FR2282939A1 - Procede de preparation d'une source solide de phosphore de dopage - Google Patents
Procede de preparation d'une source solide de phosphore de dopageInfo
- Publication number
- FR2282939A1 FR2282939A1 FR7434367A FR7434367A FR2282939A1 FR 2282939 A1 FR2282939 A1 FR 2282939A1 FR 7434367 A FR7434367 A FR 7434367A FR 7434367 A FR7434367 A FR 7434367A FR 2282939 A1 FR2282939 A1 FR 2282939A1
- Authority
- FR
- France
- Prior art keywords
- preparing
- solid source
- doping phosphorus
- doping
- phosphorus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title 1
- 229910052698 phosphorus Inorganic materials 0.000 title 1
- 239000011574 phosphorus Substances 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/447—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on phosphates, e.g. hydroxyapatite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2225—Diffusion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/500,765 US3931056A (en) | 1974-08-26 | 1974-08-26 | Solid diffusion sources for phosphorus doping containing silicon and zirconium pyrophosphates |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2282939A1 true FR2282939A1 (fr) | 1976-03-26 |
FR2282939B1 FR2282939B1 (fr) | 1978-07-21 |
Family
ID=23990832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7434367A Granted FR2282939A1 (fr) | 1974-08-26 | 1974-10-11 | Procede de preparation d'une source solide de phosphore de dopage |
Country Status (6)
Country | Link |
---|---|
US (1) | US3931056A (fr) |
JP (1) | JPS5814738B2 (fr) |
CA (1) | CA1059158A (fr) |
DE (1) | DE2448258C2 (fr) |
FR (1) | FR2282939A1 (fr) |
GB (1) | GB1517382A (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4025464A (en) * | 1973-11-01 | 1977-05-24 | Mitsuo Yamashita | Composition for diffusing phosphorus |
US4033790A (en) * | 1976-07-29 | 1977-07-05 | Denki Kagaku Kogyo Kabushiki Kaisha | Solid diffusion dopants for semiconductors and method of making the same |
JPS6065040U (ja) * | 1983-09-09 | 1985-05-08 | 松下電工株式会社 | 照明付原稿台 |
US4588455A (en) * | 1984-08-15 | 1986-05-13 | Emulsitone Company | Planar diffusion source |
US4687715A (en) * | 1985-07-26 | 1987-08-18 | Westinghouse Electric Corp. | Zirconium pyrophosphate matrix layer for electrolyte in a fuel cell |
EP0485122A1 (fr) * | 1990-11-07 | 1992-05-13 | The Carborundum Company | Source de diffusion planaire de pentaphosphate de cerium pour le dopage à basse température |
JPH0812849B2 (ja) * | 1991-05-31 | 1996-02-07 | 株式会社日立製作所 | 太陽電池の製造方法 |
US6461948B1 (en) * | 2000-03-29 | 2002-10-08 | Techneglas, Inc. | Method of doping silicon with phosphorus and growing oxide on silicon in the presence of steam |
CN102486997B (zh) * | 2010-12-01 | 2014-02-26 | 天威新能源控股有限公司 | 一种利用协助磷源气扩散的固态磷源制备pn结的方法 |
US9196486B2 (en) * | 2012-10-26 | 2015-11-24 | Innovalight, Inc. | Inorganic phosphate containing doping compositions |
RU2567405C2 (ru) * | 2014-01-31 | 2015-11-10 | Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) | Способ получения истоковой области силового транзистора |
RU2612043C1 (ru) * | 2015-10-21 | 2017-03-02 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский политехнический университет" | Способ легирования полупроводникового кремния фосфором при формировании p-n переходов |
CN109608188B (zh) * | 2019-01-23 | 2021-08-10 | 航天材料及工艺研究所 | 一种抗烧结焦磷酸锆多孔陶瓷及其制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL99619C (fr) * | 1955-06-28 | |||
US3354005A (en) * | 1965-10-23 | 1967-11-21 | Western Electric Co | Methods of applying doping compositions to base materials |
US3473980A (en) * | 1966-10-11 | 1969-10-21 | Bell Telephone Labor Inc | Significant impurity sources for solid state diffusion |
DE1644003A1 (de) * | 1967-04-20 | 1970-09-24 | Siemens Ag | Verfahren zum Dotieren von Halbleiterkristallen |
US3514348A (en) * | 1967-05-10 | 1970-05-26 | Ncr Co | Method for making semiconductor devices |
US3630793A (en) * | 1969-02-24 | 1971-12-28 | Ralph W Christensen | Method of making junction-type semiconductor devices |
US3849344A (en) * | 1972-03-31 | 1974-11-19 | Carborundum Co | Solid diffusion sources containing phosphorus and silicon |
US3852086A (en) * | 1973-06-28 | 1974-12-03 | Carborundum Co | Solid diffusion sources for phosphorus doping |
-
1974
- 1974-08-26 US US05/500,765 patent/US3931056A/en not_active Expired - Lifetime
- 1974-10-10 DE DE2448258A patent/DE2448258C2/de not_active Expired
- 1974-10-11 JP JP49116250A patent/JPS5814738B2/ja not_active Expired
- 1974-10-11 FR FR7434367A patent/FR2282939A1/fr active Granted
-
1975
- 1975-07-30 CA CA232,564A patent/CA1059158A/fr not_active Expired
- 1975-08-22 GB GB34890/75A patent/GB1517382A/en not_active Expired
Non-Patent Citations (1)
Title |
---|
NEANT * |
Also Published As
Publication number | Publication date |
---|---|
DE2448258A1 (de) | 1976-03-11 |
JPS5814738B2 (ja) | 1983-03-22 |
JPS5125512A (fr) | 1976-03-02 |
CA1059158A (fr) | 1979-07-24 |
DE2448258C2 (de) | 1983-12-08 |
US3931056A (en) | 1976-01-06 |
GB1517382A (en) | 1978-07-12 |
FR2282939B1 (fr) | 1978-07-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
TP | Transmission of property | ||
TP | Transmission of property | ||
ST | Notification of lapse |