPH0567593B2 (US20090177143A1-20090709-C00008.png) | ||
| RU1454157C (ru) | Способ изготовления твердых планарных источников диффузии бора на основе нитрида бора | |
| JPH03159970A (ja) | 耐熱性多孔質非酸化物系セラミックス焼結体とその製造方法 | |
| SE7613459L (sv) | Termiskt stabil, sintrad, poros metallartikel och sett att framstella | |
| JPS5939769A (ja) | 窒化けい素の焼結方法 | |
| JPH0383329A (ja) | 半導体基板への不純物の拡散方法 | |
| JPS6158864A (ja) | 高融点金属二珪化物基焼結体の製造方法 |
